6MBI15S-120 [FUJI]
IGBT MODULE ( S series)1200V / 15A; IGBT模块（S系列） 1200V / 15A
| 型号： | 6MBI15S-120 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT MODULE ( S series)1200V / 15A |
| 文件： | 总4页 (文件大小：544K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT Modules
6MBI15S-120
IGBT MODULE ( S series)
1200V / 15A 6 in one-package
Features
· Compact package
· P.C.board mount
· Low VCE(sat)
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as welding machines
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Symbol
VCES
VGES
IC
Unit
V
Rating
Collector-Emitter voltage
Gate-Emitter voltage
Collector Continuous Tc=25°C
Equivalent Circuit Schematic
1200
V
±20
13(P)
A
25
current
Tc=80°C
15
1(Gu)
2(Eu)
5(Gv)
9(Gw)
1ms
Tc=25°C IC pulse
Tc=80°C
A
50
30
6(Ev)
10(Ew)
-IC
A
15
16(U)
15(V)
14(W)
1ms
-IC pulse
A
30
110
3(Gx)
4(Ex)
7(Gy)
8(Ey)
11(Gz)
12(Ez)
Max. power dissipation (1 device)
Operating temperature
Storage temperature
Isolation voltage
PC
W
°C
°C
V
Tj
+150
Tstg
-40 to +125
AC 2500 (1min.)
3.5
17(N)
Vis
Screw torque
Mounting *1
N·m
*1 : Recommendable value : 2.5 to 3.5 N·m (M5)
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
1.0
0.2
8.5
2.6
–
ICES
–
–
–
–
Zero gate voltage collector current
Gate-Emitter leakage current
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=15mA
mA
µA
V
IGES
VGE(th)
VCE(sat)
5.5
7.2
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
–
–
–
–
–
–
–
–
–
–
–
–
–
2.3
2.8
Tj=25°C VGE=15V, IC=15A
Tj=125°C
V
Cies
Coes
Cres
ton
tr
1800
375
330
0.35
0.25
0.1
–
Input capacitance
VGE=0V
pF
µs
–
Output capacitance
Reverse transfer capacitance
Turn-on time
VCE=10V
–
f=1MHz
1.2
0.6
–
VCC=600V
IC=15A
tr(i)
toff
tf
VGE=±15V
RG=82 ohm
0.45
0.08
2.5
1.0
0.3
3.3
–
Turn-off time
VF
Diode forward on voltage
Reverse recovery time
Tj=25°C
Tj=125°C
IF=15A
IF=15A, VGE=0V
V
2.0
trr
–
0.35
µs
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
1.14
Rth(j-c)
Rth(j-c)
Rth(c-f)*2
IGBT
FWD
–
–
–
–
–
°C/W
°C/W
°C/W
Thermal resistance
1.85
–
the base to cooling fin
0.05
*2 : This is the value which is defined mounting on the additional cooling fin with thermal compound
IGBT Modules
6MBI15S-120
Characteristics
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
Tj= 25 oC (typ.)
35
30
25
20
15
10
5
35
30
25
20
15
10
5
12V
12V
15V
VGE= 20V
15V
VGE= 20V
10V
10V
8V
8V
0
0
0
0
0
1
2
3
:
4
5
0
5
0
1
2
3
:
4
5
Collector - Emitter voltage
VCE [ V ]
Collector - Emitter voltage
VCE [ V ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
35
30
25
20
15
10
5
10
8
Tj= 25o
C
Tj= 125 o
C
6
4
Ic= 30A
Ic= 15A
Ic= 7.5A
2
0
0
1
2
3
4
5
10
15
20
25
Collector - Emitter voltage
:
VCE [ V ]
Gate - Emitter voltage
:
VGE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
Dynamic Gate charge (typ.)
Vcc=600V, Ic=15A, Tj= 25 oC
5000
1000
800
600
400
200
0
25
20
15
10
5
Cies
1000
500
Coes
Cres
100
50
0
5
10
15
20
25
30
35
50 100
Gate charge : Qg [ nC ]
150
Collector - Emitter voltage
:
VCE [ V ]
IGBT Modules
6MBI15S-120
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=82Ω,Tj=25oC
Switching time vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=82Ω,Tj=125oC
1000
500
1000
500
toff
toff
ton
ton
tr
tr
tf
100
50
100
50
tf
0
5
10
15
20
25
0
0
0
5
10
15
20
25
Collector current
:
Ic [ A ]
Collector current
:
Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V,Ic=15A,VGE=±15V,Tj=25oC
Switching loss vs. Collector current (typ.)
Vcc=600V,VGE=±15V, Rg=82Ω
5000
5
4
3
2
1
0
Eon(125 oC)
1000
500
Eon(25 oC)
toff
ton
Eoff(125 oC)
Eoff(25 oC)
Err(125 oC)
tr
tf
100
50
Err(25 oC)
25
30
100
1000
5
10 20
15
30
Gate resistance
:
Rg
[
Ω ]
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
+VGE=15V, -VGE<15V, Rg>82Ω,Tj<125oC
Vcc=600V,Ic=15A,VGE=±15V,Tj=125oC
=
=
=
12
10
8
40
30
20
10
0
Eon
6
4
Eoff
2
Err
0
30
100
1000
200
400 1000
600
800
1200
1400
Gate resistance
:
Rg
[
Ω
]
Collector - Emitter voltage : VCE [ V ]
6MBI15S-120
IGBT Modules
Reverse recovery characteristics (typ.)
Forward current vs. Forward on voltage (typ.)
Vcc=600V,VGE=±15V, Rg=82Ω
35
30
25
20
15
10
5
300
Tj=25 o
C
Tj=125 o
C
trr(125 oC)
trr(25 oC)
100
50
Irr(125 oC)
Irr(25 oC)
10
5
0
0
1
2
3
4
0
10
20
Forward current
: IF [ A ]
Forward on voltage
: VF [ V ]
Transient thermal resistance
5
FWD
IGBT
1
0.5
0.1
0.05
0.001
0.01
Pulse width
0.1
1
:
Pw [ sec ]
Outline Drawings, mm
107.5±1
93±0.3
4-ø6.1±0.3
2-ø5.5±0.3
16.02
15.24
15.24
15.24
15.24
17
13
ø2.5±0.1
69.6±0.3
93±0.3
ø2.1±0.1
A
A
Section A-A
ø0.4
1
12
3.81
16.02 11.43 11.43 11.43 11.43 11.43
1.15±0.2
Shows theory dimensions
相关型号：
6MBI15S-1200L
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M624, 17 PIN
FUJI
©2020 ICPDF网 联系我们和版权申明