6MBI35U4A-120-50 [FUJI]
IGBT Module; IGBT模块
| 型号： | 6MBI35U4A-120-50 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT Module |
| 文件： | 总14页 (文件大小：538K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPECIFICATION
IGBTModule
Device Name :
(RoHS compliant product)
6MBI35U4A-120-50
Type Name
:
MS5F06818
Spec. No. :
S.Ogawa
Feb. 23 ’07
a
T.Miyasaka
Feb. 23 ’07 S.Igarashi
1
MS5F06818
14
K.Yamada
R e v i s e d R e c o r d s
Classi-
fication
Applied
date
Date
Ind.
Content
Drawn Checked Checked Approved
Issued
date
Feb -23-’07 Enactment
May.-15-’07 Revision
S.Igarashi K.Yamada T.Miyasaka
Revised Electrical characteristics.
(P4/14)
a
H.Endo
S.Igarashi K.Yamada T.Miyasaka
a
2
MS5F06818
14
6MBI35U4A-120-50(RoHScompliant product)
1. Outline Drawing ( Unit : mm )
2. Equivalent circuit
[ Thermistor ]
[ Inverter ]
15,16
25,26
17
18
1
2
5
9
6
10
U
V
W
23,24
21,22
19,20
3
4
7
8
11
12
27,28
13,14
a
3
MS5F06818
14
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified )
Maximum
Ratings
Items
Symbols
Conditions
Units
Collector-Emitter voltage
VCES
VGES
1200
V
V
Gate-Emitter voltage
Collector current
±20
50
Tc=25°C
Ic
Continuous
1ms
35
100
Tc=80°C
Tc=25°C
Tc=80°C
Icp
A
70
-Ic
-Ic pulse
Pc
35
1ms
70
Collector Power Dissipation
Junction temperature
1 device
205
W
Tj
150
°C
Storage temperature
Tstg
-40 ~ +125
between terminal and copper base (*1)
Isolation
voltage
Viso
-
AC : 1min.
2500
3.5
VAC
N m
between thermistor and others (*2)
Screw
Torque
Mounting (*3)
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
max.
1.0
VGE = 0V
Zero gate voltage
Collector current
ICES
-
-
mA
nA
V
VCE = 1200V
VCE = 0V
Gate-Emitter
leakage current
IGES
-
-
200
7.1
VGE=±20V
VCE = 20V
Ic = 35mA
a
Gate-Emitter
threshold voltage
VGE(th)
5.5
6.5
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
-
2.05
2.25
1.90
2.10
2.65
0.32
0.18
0.03
0.39
0.14
1.75
1.85
1.60
1.70
-
2.20
-
VCE(sat)
(terminal)
VGE=15V
Ic = 35A
-
Collector-Emitter
saturation voltage
V
-
2.05
-
VCE(sat)
(chip)
-
Input capacitance
Turn-on time
Cies
ton
tr
VCE=10V,VGE=0V,f=1MHz
Vcc = 600V
-
-
nF
-
1.20
0.60
-
Ic = 35A
-
tr (i)
toff
tf
VGE=±15V
-
μs
Rg = 33 Ω
-
1.00
0.30
2.05
-
Turn-off time
-
Tj= 25°C
VGE=0V
-
VF
(terminal)
Tj=125°C
-
Forward on voltage
V
Tj= 25°C
IF = 35A
-
1.85
-
VF
(chip)
Tj=125°C
-
-
Reverse recovery time
Resistance
trr
IF = 35A
0.35
-
μs
Ω
K
T = 25°C
-
5000
495
R
T =100°C
T = 25/50°C
465
3305
520
3450
B value
B
3375
a
4
MS5F06818
14
5. Thermal resistance characteristics
Characteristics
Items
Symbols
Conditions
Inverter IGBT
Units
°C/W
min.
-
-
typ.
-
-
max.
0.60
0.88
Thermal resistance(1device)
Rth(j-c)
Rth(c-f)
Inverter FWD
Contact Thermal resistance
(1device) (*4)
with Thermal Compound
-
0.05
-
(*4) This is the value which is defined mounting on the additional cooling fin with thermal compound.
