概述
规格参数
数据手册7MBR25VKB120-50 概述
Insulated Gate Bipolar Transistor IGBT
7MBR25VKB120-50 规格参数
| 生命周期： | Active | 包装说明： | , |
| Reach Compliance Code： | unknown | 风险等级： | 5.73 |
| Base Number Matches： | 1 |
7MBR25VKB120-50 数据手册
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PDF下载http://www.fujielectric.com/products/semiconductor/
7MBR25VKB120-50
IGBT MODULE (V series)
1200V / 25A / PIM
IGBT Modules
Features
Low VCE(sat)
Compact Package
P.C.Board Mount Module
Converter Diode Bridge Dynamic Brake Circuit
RoHS compliant product
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Maximum Ratings and Characteristics
Maximum Ratings (at Tc=25°C unless otherwise specified)
Maximum
ratings
Items
Symbols
Conditions
Units
Collector-Emitter voltage
V
V
CES
GES
1200
±20
25
V
V
Gate-Emitter voltage
Collector current
Ic
Continuous
1ms
T
T
C
C
=100°C
=80°C
I
cp
50
A
-I
c
25
-Ic pulse
1ms
50
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
P
V
V
C
1 device
180
1200
±20
25
W
V
CES
GES
V
IC
Continuous
1ms
T
T
C
C
=80°C
=80°C
Collector current
A
I
CP
50
Collector power dissipation
Repetitive peak reverse voltage (Diode)
Repetitive peak reverse voltage
Average output current
P
V
V
C
1 device
180
1200
1600
25
W
V
RRM
RRM
V
I
I
O
50Hz/60Hz, sine wave
10ms, T=150°C
A
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
FSM
370
685
175
150
A
A2s
j
I2t
half sine wave
Inverter, Brake
Converter
Junction temperature
Tj
Operating junciton temperature
(under switching conditions)
T
jop
Inverter, Brake
150
˚C
Case temperature
T
T
C
125
Storage temperature
stg
-40 to +125
between terminal and copper base (*1)
between thermistor and others (*2)
Isolation voltage
Screw torque
V
iso
AC : 1min.
M4
2500
1.7
VAC
Nm
Mounting (*3)
-
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable value : 1.3-1.7 Nm (M4)
1499
JANUARY 2014
1
7MBR25VKB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Units
Items
Symbols
Conditions
min.
typ.
-
max.
Zero gate voltage collector current
I
CES
GES
V
V
V
GE = 0V, VCE = 1200V
-
-
1.0
mA
nA
V
Gate-Emitter leakage current
Gate-Emitter threshold voltage
I
CE = 0V, VGE = ±20V
-
200
V
GE (th)
CE = 20V, I
C
= 25mA
6.0
-
6.5
7.0
Tj=25°C
2.05
2.40
2.45
1.85
2.20
2.25
0
2.50
VCE (sat)
V
GE = 15V
= 25A
Tj=125°C
Tj=150°C
Tj=25°C
-
-
(terminal)
I
C
-
-
Collector-Emitter saturation voltage
V
-
2.25
VCE (sat)
V
GE = 15V
= 25A
Tj=125°C
Tj=150°C
-
-
(chip)
I
C
-
-
-
Internal gate resistance
Input capacitance
Rg(int)
Cies
ton
tr
-
-
-
Ω
VCE = 10V, VGE = 0V, f = 1MHz
-
2.1
nF
-
0.18
0.14
0.02
0.29
0.06
1.65
1.75
1.70
1.45
1.55
1.50
-
1.20
0.60
-
V
CC = 600V
= 25A
Turn-on time
Turn-off time
-
I
C
tr (i)
toff
tf
-
μs
V
GE = +15 / -15V
-
1.00
0.30
2.10
-
RG = 20Ω
-
Tj=25°C
-
V
F
IF
= 25A
Tj=125°C
Tj=150°C
Tj=25°C
