概述
规格参数
数据手册
替代型号6MBI180VB-120-50 概述
IGBT MODULE IGBT模块 IGBT
6MBI180VB-120-50 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | FLANGE MOUNT, R-XUFM-X21 | 针数： | 35 |
| Reach Compliance Code： | unknown | 风险等级： | 5.71 |
| Is Samacsys： | N | 外壳连接： | ISOLATED |
| 最大集电极电流 (IC)： | 150 A | 集电极-发射极最大电压： | 1200 V |
| 配置： | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | 门极-发射极最大电压： | 20 V |
| JESD-30 代码： | R-XUFM-X21 | 元件数量： | 6 |
| 端子数量： | 21 | 最高工作温度： | 125 °C |
| 封装主体材料： | UNSPECIFIED | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 极性/信道类型： | N-CHANNEL |
| 最大功率耗散 (Abs)： | 835 W | 认证状态： | Not Qualified |
| 子类别： | Insulated Gate BIP Transistors | 表面贴装： | NO |
| 端子形式： | UNSPECIFIED | 端子位置： | UPPER |
| 晶体管应用： | POWER CONTROL | 晶体管元件材料： | SILICON |
| 标称断开时间 (toff)： | 530 ns | 标称接通时间 (ton)： | 390 ns |
| VCEsat-Max： | 2.3 V | Base Number Matches： | 1 |
6MBI180VB-120-50 数据手册
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PDF下载6MBI180VB-120-50
IGBT MODULE (V series)
IGBT Modules
1200V / 180A / 6 in one package
Features
Compact Package
P.C.Board Mount
Low VCE (sat)
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Maximum
ratings
Items
Symbols
Conditions
Units
Collector-Emitter voltage
V
CES
GES
1200
±20
150
400
150
400
835
175
V
V
Gate-Emitter voltage
Collector current
V
Ic
Continuous
1ms
Tc=80°C
Tc=80°C
Icp
A
-Ic
-Ic pulse
1ms
Collector power dissipation
Junction temperature
Pc
Tj
1 device
W
Operating junciton temperature
(under switching conditions)
Tjop
150
°C
Case temperature
Tc
125
Storage temperature
Tstg
-40 to +125
between terminal and copper base (*1)
between thermistor and others (*2)
Isolation voltage
Screw torque
V
iso
AC : 1min.
M5
2500
3.5
VAC
N m
Mounting (*3)
-
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 2.5-3.5 Nm (M5)
1
6MBI180VB-120-50
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
-
max.
1.0
200
7.0
3.30
-
Zero gate voltage collector current
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1200V
-
mA
nA
V
Gate-Emitter leakage current
Gate-Emitter threshold voltage
GE = 0V, VGE = ±20V
-
-
VGE (th)
CE = 20V, I
C
= 200mA
6.0
6.5
Tj=25°C
-
2.85
3.20
3.25
1.85
2.20
2.25
16.5
0.39
0.09
0.03
0.53
0.06
2.70
2.85
2.80
1.70
1.85
1.80
-
VCE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
Tj=25°C
-
(terminal)
I
C
= 200A
-
-
Collector-Emitter saturation voltage
V
-
2.30
-
VCE (sat)
VGE = 15V
Tj=125°C
Tj=150°C
-
(chip)
I
C
= 200A
-
-
Input capacitance
Turn-on time
Cies
ton
tr
VCE = 10V, VGE = 0V, f = 1MHz
-
-
nF
µs
-
1.20
0.60
-
VCC = 600V
-
I
C
= 200A
tr (i)
toff
tf
-
VGE = +15 / -15V
-
1.00
0.30
3.15
-
RG = 1.2Ω
Turn-off time
-
Tj=25°C
-
VF
I
F
= 200A
Tj=125°C
Tj=150°C
Tj=25°C
-
(terminal)
-
-
Forward on voltage
V
-
2.15
-
VF
(chip)
I
I
F
F
= 200A
= ±20
Tj=125°C
Tj=150°C
-
-
-
-
Reverse recovery time
Resistance
trr
R
B
0.1
-
µs
Ω
K
T = 25°C
-
5000
495
3375
T = 100°C
T = 25 / 50°C
465
3305
520
3450
B value
Thermal resistance characteristics
Characteristics
Items
Symbols Conditions
Units
min.
typ.
max.
