6MBP75TEA060_技术文档

6MBP75TEA060

Econo IPM series

600V / 75A 6 in one-package

Features

· Temperature protection provided by directly detecting the junction

temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Item

Symbol

Rating

Unit

Min.

Max.

VDC

VDC(surge)

VSC

VCES

IC

Bus voltage

DC

0

450

500

400

600

75

V

Surge

0

V

Short operating

200

V

Collector-Emitter voltage *1

Collector current

0

-

V

DC

A

ICP

1ms

-

150

75

A

-IC

Duty=75.0% *2

-

A

PC

Collector power dissipation One transistor *3

Supply voltage of Pre-Driver *4

Input signal voltage *5

-

198

20

W

V

VCC

Vin

-0.5

Vcc+0.5

3

V

Iin

Input signal current

-

mA

V

VALM

IALM

Tj

Alarm signal voltage *6

-0.5

Vcc

20

Alarm signal current *7

-

mA

°C

V

Junction temperature

150

100

125

260

AC2500

3.5

Topr

Tstg

Operating case temperature

Storage temperature

-20

-40

Tsol

Solder temperature *8

-

Viso

Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)

Screw torque

Mounting (M5)

N·m

Note

*1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W

*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6) x 100=75.0%

*3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]

*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13

*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.

*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.

*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.

*8 : Immersion time 10±1sec.

6MBP75TEA060

IGBT-IPM

Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)

Main circuit

Item

Symbol

Condition

Min.

Typ.

Max.

Unit

ICES

VCE=600V Vin terminal open.

-

1.0

2.4

-

mA

V

Collector current at off signal input

Collector-Emitter saturation voltage

VCE(sat)

VF

Ic=75A

Terminal

Chip

-

2.0

-Ic=75A

Terminal

Chip

-

2.6

-

V

Forward voltage of FWD

-

1.6

ton

toff

trr

VDC=300V,Tj=125°C

Turn-on time

1.2

-

µs

IC=75A Fig.1, Fig.6

Turn-off time

3.6

0.3

-

VDC=300V, IC=75A Fig.1, Fig.6

Internal wiring inductance=50nH

Main circuit wiring inductace=54nH

Reverse recovery time

Maximum Avalanche Energy

(A non-repetition)

-

PAV

40

mJ

Control circuit

Item

Symbol

Iccp

Condition

Min.

Typ.

Max. Unit

Switching Trequency : 0 to 15kHz

Tc=-20 to 125°C Fig.7

ON

Supply current of P-line side pre-driver(one unit)

Supply current of N-line side pre-driver

Input signal threshold voltage (on/off)

mA

V

-

18

65

ICCN

-

Vin(th)

1.00

1.25

1.35

1.70

1.95

OFF

V

1.60

8.0

VZ

Rin=20k ohm

Input zener voltage

V

-

tALM

Tc=-20°C Fig.2

Tc=25°C Fig.2

Tc=125°C Fig.2

Alarm terminal

Alarm signal hold time

ms

ohm

1.1

-

2.0

-

4.0

1575

RALM

Current limit resistor

1425

1500

Protection Section ( Vcc=15V)

Item

Symbol

Condition

Min.

Typ.

Max. Unit

113

-

Over Current Protection Level of Inverter circuit

Over Current Protection Delay time

SC Protection Delay time

IOC

A

Tj=125°C

-

5

-

tDOC

tSC

µs

°C

V

Tj=125°C

-

8

Tj=125°C Fig.4

Surface of IGBT chips

150

-

IGBT Chip Over Heating

TjOH

TjH

20

-

12.5

-

Over Heating Protection Hysteresis

Under Voltage Protection Level

Under Voltage Protection Hysteresis

11.0

0.2

VUV

VH

0.5

V

Thermal characteristics( Tc=25°C)

Item

Symbol

Rth(j-c)

Rth(c-f)

Min.

Typ.

Max.

Unit

Junction to Case thermal resistance *10

Inverter

IGBT

FWD

-

0.63

°C/W

0.855 °C/W

-°C/W

Case to fin thermal resistance with compound

*10 : (For 1 device, Case is under the device)

0.05

Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)

Item

Condition

Min.

Typ.

Max.

Unit

Common mode rectangular noise

Pulse width 1µs, polarity ±,10minuets

Judge : no over-current, no miss operating

Rise time 1.2µs, Fall time 50µs

±2.0

-

kV

Common mode lightning surge

±5.0

-

kV

Interval 20s, 10 times

Judge : no over-current, no miss operating

Recommendable value

Item

DC Bus Voltage

Symbol

VDC

VCC

-

Min.

-

Typ.

Max.

400

Unit

V

-

15.0

-

Operating Supply Voltage of Pre-Driver

Screw torque (M5)

13.5

2.5

16.5

3.0

V

Nm

Weight

Item

Symbol

Min.

Typ.

Max.