6. Indication on module
Display on the module label
- Logo of production
- Type neme: 6MBI35U4A-120-50
- IC, VCES rating: 35A 1200V
- Lot No (5 digits)
- Place of manufacturing (code)
- Bar code
7. Applicable category
This specification is applied to Power Integrated Module named 6MBI35U4A-120-50.
8. Storage and transportation notes
The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% .
•
Be careful to solderability of the terminals if the module has passed over one
year from manufacturing date, under the above storage condition.
Store modules in a place with few temperature changes in order to avoid condensation on the
module surface.
•
Avoid exposure to corrosive gases and dust.
•
•
•
•
Avoid excessive external force on the module.
Store modules with unprocessed terminals.
Do not drop or otherwise shock the modules when transporting.
9. Definitions of switching time
90%
0V
0V
V
GE
t
rr
L
I
rr
V
Ic
CE
90%
90%
Vcc
10%
10%
10%
V
CE
Ic
0V
0A
R
G
V
CE
t
r(i)
t
f
V
GE
t
r
Ic
t
off
t
on
10. Packing and Labeling
Display on the packing box
- Logo of production
- Type name
- Lot No
- Products quantity in a packing box
a
5
MS5F06818
14
11. List of materials
(Total weight of soldering material(typ.): 4.4g)
No.
1
Parts
Material (main)
Cu Ni plating
Ref.
Base Plate
Ni plating (Internal)
Lead free solder plating (External)
UL 94V-0
2
Terminal
Cu
3
4
5
6
7
8
9
Cover
Case
Isolation substrate
IGBT chip
Wiring
PPS resin
PPS resin
Al2O3 + Cu
Silicon
UL 94V-0
Aluminum
Silicone Gel
Adhesive
Silicone resin
Silicone resin
Sn/Ag base
10 Solder(Under chip)
Solder
11
(Not drawn in above)
(Not drawn in above)
(Not drawn in above)
Sn/Ag base
(Under Isolation substrate )
12 Label
Paper
Silicon
Fe
13 FWD chip
14 Ring
15 Thermistor
Trivalent Chromate treatment
Lead glass
12. RoHS Directive Compliance
本IGBTモジュールは富士電機デバイステクロノジーが発行しているRoHSに関する資料MS5F6209
を適用する。日本語版（MS5F6212）は参考資料にする。
The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to
this IGBT Module. The Japanese Edition (MS5F6212) is made into a reference grade.
a
6
MS5F06818
14
13. Reliability test results
Reliability Test Items
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Test
cate-
gories
Number Accept-
of ance
sample number
Test items
Test methods and conditions
Test Method 401
1 Terminal Strength
(Pull test)
Pull force
Test time
: 20N
5
5
( 0 : 1 )
( 0 : 1 )
Ⅰ
Method
: 10±1 sec.
: 2.5 ~ 3.5 N･m (M5)
: 10±1 sec.
Test Method 402
2 Mounting Strength Screw torque
Test time
Ⅱ
method
Test Method 403
Reference 1
3 Vibration
Range of frequency : 10 ~ 500Hz
5
( 0 : 1 )
Sweeping time
Acceleration
: 15 min.
100m/s2
Condition code B
:
Sweeping direction : Each X,Y,Z axis
Test time
: 6 hr. (2hr./direction)
5000m/s2
Test Method 404
Condition code B
4 Shock
Maximum acceleration :
5
5
( 0 : 1 )
( 0 : 1 )
Pulse width
Direction
: 1.0msec.
: Each X,Y,Z axis
: 3 times/direction
: 245±5 ℃
Test time
5 Solderabitlity
Solder temp.
Immersion time
Test time
Test Method 303
Condition code A
: 5±0.5sec.
: 1 time
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
6 Resistance to
Soldering Heat
Solder temp.
Immersion time
Test time
: 260±5 ℃
: 10±1sec.
: 1 time
Test Method 302
Condition code A
5
( 0 : 1 )
Each terminal should be Immersed in solder
within 1~1.5mm from the body.
Test Method 201
Test Method 202
℃
1 High Temperature
Storage
Storage temp.