-
(terminal)
-
-
Forward on voltage
V
-
1.90
-
VF
I
I
F
= 25A
= 25A
Tj=125°C
Tj=150°C
-
(chip)
-
-
Reverse recovery time
trr
F
-
0.35
μs
V
GE = 0V
Zero gate voltage collector current
I
CES
GES
-
-
-
-
1.0
mA
V
CE = 1200V
VCE = 0V
Gate-Emitter leakage current
I
200
nA
V
VGE = +20 / -20V
Tj=25°C
-
2.05
2.40
2.45
1.85
2.20
2.25
0
2.50
-
V
CE (sat)
V
GE = 15V
= 25A
Tj=125°C
Tj=150°C
Tj=25°C
-
(terminal)
I
C
-
-
Collector-Emitter saturation voltage
-
2.25
-
V
(chip)
CE (sat)
V
GE = 15V
= 25A
Tj=125°C
Tj=150°C
-
I
C
-
-
Internal gate resistance
Turn-on time
Rg(int)
ton
tr
-
-
-
Ω
-
0.18
0.14
0.29
0.06
-
1.20
0.60
1.00
0.30
1.00
1.65
-
VCE = 600V
-
IC
= 25A
μs
V
GE = +15 / -15V
toff
tf
-
Turn-off time
Reverse current
Forward on voltage
Reverse current
Resistance
R
G
= 20Ω
-
IRRM
V
R
= 1200V
-
mA
V
terminal
chip
-
1.20
1.00
-
V
FM
IF
= 25A
= 1600V
-
-
IRRM
VR
1.0
-
mA
Ω
T = 25°C
-
5000
495
3375
R
B
T = 100°C
T = 25 / 50°C
465
3305
520
3450
B value
K
Thermal resistance characteristics
Characteristics
Items
Symbols Conditions
Units
min.
typ.
max.
Inverter IGBT
Inverter FWD
-
-
-
-
-
-
0.85
1.20
0.85
1.15
-
-
Thermal resistance (1device)
R
th(j-c)
Brake IGBT
-
-
˚C/W
Converter Diode
with Thermal Compound
Contact thermal resistance (1device) (*4)
R
th(c-f)
0.05
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
7MBR25VKB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
50
40
30
20
10
0
50
40
30
20
10
0
VGE=20V
15V
V
GE=20V
15V
12V
12V
10V
10V
8V
8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
Collector-Emitter voltage: VCE[V]
[ Inverter ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
GE=15V / chip
V
50
40
30
20
10
0
8
6
4
Tj=25oC
Tj=150oC
Tj=125oC
Ic=50A
Ic=25A
Ic=12.5A
2
0
0
1
2
3
4
5
5
10
15
20
25
Collector-Emitter voltage: VCE[V]
Gate - Emitter voltage: VGE [V]
[ Inverter ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
GE=0V, f= 1MHz, Tj= 25oC
Dynamic gate charge (typ.)
Vcc=600V Ic=25A Tj= 25°C
V
10.0
VCE
VGE
Cies
1.0
0
Cres
0.1
Coes
0.0
0
10
20
30
-300
0
300
Collector - Emitter voltage: VCE [V]
Gate charge: Qg [nC]
3
7MBR25VKB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=20Ω, Tj=125°C
Vcc=600V, VGE=±15V, Rg=20Ω, Tj=150°C
1000
100
10
1000
100
10
toff
toff
ton
tr
ton
tr
tf
tf
0
10
20
30
40
50
60
0
10
20
30
40
50
60
Collector current: IC [A]
Collector current: IC [A]
[ Inverter ]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=25A, VGE=±15V, Tj=125°C
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=20
Ω
10000
1000
100
10
Eon(150oC)
Eon(125oC)
8
6
4
2
0
toff
ton
tr
Eoff(150oC)
Eoff(125oC)
Err(150oC)
tf
Err(125oC)
10
1
10
100
1000
0
10
20
30
40
50
60
70
Collector current: IC [A]
Gate resistance : Rg [
Ω]
[ Inverter ]
[ Inverter ]
Reverse bias safe operating area (max.)