Inverter IGBT
Rth(j-c)
-
-
-
-
-
0.18
0.29
-
Thermal resistance (1device)
Inverter FWD
°C/W
Contact thermal resistance (1device) (*4)
Rth(c-f)
with Thermal Compound
0.05
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
Equivalent Circuit Schematic
[ Inverter ]
[ Thermistor ]
16,17,18
30,31,32
19
20
1
2
5
6
9
10
U
V
W
27,28,29
24,25,26
11
12
21,22,23
3
4
7
8
33,34,35
13,14,15
2
6MBI180VB-120-50
IGBT Modules
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
400
400
VGE=20V
VGE=20V
12V
15V
12V
300
200
100
0
300
15V
200
10V
8V
10V
100
8V
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
Collector-Emitter voltage: VCE[V]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
o
Tj= 25 C / chip
400
8
6
Tj=25°C 125°C
150°C
300
200
100
0
4
Ic=400A
Ic=200A
Ic= 100A
2
0
0
1
2
3
4
5
5
10
15
20
25
Gate - Emitter voltage: VGE [V]
Collector-Emitter voltage: VCE[V]
[ Inverter ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
Dynamic gate charge (typ.)
Vcc=600V, Ic=200A, Tj= 25°C
100.0
10.0
1.0
Cies
VGE
Cres
Coes
VCE
0.1
0
250 500 750 1000 1250 1500 1750 2000
Gate charge: Qg [nC]
0
10
20
30
40
Collector - Emitter voltage: VCE [V]
3
6MBI180VB-120-50
IGBT Modules
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.2Ω, Tj= 125°C
Vcc=600V, VGE=±15V, Rg=1.2Ω, Tj= 150°C
10000
1000
100
10000
1000
100
10
toff
toff
ton
tr
ton
tr
tf
tf
10
0
100
200
300
400
500
0
100
200
300
400
500
Collector current: IC [A]
Collector current: IC [A]
[ Inverter ]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=1.2Ω
10000
1000
100
50
40
30
20
10
0
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
toff
ton
Err(150°C)
Err(125°C)
tr
tf
10
0.1
1.0
10.0
0
100
200
300
400
500
Gate resistance : Rg [Ω]
Collector current: IC [A]
[ Inverter ]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 1.2Ω ,Tj <= 125°C
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V
50
500
400
300
200
100
0
40
30
20
10
0
RBSOA
(Repetitive pulse)
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
Err(150°C)
Err(125°C)
0
200 400 600 800 1000 1200 1400 1600
Collector-Emitter voltage : VCE [V]
0
1
10
100
Gate resistance : Rg [Ω]
4
6MBI180VB-120-50
IGBT Modules
[ Inverter ]
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=1.2Ω
1000
100
10
400
300
200
100
0
Tj=25°C
Irr(150°C)
Irr(125°C)
Tj=150°C
trr(150°C)
trr(125°C)
Tj=125°C
0
1
2
3
4
0
100
200
300
400
500
600
Forward on voltage : VF [V]
Forward current : IF [A]
[ Thermistor ]
Transient thermal resistance (max.)
Temperature characteristic (typ.)
1.00
0.10
0.01
100
FWD[Inverter]
IGBT[Inverter]
10
1
0.1
0.001
0.010
0.100
1.000
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
Temperature [°C ]
Pulse width : Pw [sec]
Outline Drawings, mm
5
6MBI180VB-120-50
IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• Machine tools
• OA equipment
• Audiovisual equipment
• Communications equipment (terminal devices)
• Electrical home appliances • Personal equipment
• Measurement equipment
• Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Traffic-signal control equipment
• Trunk communications equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Medical equipment
• Safety devices
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
6
6MBI180VB-120-50 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| 6MBI150VB-060-50 | FUJI | IGBT MODULE | 功能相似 |
|
| 6MBI100VB-120-50 | FUJI | IGBT MODULE (V series) 1200V / 100A / 6 in one package | 功能相似 |
|
| 6MBI150VB-120-50 | FUJI | IGBT MODULE | 功能相似 |
|
6MBI180VB-120-50 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 6MBI180VB-120-55 | FUJI | IGBT MODULE (V series) 1200V / 180A / 6 in one package | 获取价格 |
|
| 6MBI180VX-120-50 | FUJI | IGBT MODULE | 获取价格 |
|
| 6MBI180VX-120-55 | FUJI | IGBT MODULE (V series) 1200V / 180A / 6 in one package | 获取价格 |
|
| 6MBI20-060 | FUJI | Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES | 获取价格 |
|
| 6MBI200F-060 | FUJI | Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel | 获取价格 |
|
| 6MBI200FB-060 | FUJI | IGBT MODULE | 获取价格 |
|
| 6MBI200XBA120-50 | FUJI | 6-Pack(6 in 1) M668 | 获取价格 |
|
| 6MBI200XBE120-50 | FUJI | 6-Pack(6 in 1) M668 | 获取价格 |
|
| 6MBI200XXA120-50 | FUJI | 6-Pack(6 in 1) M648 | 获取价格 |
|
| 6MBI200XXE120-50 | FUJI | 6-Pack(6 in 1) M648 | 获取价格 |
|
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