Test duration
Storage temp.
Test duration
Storage temp.
Relative humidity
Test duration
Test temp.
: 125±5
5
5
5
( 0 : 1 )
( 0 : 1 )
( 0 : 1 )
: 1000hr.
℃
2 Low Temperature
Storage
: -40±5
: 1000hr.
℃
: 85±2
Test Method 103
Test code C
3 Temperature
Humidity
: 85±5%
: 1000hr.
Storage
Test Method 103
Test code E
±
℃
4 Unsaturated
: 120
2
5
5
( 0 : 1 )
( 0 : 1 )
Pressurized Vapor Test humidity
Test duration
: 85±5%
: 96hr.
Test Method 105
5 Temperature
Cycle
Test temp.
:
Low temp. -40±5 ℃
High temp. 125 ±5 ℃
℃
RT 5 ~ 35
Dwell time
: High ~ RT ~ Low ~ RT
1hr. 0.5hr. 1hr. 0.5hr.
: 100 cycles
Number of cycles
Test temp.
Test Method 307
6 Thermal Shock
+0
5
( 0 : 1 )
High temp. 100 -5
Ⅰ
method
Condition code A
:
℃
+5
Low temp. 0 -0
℃
Used liquid : Water with ice and boiling water
Dipping time
: 5 min. par each temp.
: 10 sec.
Transfer time
Number of cycles
: 10 cycles
a
7
MS5F06818
14
Reliability Test Items
Reference
norms
EIAJ ED-4701
(Aug.-2001 edition)
Test
cate-
gories
Number Accept-
of ance
sample number
Test items
Test methods and conditions
Test Method 101
1 High temperature
Reverse Bias
5
( 0 : 1 )
± ℃
: Ta = 125 5
Test temp.
(Tj ≦ 150 ℃)
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
Bias Voltage
Bias Method
Test duration
Test temp.
: 1000hr.
Test Method 101
2 High temperature
Bias (for gate)
5
( 0 : 1 )
: Ta = 125±5 ℃
≦
℃
)
(Tj
150
Bias Voltage
Bias Method
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
Test duration
: 1000hr.
Test Method 102
Condition code C
3 Temperature
Humidity Bias
5
5
( 0 : 1 )
85±2 oC
Test temp.
:
Relative humidity
Bias Voltage
Bias Method
:
85±5%
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
: 2 sec.
Test duration
ON time
OFF time
Test Method 106
4 Intermitted
Operating Life
(Power cycle)
( for IGBT )
( 0 : 1 )
: 18 sec.
:
ꢀ
Test temp.
Tj=100±5 deg
≦
℃ ℃
150 , Ta=25±5
Tj
Number of cycles
: 15000 cycles
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Unit
mA
Note
Lower limit Upper limit
Electrical
Leakage current
ICES
-
-
USL×2
USL×2
ꢁ
A
characteristic
±IGES
Gate threshold voltage VGE(th) LSL×0.8 USL×1.2 mA
Saturation voltage
Forward voltage
VCE(sat)
VF
-
-
-
USL×1.2
USL×1.2
V
V
ꢀ
Thermal
IGBT
VGE
USL×1.2 mV
resistance
or ꢀ VCE
ꢀ VF
FWD
-
USL×1.2 mV
Isolation voltage
Visual inspection
Peeling
Viso
Broken insulation
-
-
Visual
inspection
-
The visual sample
Plating
and the others
LSL : Lower specified limit.
USL : Upper specified limit.