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=25A, VGE=±15V
+VGE=15V, -VGE<=15V, R >=20Ω, Tj=150°C
G
10
8
60
50
40
30
20
10
0
Eon(150oC)
Eon(125oC)
6
RBSOA
(Repetitivepulse)
4
Eoff(150oC)
Eoff(125oC)
Err(150oC)
Err(125oC)
2
0
0
400
800
1200
1
10
100
1000
Collector-Emitter voltage : VCE [V]
(Main terminals)
Gate resistance : Rg [
Ω]
4
7MBR25VKB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
[ Inverter ]
Forward current vs. forward on voltage (typ.)
chip
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=20
Ω
1000
100
10
50
Tj=25oC
trr(150oC)
40
30
20
10
0
Tj=150oC
Tj=125oC
trr(125oC)
Irr(125oC)
Irr(150oC)
1
0
1
2
3
4
0
10
20
30
40
50
60
Forward on voltage : VF [V]
Forward current : IF [A]
[ Converter ]
Forward current vs. forward on voltage (typ.)
chip
50
40
30
20
10
0
Tj=125oC
Tj=25oC
0.0
0.5
1.0
1.5
2.0
Forward on voltage : VFM [V]
[ Thermistor ]
Temperature characteristic (typ.)
Transient thermal resistance (max.)
10.00
1.00
0.10
0.01
100
10
1
t
4
n
Zth
r
1
1 e
n
n
FWD[Inverter]
Conv. Diode
IGBT[Inverter, Brake]
1
2
3
4
n
[sec]
0.0001 0.0021 0.0133 0.1247
n
rn
IGBT 0.05476 0.08531 0.61649 0.09345
FWD 0.07730 0.12043 0.87033 0.13193
B-IGBT 0.05476 0.08531 0.61649 0.09345
Conv 0.07408 0.11541 0.83407 0.12643
[°C/W]
0.1
0.001
0.010
0.100
1.000
-60 -40 -20
0
20
40
60 80 100 120 140 160 180
Temperature [°C ]
Pulse width : Pw [sec]
5
7MBR25VKB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Brake ]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150oC / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25oC / chip
50
50
40
30
20
10
0
15V
15V
VGE=20V
VGE=20V
12V
40
30
20
10
0
12V
10V
10V
8V
8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE[V]
Collector-Emitter voltage: VCE[V]
[ Brake ]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
GE=15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25oC / chip
V
50
40
30
20
10
0
8
Tj=25oC
Tj=150oC
6
4
Tj=125oC
Ic=50A
Ic=25A
Ic=12.5A
2
0
0
1
2
3
4
5
5
10
15
20
25
Collector-Emitter voltage: VCE[V]
Gate - Emitter voltage: VGE [V]
[ Brake ]
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25oC
Dynamic gate charge (typ.)
Vcc=600V Ic=25A Tj= 25°C
10.0
VCE
VGE
Cies
1.0
0.1
0.0
0
Cres
Coes
0
10
20
30
-300
0
300
Collector - Emitter voltage: VCE [V]
Gate charge: Qg [nC]
6
7MBR25VKB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline drawing (Unit : mm)
Weight: 45g(typ.)
Equivalent circuit
[Converter]
[Brake]
[Inverter]
[Thermistor]
7
7MBR25VKB120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of January 2014.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to
obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied,
under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji
Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's
intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When
using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment
from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame
retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• Machine tools
• OA equipment
• Audiovisual equipment
• Communications equipment (terminal devices)
• Electrical home appliances • Personal equipment
•
Measurement equipment
• Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is
imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such
as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Traffic-signal control equipment
• Emergency equipment for responding to disasters and anti-burglary devices
• Medical equipment
• Trunk communications equipment
• Gas leakage detectors with an auto-shut-off feature
• Safety devices
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without
limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2014 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set
forth herein.
8
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