6MBI150UB-120-01 [FUJI]
Insulated Gate Bipolar Transistor;
| 型号： | 6MBI150UB-120-01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总13页 (文件大小：407K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Messrs. Rockwell Automation
Specification
(150A/1200V-6in1 IGBT-Module)
Device Name
:
:
:
IGBT-Module
Type Name
Spec. No.
6MBI150UB-120-01
MS5F05324
Fuji Electric Co.,Ltd.
Matsumoto Factory
DATE
NAME
APPROVAL
T.Fujihira
DRAWN
Nov. 22 '02 S.Yoshiwatari
CHECKED
Nov. 23 '02
Nov. 23 '02
T.Miyasaka
K.Yamada
1
13
MS5F05324
H04-004-007
Revised Records
Classifi -
cation
Applied
Date
Ind.
-
Content
Drawn
-
Checked
Approved
T.Fujihira
date
T.Miyasaka
K.Yamada
Nov. 26
'02
Issued
date
enactment
-
2
13
MS5F05324
H04-004-006
Type Name : 6MBI150UB-120-01 ／ꢀPKG.No. M633
1. Outline Drawing ( Unit : mm )
1
SE CT IO N K-K
shows theoretical dimension.
2. Equivalent circuit
30,31,32
[ Inverter ]
[ Thermistor ]
16,17,18
19
20
1
2
5
6
9
10
U
V
W
21,22,23
27,28,29
24,25,26
3
4
7
8
11
12
33,34,35
13,14,15
3
13
MS5F05324
H04-004-003
3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ）
Maximum
Ratings
Items
Symbols
Conditions
Units
Collector-Emitter voltage
Gate-Emitter voltage
VCES
VGES
1200
±20
V
V
225
150
450
300
Tc=25℃
Ic
Continuous
1ms
Tc=80℃
Tc=25℃
Tc=80℃
Collector current
Icp
A
-Ic
-Ic pluse
Pc
Tj
Tstg
150
300
625
150
Collector Power Dissipation
Junction temperature
Storage temperature
1 device
W
℃
-40～ +125
between terminal and copper base *1
between thermistor and others *2
Isolation
voltage
Viso
-
AC : 1min.
2500
3.5
VAC
Screw
Torque
Mounting *3
N・m
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
max.
VGE = 0V
VCE = 1200V
VCE = 0V
VGE=±20V
VCE = 20V
Ic = 150A
Zero gate voltage
Collector current
ICES
-
-
1.0
mA
nA
V
Gate-Emitter
leakage current
IGES
-
-
200
8.5
Gate-Emitter
threshold voltage
VGE(th)
4.5
6.5
Tj= 25℃
Tj=125℃
Tj= 25℃
Tj=125℃
-
-
-
-
-
-
-
-
-
-
2.25
2.50
1.75
2.00
20
0.36
0.21
0.03
0.54
0.14
2.60
-
-
-
-
1.20
0.60
-
1.00
0.30
VCE(sat)
VGE=15V
Ic = 150A
(terminal)
Collector-Emitter
saturation voltage
V
VCE(sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
Input capacitance
Turn-on time
VCE=10V,VGE=0V,f=1MHz
Vcc = 600V
nF
Ic = 150A
VGE=±15V
Rg = 2.2 Ω
μs
Turn-off time
Tj=125℃
Short-circuit capability
Pw
VCE=800V,VGE=±15V
Rg = 2.2 Ω
10
-
-
μs
Tj= 25℃
Tj=125℃
Tj= 25℃
Tj=125℃
-
-
-
-
-
2.55
2.50
2.05
2.00
-
5000
495
3375
3.05
-
-
VF
VGE=0V
(terminal)
Forward on voltage
V
VF
(chip)
IF = 150A
-
Reverse recovery time
Resistance
ｔｒｒ
IF = 150A
T = 25℃
T =100℃
T = 25/50℃
0.35
-
520
3450
μs
Ω
K
-
R
465
3305
B value
B
4
13
MS5F05324
H04-004-003
5. Thermal resistance characteristics
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
max.