Note :
Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
a
8
MS5F06818
14
Reliability Test Results
Reference
norms
EIAJ ED-4701
Test
cate-
gories
Number Number
of test of failure
sample sample
Test items
(Aug.-2001 edition)
Test Method 401
1 Terminal Strength
(Pull test)
5
5
5
5
5
5
5
5
5
5
5
5
0
0
0
0
0
0
0
0
0
0
0
0
Method
Ⅰ
Test Method 402
method
2 Mounting Strength
Ⅱ
Test Method 403
3 Vibration
Condition code B
Test Method 404
4 Shock
Condition code B
Test Method 303
Condition code A
Test Method 302
5 Solderabitlity
6 Resistance to Soldering Heat
1 High Temperature Storage
2 Low Temperature Storage
Condition code A
Test Method 201
Test Method 202
Test Method 103
Test code C
3 Temperature Humidity
Storage
Test Method 103
Test code E
4 Unsaturated
Pressurized Vapor
Test Method 105
5 Temperature Cycle
6 Thermal Shock
Test Method 307
method
Ⅰ
Condition code A
Test Method 101
1 High temperature Reverse Bias
5
5
5
5
0
0
0
0
Test Method 101
2 High temperature Bias
( for gate )
Test Method 102
Condition code C
Test Method 106
3 Temperature Humidity Bias
4 Intermitted Operating Life
(Power cycling)
( for IGBT )
a
9
MS5F06818
14
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
80
60
40
20
0
80
60
40
20
0
VGE=20V 15V
12V
15V
12V
VGE=20V
10V
10V
8V
8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
80
60
40
20
0
10
Tj=25°C
Tj=125°C
8
6
4
2
0
Ic=70A
Ic=35A
Ic=17.5A
0
1
2
3
4
5
5
10
15
20
25
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
[ Inverter ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Dynamic Gate charge (typ.)
Vcc=600V， Ic=35A，Tj= 25°C
10.0
Cies
VGE
1.0
Cres
Coes
VCE
0
0.1
0
50
100
150
200
a
0
10
20
30
Gate charge : Qg [nC]
Collector-Emitter voltage : VCE [V]
10
MS5F06818
14
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=33Ω, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=33Ω, Tj=125°C
10000
1000
100
10000
1000
100
toff
tf
toff
ton
tr
ton
tr
tf
10
10
0
20
40
60
0
20
40
60
Collector current : Ic [A]
Collector current : Ic [A]
[ Inverter ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=35A, VGE=±15V, Tj= 25°C
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=33Ω
10000
1000
100
6
5
4
3
2
1
ton
toff
Eon(125°C)
Eoff(125°C)
Err(125°C)
Eon(25°C)
tr
tf
Eoff(25°C)
Err(25°C)
10
0
0
10.0
100.0
1000.0
10
20
30
40
50
60
70
Gate resistance : Rg [Ω]
Collector current : Ic [A]
[ Inverter ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 33Ω ,Tj <= 125°C
Vcc=600V, Ic=35A, VGE=±15V, Tj= 125°C
15
10
5
80
60
40
20
0
Eon
Eoff
Err
0
10.0
100.0
1000.0
0
400
800
1200
Gate resistance : Rg [Ω]
Collector-Emitter voltage : VCE [V]
a
11
MS5F06818
14
[ Inverter ]
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
chip
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=33Ω
80
60
40
20
0
1000
100
10
Tj=25°C
Tj=125°C
trr (125°C)
trr (25°C)
Irr (125°C)
Irr (25°C)
0
1
2
3
0
10
20
30
40
50
60
Forward on voltage : VF [V]
Forward current : IF [A]
Transient thermal resistance (max.)
10.000
1.000
0.100
0.010
FWD[Inverter]
IGBT[Inverter]
0.001
0.010
0.100
1.000
Pulse width : Pw [sec]
[ Thermistor ]
Temperature characteristic (typ.)
100
10
1
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
Temperature [°C ]
a
12
MS5F06818
14
Warnings
- This product shall be used within its absolute maximum rating (voltage, current, and temperature).ꢀThis product
may be broken in case of using beyond the ratings. If Printed Circuit Board is not suitable, the main pin terminals
may have higher temperature than Tstg. Also the pin terminals shall be used within Tstg.
製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する
場合があります。また、使用するプリント板が不適切な場合、主端子ピンの温度がTstg以上になることがあります。主端子ピン
もTstg範囲内でご使用下さい。
- Connect adequate fuse or protector of circuit between three-phase line and this product to prevent the equipment
from causing secondary destruction, such as fire, its spreading, or explosion.
