2SK3674-01SJ [FUJI]
Power MOSFET SuperFAP-G series Target Specification; 功率MOSFET SuperFAP -G系列目标规格
| 型号： | 2SK3674-01SJ |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Power MOSFET SuperFAP-G series Target Specification |
| 文件： | 总4页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Fuji PowerMOSFET SuperFAP-G series Target Specification
2SK3674-01L,S,SJ (900V/2.0Ω/7PAR)ELIMINARY
1) Package
T-PACK L ・・・See Page 2/4
S ・・・See Page 3/4
SJ ・・・See Page 4/4
2) Absolute Maximum Ratings (Tc=25℃ꢀunless otherwise specified)
Symbols
Ratings
900
±7
±28
Items
Units
VDS
ID
ID(pulse)
VGS
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
V
A
A
V
±30
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
IAR
7
A
EAS
269.5
mJ
*1
*2
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
20
5
225
1.67
150
dVDS/dt
dV/dt
kV/us
kV/us
W
W
℃
Peak Diode recovery dV/dt
PDꢀ＠Ｔc=25℃
PD @Ta=25℃
Tch
Maximum Power Dissipation
Operating and Storage
Temperature range
Tstg
-55 ～+150
℃
3)Electrical Characteristics (Tch=25℃ unless otherwise specified)
Items
Symbols
Test Conditions
min.
900
3.0
---
---
---
typ.
---
---
---
---
max. Units
BVDSS
ID=250uA
VGS=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
---
5.0
50
V
VGS(th)
IDSS
ID=250uA
VDS=900V
VGS=0V
VDS=VGS
Tch=25℃
Tch=125℃
VDS=0V
V
µA
µA
nA
Zero Gate Voltage Drain Current
500
100
IGSS
VGS=±30V
Gate-Source Leakage Current
---
R (on)
DS
ID=3.5A
Drain-Source On-State Resistance
VGS=10V
---
---
2.0
Ω
Ciss
Coss
Crss
Qgs
Qgd
IAV
VDS=25V
VGS=0V
f=1MHz
Vcc=450V
ID=7A
VGS=10V
L=10.1mH
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
---
---
---
---
---
---
7
980
120
6
---
---
---
---
---
---
---
pF
28
9
nC
8
---
1.0
Tch=25℃
A
V
VSD
IF=7A,VGS=0V,Tch=25℃
Diode Forward On-Voltage
---
1.5
4) Thermal Characteristics
Items
Symbols
Rth(ch-a)
Test Conditions
min.
typ.
max. Units
Channel to Case
Channel to Ambient
0.56
75.0
℃/W
℃/W
*1 L=10.1mH,Vcc=90V
*2 I -I ,-di/dt=50A/ s,Vcc BV ,Tch 150 C
≤
≤
µ
≤
°
F
D
DSS
NAME
APPROVED
DATE
Sep.-10-'02
Fuji Electric Co.,Ltd.
DRAWN
CHECKED Sep.-10-'02
MT5F12615 1/4
REVISIONS
MA4LE
FUJI POWER MOS FET
See Note: 1.
Trademark
Lot No.
Type name
PRE-SOLDER
1
2
3
CONNECTION
GATE
1
2
3
1
2
3
DRAIN
SOURCE
JEDEC : TO-220AB
Note: 1. Guaranteed mark of avalanche ruggedness.
DIMENSIONS ARE IN MILLIMETERS.
NAME
APPROVED
DATE
Fuji Electric Co.,Ltd.
DRAWN
CHECKED
MT5F12615 2/4
REVISIONS
MA4LE
FUJI POWER MOS FET
OUT VIEW
See Note: 1.
Trademark
4
Fig. 1.
Lot No.
Type name
Fig. 1.
CONNECTION
GATE
DRAIN
SOURCE
1
2
3
4
Solder Plating
Pre-Solder
Notes
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
Note: 1. Guaranteed mark of
avalanche ruggedness.
DIMENSIONS ARE IN MILLIMETERS.
NAME
APPROVED
DATE
Fuji Electric Co.,Ltd.
DRAWN
CHECKED
MT5F12615 3/4
REVISIONS
MA4LE
FUJI POWER MOS FET
OUT VIEW
See Note: 1.
Trademark
Fig. 1.
Lot No.
Type name
Fig. 1.
CONNECTION
1
2
3
GATE
4
DRAIN
SOURCE
Solder Plating
Pre-Solder
Notes
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
Note: 1. Guaranteed mark of
avalanche ruggedness.
DIMENSIONS ARE IN MILLIMETERS.
Fuji Electric Co.,Ltd.
NAME
APPROVED
DATE
DRAWN
CHECKED
MT5F12615 4/4
REVISIONS
MA4LE
相关型号：
©2020 ICPDF网 联系我们和版权申明