0.20
0.29
-
IGBT
FWD
-
-
-
-
-
Thermal resistance(1device)
Contact Thermal resistance
Rth(j-c)
Rth(c-f)
℃/W
with Thermal Compound (※)
0.05
※ This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module (モジュール表示)
Lot No. for Fuji
Place of manufucturing(code)
SAP No.(FIVE DIGITS) : 01502
Lot No.(FOUR DIGITS)
7.Applicable category (適用範囲)
This specification is applied to Power Integrated Module named 6MBI150UB-120-01 .
本納入仕様書は パワー集積モジュール 6MBI150UB-120-01 に適用する。
8.Storage and transportation notes (保管・運搬上の注意事項)
The module should be stored at a standard temperature of 5 to 35℃ and humidity of 45 to 75% .
常温・常湿保存が望ましい。 ( 5～35℃, 45～75%)
Store modules in a place with few temperature changes in order to avoid condensation on the module surface.
急激な温度変化のなきこと。 (モジュール表面が結露しないこと)
Avoid exposure to corrosive gases and dust.
・
・
・
・
・
・
腐蝕性ガスの発生場所，塵埃の多い場所は避けること。
Avoid excessive external force on the module.
製品に荷重がかからないように 十分注意すること。
Store modules with unprocessed terminals.
モジュールの端子は未加工の状態で保管すること。
Do not drop or otherwise shock the modules when transporting.
製品の運搬時に衝撃を与えたり、落下させたりしないこと。
9. Definitions of switching time (スイッチング時間の定義)
90%
0V
0V
V
GE
t
r r
L
I
r r
V
Ic
CE
90%
90%
Vcc
10%
10%
10%
V
CE
Ic
0V
0A
R
G
V
CE
t
t
f
r ( i )
V
GE
Ic
t
r
t
o f f
t
o n
10. Packing and Labeling
Material : Cardboard
Packing box
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
Display
* Each modules are packed with electrical static protection.
5
13
MS5F05324
H04-004-003
Reliability Test Items
Reference
norms
EIAJ
ED-4701
Test
cate-
gories
Accept-
ance
number
Number
of sample
Test items
Test methods and conditions
1 Terminal Strength Pull force
: 20N
A - 111
Method 1
A - 112
5
5
5
( 1 : 0 )
( 1 : 0 )
( 1 : 0 )
(Pull test)
Test time
: 10±1 sec.
2 Mounting Strength Screw torque
Test time
: 2.5 ~ 3.5 N
･
m (M5)
: 10±1 sec.
Method 2
A - 121
3 Vibration
Range of frequency : 10 ~ 500Hz
Sweeping time
Acceleration
: 15 min.
: 10G
Sweeping direction : Each X,Y,Z axis
Test time : 6 hr. (2hr./direction)
Maximum acceleration : 1000G
4 Shock
A - 122
A - 131
5
5
( 1 : 0 )
( 1 : 0 )
Pulse width
Direction
: 0.5msec.
: Each X,Y,Z axis
: 3 times/direction
Test time
5 Solderabitlity
Solder temp.
Immersion time
Test time
: 235±5
℃
: 5±1sec.
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
6 Resistance to
Soldering Heat
Solder temp.
Immersion time
Test time
: 260±5
℃
A - 132
5
( 1 : 0 )
: 10±1sec.
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
1 High Temperature Storage temp.
Storage Test duration
2 Low Temperature Storage temp.
: 125±5
℃
B - 111
B - 112
B - 121
5
5
5
( 1 : 0 )
( 1 : 0 )
( 1 : 0 )
: 1000hr.
: -40±5
℃
Storage
Test duration
Storage temp.
Relative humidity
Test duration
Test temp.
: 1000hr.
3 Temperature
Humidity
: 85±3
℃
: 85±5%
: 1000hr.
Storage
4 Unsaturated
Pressure Cooker
: 121
B - 123
B - 131
5
5
( 1 : 0 )
( 1 : 0 )
℃
Atmospheric pressure : 2.03×105 Pa
(Reference value)
: 20hr.
Test duration
Test temp.
5 Temperature
Cycle
+3
Low temp. -40 -5
+5
:
℃
℃
High temp. 125 -5
RT 5 ~ 35
℃
Dwell time
: High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
Number of cycles
Test temp.