Unit

Weight

Wt

-

270

-

g

6MBP75TEA060

IGBT-IPM

Vin(th)

Vin

On

Vin(th)

trr

90%

50%

Ic

90%

ton

10%

toff

Figure 1. Switching Time Waveform Definitions

off

/Vin

on

Gate On

Vge (Inside IPM )

Gate Off

Fault (Inside IPM

)

normal

alarm

/ALM

2ms (typ.)

t_{ALM > Max.}

1

Fault : Over-current,Over-heat or Under-voltage

Figure 2. Input/Output Timing Diagram

t_{ALM > Max.}

t_ALM

2

3

tsc

Ic

ALM

I

ALM

I

Figure.4 Definition of tsc

Vcc

P

20k

L

DC

300V

IPM

+

DC

15V

Vin

HCP-L

4504

CT

VccU

20k

P

GND

N

Ic

IPM

DC

15V

VinU

U

V

Figure 6. Switching Characteristics Test Circuit

SW1

AC200V

GNDU

Vcc

+

20k

DC

15V

VinX

W

N

Icc

Vcc

Vin

A

P

4700p

SW2

GND

Noise

IPM

U

V

DC

15V

P.G

+8V

fsw

Earth

Cooling

Fin

W

N

GND

Figure 5. Noise Test Circuit

Figure 7. Icc Test Circuit

6MBP75TEA060

IGBT-IPM

Block diagram

P

U

4

VccU

3

VinU

Pr e- Driv er

2

AL MU

ALM

R

1.5k

Vz

GNDU

Vcc V

1

8

7

6

VinV

AL MV

R ^ALM1.5k

GNDV

5

V

12

11

VccW

VinW

ALMW ¹⁰

GNDW

R ^ALM1.5k

9

W

Vcc 14

VinX

16

Pr e- Driv er

Vz

GND ¹³

VinY

17

Pre-drivers include following functions

1.Amplifier for driver

2.Short circuit protection

VinZ 18

3.Under voltage lockout circuit

4.Over current protection

5.IGBT chip over heating protection

B

VinDB

15

AL M

19

ALM

R

1.5k

N

Outline drawings, mm

Mass : 270g

6MBP75TEA060

IGBT-IPM

Characteristics

Control circuit characteristics (Respresentative)

Input signal threshold voltage

vs. Power supply voltage

Power supply current vs. Switching frequency

Tc=125°C

Tj=25°C

Tj=125°C

60

2.5

2

P-side

N-side

50

} Vin(off)

} Vin(on)

40

1.5

1

Vcc=17V

Vcc=15V

30

20

10

0

Vcc=13V

Vcc=17V

Vcc=15V

Vcc=13V

0.5

0

12

13

14

15

16

17

18

0

5

10

15

20

25

Power supply voltage : Vcc (V)

Switching frequency : fsw (kHz)

Under voltage vs. Junction temperature

Under voltage hysterisis vs. Jnction temperature

14

12

10

8

1

0.8

0.6

0.4

0.2

0

6

4

2

0

20

40

60

80

100

120

140

20

40

60

80

100

120

140

Junction temperature : Tj (°C)

Over heating characteristics

TjOH,TjH vs. Vcc

Alarm hold time vs. Power supply voltage

3

200

150

100

TjOH

2.5

2

Tc=100°C

Tc=25°C

1.5

1

50

0

0.5

0

TjH

12

13

14

15

16

17

18

12

13

14

15

16

17

18

Power supply voltage : Vcc (V)

6MBP75TEA060

IGBT-IPM

Main circuit characteristics (Respresentative)

Collector current vs. Collector-Emitter voltage

Tj=25°C(Terminal)

Collector current vs. Collector-Emitter voltage

Tj=25°C(Chip)

100

75

50

25

0

Vcc=15V

75

Vcc=17V

Vcc=13V

50

25

0

0.5

1

1.5

2

2.5

3

0

0.5

1

1.5

2

2.5

3

Collector-Emitter voltage : Vce (V)

Collector current vs. Collector-Emitter voltage

Tj=125°C(Terminal)

Collector current vs. Collector-Emitter voltage

Tj=125°C(Chip)

100

75

50

25

0

100

75

50

25

0

Vcc=15V

Vcc=17V

Vcc=13V

Vcc=17V

Vcc=13V

0

0.5

1

1.5

2

2.5

3

0

0.5

1

1.5

2

2.5

3

Collector-Emitter voltage : Vce (V)

Forward current vs. Forward voltage

(Chip)

Forward current vs. Forward voltage

(Terminal)

150

100

50

150

100

50

125°C 25°C

125°C

25°C

0

0.5

1

1.5

2

2.5

0

0.5

1

1.5

2

2.5

Forward voltage : Vf (V)

6MBP75TEA060

IGBT-IPM

Switching Loss vs.Collector Current

Edc=300V,Vcc=15V,Tj=25°C

Switching Loss vs.Collector Current

Edc=300V,Vcc=15V,Tj=125°C

6

5

4

3

2

1

0

6

5

4

3

2

1

0

Eon

Eoff

Err

Eoff

Err

0

20

40

60

80

0

20

40

60

80

Collector current : Ic (A)

Transient thermal resistance

FWD

IGBT

1

0.1

0.01

0.001

0.01

0.1

1

Pulse width :Pw (sec)

Power derating for IGBT

(per device)

Power derating for FWD

(per device)

250

200

150

100

50

200

150

100

50

0

20

40

60

80 100 120 140 160

0

20

40

60

80 100 120 140 160

°C

Case Temperature : Tc (

)

Case Temperature : Tc (°C)

6MBP75TEA060

IGBT-IPM

Switching time vs. Collector current

Edc=300V,Vcc=15V,Tj=25°C

Switching time vs. Collector current

Edc=300V,Vcc=15V,Tj=125°C

10000

1000

100

10000

1000

100

ton

toff

ton

toff

tf

10

20

40

60

80

100

120

20

40

60

80

100

120

Collector current : Ic (A)

Reverse recovery characteristics

trr,Irr vs.IF

°C

trr125

°C

trr25

100

10

1

°C

Irr125

°C

Irr25

20

40

60

80

100

120

Forward current:IF(A)


型号：	6MBP75TEA060
厂家：	FUJI ELECTRIC
描述：	Econo IPM series 依可IPM系列
文件：	总8页 (文件大小：303K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

6MBP75TEA060 [FUJI]

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