万一の不慮の事故で素子が破壊した場合を考慮し、商用電源と本製品の間に適切な容量のヒューズ又はブレーカーを必ず
付けて火災，爆発，延焼等の２次破壊を防いでください。
Use this product after realizing enough working on environment and considering of product's reliability life.
This product may be broken before target life of the system in case of using beyond the product's reliability life.
製品の使用環境を十分に把握し、製品の信頼性寿命が満足できるか検討の上、本製品を適用して下さい。製品の信頼性寿命
を超えて使用した場合、装置の目標寿命より前に素子が破壊する場合があります。
-
If the product had been used in the environment with acid, organic matter, and corrosive gas ( hydrogen sulfide,
sulfurous acid gas), the product's performance and appearance can not be ensured easily.
酸・有機物・腐食性ガス（硫化水素，亜硫酸ガス等）を含む環境下で使用された場合、製品機能・外観等の保証はできません。
-
-
Use this product within the power cycle curve (Technical Rep.No. : MT5F12959). Power cycle capability is
classified to delta-Tj mode which is stated as above and delta-Tc mode. Delta-Tc mode is due to rise and down
of case temperature (Tc), and depends on cooling design of equipment which use this product. In application
which has such frequent rise and down of Tc, well consideration of product life time is necessary.
本製品は、パワーサイクル寿命カーブ以下で使用下さい(技術資料No.: MT5F12959)。パワーサイクル耐量にはこのΔTjによる
場合の他に、ΔTcによる場合があります。これはケース温度(Tc)の上昇下降による熱ストレスであり、本製品をご使用する際
の放熱設計に依存します。ケース温度の上昇下降が頻繁に起こる場合は、製品寿命に十分留意してご使用下さい。
Never add mechanical stress to deform the main or control terminal. The deformed terminal may cause poor
contact problem.
主端子及び制御端子に応力を与えて変形させないで下さい。ꢀ端子の変形により、接触不良などを引き起こす場合があります。
-
-
Use this product with keeping the cooling fin's flatness between screw holes within 100um at 100mm and the
roughness within 10um. Also keep the tightening torque within the limits of this specification. Too large convex
of cooling fin may cause isolation breakdown and this may lead to a critical accident. On the other hand, too
large concave of cooling fin makes gap between this product and the fin bigger, then, thermal conductivity will
be worse and over heat destruction may occur.
100mm 100um
10um
以下にして下さい。ꢀ過大な凸反り
冷却フィンはネジ取り付け位置間で平坦度を 以下、表面の粗さは
で
があったりすると本製品が絶縁破壊を起こし、重大事故に発展する場合があります。また、過大な凹反りやゆがみ等があると、
本製品と冷却フインの間に空隙が生じて放熱が悪くなり、熱破壊に繋がることがあります。
In case of mounting this product on cooling fin, use thermal compound to secure thermal conductivity. If the
thermal compound amount was not enough or its applying method was not suitable, its spreading will not be
enough, then, thermal conductivity will be worse and thermal run away destruction may occur.
Confirm spreading state of the thermal compound when its applying to this product.
-
(Spreading state of the thermal compound can be confirmed by removing this product after mounting.)
素子を冷却フィンに取り付ける際には、熱伝導を確保するためのコンパウンド等をご使用ください。又、塗布量が不足したり、
塗布方法が不適だったりすると、コンパウンドが十分に素子全体に広がらず、放熱悪化による熱破壊に繋がる事があります。
コンバウンドを塗布する際には、製品全面にコンパウンドが広がっている事を確認してください。
(実装した後に素子を取りはずすとコンパウンドの広がり具合を確認する事が出来ます。)
It shall be confirmed that IGBT's operating locus of the turn-off voltage and current are within the RBSOA
specification. This product may be broken if the locus is out of the RBSOA.
ターンオフ電圧・電流の動作軌跡がRBSOA仕様内にあることを確認して下さい。RBSOAの範囲を超えて使用すると素子が破壊
する可能性があります。
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Warning s
If excessive static electricity is applied to the control terminals, the devices m ay be broken. Im plement som e
countermeasures against static electricity.
制御端子に過大な静電気が印加された場合、素子が破壊する場合があります。取り扱い時は静電気対策を実施して下さい。
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Never add the excessive mechanical stress to the main or control term inals when the product is applied to
equipm ents. The module structure m ay be broken.