: 100 cycles
6 Thermal Shock
+0
B - 141
5
( 1 : 0 )
High temp. 100 -5
℃
:
+5
Low temp. 0 -0
Used liquid : Water with ice and bolding water
℃
Dipping time
: 5 min. par each temp.
Transfer time
Number of cycles
: 10 sec.
: 10 cycles
6
13
MS5F05324
H04-004-003
Reliability Test Items
Reference
norms
EIAJ
ED-4701
Test
cate-
gories
Accept-
ance
number
Number
of sample
Test items
Test methods and conditions
1 High temperature
Reverse Bias
+0
-5
D - 313
D - 323
B - 121
D - 322
5
5
5
5
( 1 : 0 )
( 1 : 0 )
( 1 : 0 )
( 1 : 0 )
Test temp.
:
Ta = 125
(Tj
℃
℃
≦
150
)
Bias Voltage
Bias Method
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
Test duration
Test temp.
: 1000hr.
2 High temperature
Bias
+0
-5
:
Ta = 125
(Tj
℃
℃
≦
150
)
Bias Voltage
Bias Method
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
Test duration
: 1000hr.
3 Temperature
Humidity Bias
85 +-3oC
:
:
85 +-5%
Test temp.
Relative humidity
Bias Voltage
Bias Method
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
Test duration
ON time
: 1000hr.
4 Intermitted
Operating Life
(Power cycle)
( for IGBT )
: 2 sec.
OFF time
Test temp.
: 18 sec.
Tj=100±5 deg
∆
Tj
:
≦ ℃ ℃
150 , Ta=25±5
Number of cycles : 15000 cycles
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Unit
mA
Note
Lower limit Upper limit
Electrical
characteristic
Leakage current
ICES
±IGES
VGE(th)
VCE(sat)
VF
-
USL×2
USL×2
-
A
µ
Gate threshold voltage
Saturation voltage
Forward voltage
LSL×0.8
USL×1.2
USL×1.2
USL×1.2
USL×1.2
mA
V
-
-
-
V
Thermal
IGBT
∆
VGE
mV
resistance
or VCE
∆
FWD
VF
-
USL×1.2
mV
-
∆
Isolation voltage
Visual inspection
Peeling
Viso
Broken insulation
Visual
inspection
-
The visual sample
-
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components at room
ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the
wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry
completely before the measurement.
7
13
MS5F05324
H04-004-003
Reliability Test Results
Test
cate-
gories
Reference
norms
EIAJ ED-4701 sample sample
Number Number
of test of failure
Test items
1 Terminal Strength
A - 111
Method 1
A - 112
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
0
0
0
0
0
0
0
0
0
*
(Pull test)
2 Mounting Strength
Method 2
A - 121
3 Vibration
4 Shock
A - 122
A - 131
A - 132
B - 111
B - 112
B - 121
B - 123
B - 131
B - 141
D - 313
D - 323
B - 121
D - 322
5 Solderabitlity
6 Resistance to Soldering Heat
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
Storage
4 Unsaturated
Pressure Cooker
5 Temperature Cycle
*
6 Thermal Shock
0
*
1 High temperature Reverse Bias
2 High temperature Bias
( for gate )
0
*
3 Temperature Humidity Bias
4 Intermitted Operating Life
(Power cycling)
0
( for IGBT )
* : Now under testing
8
13
MS5F05324
H04-004-003
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj= 25℃ / chip
Tj= 125℃ / chip
400
300
200
100
0
400
300
200
100
0
VGE=20V
15V
12V
VGE=20V
15V
12V
10V
8V
10V
8V
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.) / chip
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj=25ﾟC / chip
400
300
200
100
0
10.0
8.0
Tj=25℃
6.0
Tj=125℃
4.0
Ic=300A
2.0
Ic=150A
Ic= 75A
0.0
0.0
1.0
2.0
3.0
4.0
5.0
10.0
15.0
20.0
25.0
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Capacitance vs. Collector-Emiiter voltage (typ.)
Dynamic Gate charge (typ.)
