ERB84-009_01 [FUJI]
SCHOTTKY BARRIER DIODE; 肖特基二极管
| 型号： | ERB84-009_01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
(90V / 2A )
ERB84-009 (2A)
Outline drawings, mm
SCHOTTKY BARRIER DIODE
ø4.0
ø0.8
7.5
25 MIN.
25 MIN.
Marking
Features
Color code : Blue
Low VF
Super high speed switching
High reliability by planer design
Abridged type name
Voltage class
Lot No.
Cathode mark
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Symbol
VRRM
IF(AV)
IFSM
Item
Conditions
Rating
Unit
V
90
Repetitive peak reverse voltage
Average forward current
Surge current
Square wave, duty=1/2
Ta=25°C
2.0*
A
Sine wave
10ms
60
A
Tj
-40 to +150
-40 to +150
Operating junction temperature
Storage temperature
°C
°C
Tstg
* With cooling Cu fin both lead (1t x 20 x 20mm)
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Unit
V
Symbol
Conditions
Max.
0.9
Forward voltage drop
Reverse current
IFM=2.0A
VFM
VR=VRRM
mA
IRRM
2.0
ERB84-009 (2A)
(90V / 2A )
Characteristics
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
102
101
100
10-1
10-2
10-3
10-4
100
10
1
Tj=150°C
Tj=125 °C
Tj=100 °C
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
Tj= 25°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VF Forward Voltage (V)
0
10
20
30
40
50
60
70
80
90
100 110
VR Reverse Voltage (V)
Forward Power Dissipation
Reverse Power Dissipation
5.0
2.4
2.2
DC
Io
360°
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VR
λ
360°
α
Square waveλ=60°C
Square wave λ=120°C
Sine wave λ=180°C
α
=180°C
Square wave λ=180°C
DC
Per 1element
1.6 1.8 2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
2.2
0
10
20
30
40
50
60
70
80
90
100
Io Average Forward Current (A)
VR Reverse Voltage (V)
Current Derating (Io-Ta)
Current Derating (Io-Ta)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
360°
360°
λ
L=10mm
λ
L=5mm
Io
Io
Land an area:5x5mm
Cu area:1tx20x20mm
VR=50V
VR=50V
DC
Sine wave λ=180°C
DC
Square wave λ=180°C
Square wave λ=120°C
Square wave λ=60°C
Sine wave λ=180°C
Square wave λ=180°C
Square waveλ=120°C
Square waveλ=60°C
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
Ta Ambient Temperature (°C)
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
Ta Ambient Temperature (°C)
ERB84-009 (2A)
(90V / 2A )
Current Derating (Io-Tl)
Current Derating (Io-Ta)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.6
VR=50V
360°
2.4
L=10mm
λ
Io
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Land an area:10x10mm
VR=50V
DC
Sine wave λ=180°C
Square wave λ=180°C
Square waveλ=120°C
Square wave λ=60°C
DC
Sine wave λ=180°C
Square waveλ=180°C
Square waveλ=120°C
Square waveλ=60°C
60
70
80
90
100
110
120
130
140
150
160
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
Ta Ambient Temperature (°C)
Tl Lead Temperature (°C)
Junction Capacitance Characteristic (typ.)
Surge Capability
1000
100
10
1000
100
1
10
1
10
100
1
10
100
Number of Cycles at 50Hz
VR Reverse Voltage (V)
Transient Thermal Impedance
102
101
100
10-1
10-2
10-1
100
101
102
103
t
Time (sec.)
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