素子を装置に実装する際に、主端子や制御端子に 過大な応力を与えないで下さい。端子構造が破壊する可能性があ ります。
In case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE shall be set enough value to prevent
this m alfunction. (Recom mended value : -VGE = -15V)
逆バイアスゲート電圧-VGEが不足しますと誤点弧を起こす可能性があります。誤点弧を起こさない為に -VGEは十分な値で
設定して下さい。ꢀ（推奨値 : -VGE = -15V)
In case of higher turn-on dv/dt of IGBT, erroneous turn-on of opposite arm IGBT m ay occur. Use this product in
the m ost suitable drive conditions, such as +VGE, -VGE, RG to prevent the malfunction.
ターンオン dv/dt が高いと対抗アームのＩＧＢＴが誤点弧を起こす可能性があります。誤点弧を起こさない為の最適なドライブ
条件（+VGE, -VGE, RG等）でご使用下さい。
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This product m ay be broken by avalanche in case of VCE beyond m axim um rating VCES is applied between
C-E term inals. Use this product within its absolute m axim um voltage.
VCESを超えた電圧が印加された場合、アバランシェを起こして素子破壊する場合があります。VCEは必ず絶対定格の範囲内
でご使用下さい。
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Lower +VGE decrease IGBT saturation current. +VGE shall be set m ore or equal than 15V in case of maximum
collector current to be 50A (2 tim es of Ic rating). If +VGE is less than 15V, the product m ay not be able to flow
50A of collector current.
ゲート電圧が低いとIGBTのコレクタ飽和電流は下がります。定格電流の2倍(50A)まで使用する場合は、ゲート電圧を15V以上
に設定して下さい。ゲート電圧が15V未満ですと、コレクタ飽和電流は50Aに 達しない可能性があります。
Incase of soldering this product at excessive heat condition, the package of this product m ay be deteriorated. Please
handle with care for soldering process.
製品を過大な温度で半田付けした場合、パッケージの劣化を引起す可能性があります。半田付けプロセスに注意してご使用
ください。
Cautions
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Fuji Electric Device Technology is constantly making every endeavor to improve the product quality and reliability.
However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injury or
death, damage to property like by fire, and other social damage resulted from a failure or malfunction of
the Fuji Electric Device Technology semiconductor products, take some measures to keep safety such as redundant
design, spread-fire-preventive design, and malfunction-protective design.
富士電機デバイステクノロジーは絶えず製品の品質と信頼性の向上に努めています。しかし、半導体製品は故障が発生したり、
誤動作する場合があります。富士電機デバイステクノロジー製半導体製品の故障または誤動作が、結果として人身事故・火災
等による財産に対する損害や社会的な損害を起こさないように冗長設計・延焼防止設計・誤動作防止設計など安全確保
のための手段を講じて下さい。
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The application examples described in this specification only explain typical ones that used the Fuji Electric Device
Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the
enforcement rights.
本仕様書に記載してある応用例は、富士電機デバイステクノロジー製品を使用した代表的な応用例を説明するものであり、
本仕様書によって工業所有権、その他権利の実施に対する保障または実施権の許諾を行うものではありません。
The product described in this specification is not designed nor made for being applied to the equipment or
systems used under life-threatening situations. When you consider applying the product of this specification
to particular used, such as vehicle-mounted units, shipboard equipment, aerospace equipment, medical devices,
atomic control systems and submarine relaying equipment or systems,ꢀplease apply after confirmation
of this product to be satisfied about system construction and required reliability.
本仕様書に記載された製品は、人命にかかわるような状況下で使用される機器あるいはシステムに用いられることを
目的として設計・製造されたものではありません。本仕様書の製品を車両機器、船舶、航空宇宙、医療機器、原子力
制御、海底中継機器あるいはシステムなど、特殊用途へのご利用をご検討の際は、システム構成及び要求品質に
満足することをご確認の上、ご利用下さい。
If there is any unclear matter in this specification, please contact Fuji Electric Device Technology Co.,Ltd.
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