VGE=0V, f= 1MHz, Tj= 25℃
Vcc=600V， Ic=150A，Tj= 25℃
100.0
10.0
1.0
Cies
VGE
VCE
Cres
Coes
0
0.1
0
200
400
600
800
0.0
10.0
20.0
30.0
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
9
13
MS5F05324
H04-004-003
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj= 25℃
Vcc=600V, VGE=±15V, Rg=2.2Ω, Tj=125℃
10000
1000
100
10000
1000
100
toff
ton
toff
ton
tf
tr
tf
tr
10
10
0
50
100
150
200
250
300
0
50
100
150
200
250
300
Collector current : Ic [ A ]
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=150A, VGE=±15V, Tj= 25℃
Vcc=600V, VGE=±15V, Rg=2.2Ω
10000
1000
100
30.0
25.0
20.0
15.0
10.0
5.0
Eoff(125℃)
ton
Eon(125℃)
Eoff(25℃)
toff
tr
Eon(25℃)
tf
Err(125℃)
Err(25℃)
10
0.0
0.1
1.0
10.0
100.0
0
100
200
300
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
Vcc=600V, Ic=150A, VGE=±15V, Tj= 125℃
+VGE=15V,-VGE≦15V, RG≧2.2Ω ,Tj≦125℃
100.0
75.0
50.0
25.0
0.0
1500
1000
500
0
Eon
Eoff
SCSOA
RBSOA
Err
0.1
1.0
10.0
100.0
0
250
500
750
1000
1250
Gate resistance : Rg [ Ω ]
Collector - Emitter voltage : VCE [ V ]
10
13
MS5F05324
H04-004-003
Forward current vs. Forward on voltage (typ.)
chip
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=2.2Ω
400
300
200
100
0
1000
100
10
Tj=25℃
Tj=125℃
trr (125℃)
Irr (125℃)
Irr (25℃)
trr (25℃)
0
100
200
300
0.00
1.00
2.00
3.00
4.00
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Transient thermal resistance
1.000
0.100
0.010
0.001
FWD
IGBT
0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
11
13
MS5F05324
H04-004-003
Warnings
-
-
-
This product shall be used within its abusolute maximun rating (voltage, current, and temperature).
This product may be broken in case of using beyond the ratings.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。
絶対最大定格を超えて使用すると、素子が破壊する場合があります。
Conect adequate fuse or protector of circuit between three-phase line and
this product to prevent the equipment from causing secondary destruction.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ
又はブレーカーを必ず付けて２次破壊を防いでください。
Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。
製品の信頼性寿命を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
-
-
-
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観などの保証は
致しかねます。
Never add mechanical stress to deform the main or control terminal.
The deformed terminal may cause poor contact probrem.
主端子及び制御端子に応力を与えて変形させないで下さい。ꢀ端子の変形により、接触不良などを引き起こす場合
があります。
Use this product with keeping the cooling fin's flatness between screw holes within 100um and the
rouphness within 10um. Also keep the tightening torque within the limits of this specification.
Improper handling may cause isolation breakdown and this may lead to a cirtical accident.
100um
冷却フィンはネジ取り付け位置間で平坦度を 以下、表面の粗さは
いをすると絶縁破壊を起こし、重大事故に発展する場合があります。
10um
以下にして下さい。ꢀ誤った取り扱
It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
-
-
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。
RBSOAの範囲を超えて使用すると素子が破壊する可能性があります。
If excessive static electricity is applied to the control terminals, the devices can be broken.
Implement some countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。
取り扱い時は静電気対策を実施して下さい。
12
13
MS5F05324
H04-004-003
Cautions
-
Fuji Electric is constantly making every endeavor to improve the product quality and reliability. However,
ꢀ
semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design,
spread-fire-preventive design, and malfunction-protective design.
富士電機は耐えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計
など安全確保のための手段を講じて下さい。
-
-
The application examples described in this specification only explain typical ones that used the Fuji Electric
products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機製品を使用した代表的な応用例を説明するものであり、本仕様書
によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine ralaying equipment or systems, please apply after confirmation
ꢀ
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Co.,Ltd.
13
13
MS5F05324
H04-004-003
相关型号：
6MBI15S-1200L
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M624, 17 PIN
FUJI
©2020 ICPDF网 联系我们和版权申明