2SK3680-01 [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3680-01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3680-01
200309
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Ratings
Unit
Remarks
V
Drain-source voltage
VDS
VDSX
ID
500
500
±52
±208
±30
52
V
A
A
V
A
VGS=-30V
Continuous drain current
Pulsed drain current
Gate-source voltage
Non-Repetitive
ID(puls]
VGS
IAS
Tch=25°C
*1
<
Maximum avalanche current
Repetitive or
Equivalent circuit schematic
A
Tch 150°C
=
IAR
26
*1
Maximum avalanche current
Non-Repetitive
mJ
L=544µH
VCC=50V *2
EAS
802.7
Drain(D)
Maximum avalanche energy
Maximum Drain-Source dV/dt
Peak diode recovery dV/dt
Max. power dissipation
<
kV/s
VDS 500V
dVDS/dt
dV/dt
PD
20
5
=
kV/µs *3
Ta=25°C
Tc=25°C
W
2.50
Gate(G)
600
Source(S)
°C
°C
Operating and storage
temperature range
Tch
+150
-55 to +150
Tstg
*1 See to Avalanche Current Graph
*2 See to Avalanche Energy Graph
<
<
<
*3 IF -ID, -di/dt=50A/µs, VCC BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Test Conditions
Item
Symbol
V(BR)DSS
VGS(th)
µ
ID= 250 A
VGS=0V
Drain-source breakdown voltaget
Gate threshold voltage
500
V
µ
ID= 250 A
VDS=VGS
V
3.0
5.0
25
Tch=25°C
µA
VDS=500V VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
250
100
VDS=400V VGS=0V
VGS=±30V VDS=0V
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
IGSS
RDS(on)
gfs
10
ID=26A VGS=10V
0.09
0.11
Ω
15
30
5350
760
42
S
ID=26A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
8025
1140
63
pF
VGS=0V
Output capacitance
f=1MHz
Reverse transfer capacitance
Turn-on time ton
ns
VCC=300V ID=26A
80
120
155
285
74
103
190
49
VGS=10V
Turn-off time toff
td(off)
tf
RGS=10 Ω
114
36
171
54
VCC=250V
ID=52A
nC
Total Gate Charge
QG
Gate-Source Charge
Gate-Drain Charge
QGS
QGD
IAV
40
60
VGS=10V
µ
52
L=544 H Tch=25°C
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
1.00
0.83
19.0
1.50
IF=52A VGS=0V Tch=25°C
IF=52A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
VSD
µs
µC
trr
Qrr
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.208
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
50.0
°C/W
1
2SK3680-01
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
Allowable Power Dissipation
PD=f(Tc)
150
140
130
120
110
100
90
800
700
600
500
400
300
200
100
0
20V
10V
8V
7.5V
80
70
60
50
40
6.5V
30
20
VGS=6.0V
10
0
0
4
8
12
16
20
24
0
25
50
75
100
125
150
VDS [V]
Tc [°C]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1
100
10
1
0.1
0.1
0.3
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
VGS[V]
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=26A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
0.3
0.2
0.1
0.0
VGS=6V
6.5V
7.5V
0.2
0.1
0.0
8V
10V
20V
max.
typ.
0
20
40
60
80
ID [A]
100
120
140
-50
-25
0
25
50
Tch [°C]
75
100
125
150
2
2SK3680-01
FUJI POWER MOSFET
Typical Gate Charge Characteristics
VGS=f(Qg):ID=52A,Tch=25 °C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
14
12
10
8
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Vcc= 100V
250V
max.
min.
400V
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100 120 140 160 180 200
Qg [nC]
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
105
104
103
102
101
1000
100
10
Ciss
Coss
Crss
1
0.1
100
101
VDS [V]
102
103
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
VSD [V]
Maximum Avalanche Energy vs. starting Tch
I(AV)=f(starting Tch):Vcc=50V
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
103
102
101
100
70
60
50
40
30
20
10
0
td(off)
Non-Repetitive
(Single Pulse)
td(on)
tf
tr
Repetitive
10-1
100
101
102
0
25
50
75
100
125
150
175
200
starting Tch [°C]
ID [A]
3
2SK3680-01
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=52A
2500
2000
1500
1000
500
IAS=21A
IAS=32A
IAS=52A
0
0
25
50
75
100
125
150
starting Tch [°C]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=50V
102
Single Pulse
101
100
10-1
10-2
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maxmum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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