FMP06N60E [FUJI]

N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET


型号：	FMP06N60E
厂家：	FUJI ELECTRIC
描述：	N-CHANNEL SILICON POWER MOSFET N沟道硅功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲局域网
文件：	总5页 (文件大小：554K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FMP06N60E

FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

Super FAP-E series

Features

Outline Drawings [mm]

Equivalent circuit schematic

Maintains both low power loss and low noise

Lower R_DS(on) characteristic

TO-220AB

More controllable switching dv/dt by gate resistance

Smaller V_GSringing waveform during switching

Narrow band of the gate threshold voltage (3.0±0.5V)

High avalanche durability

Drain(D)

Gate(G)

Applications

Source(S)

Switching regulators

UPS (Uninterruptible Power Supply)

DC-DC converters

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25°C (unless otherwise speciﬁed)

Description

Symbol

Characteristics

Unit

Remarks

VDS

600

Drain-Source Voltage

VDSX

VGS = -30V

Continuous Drain Current

±6

Pulsed Drain Current

±24

Gate-Source Voltage

VGS

±30

Repetitive and Non-Repetitive Maximum AvalancheCurrent

Non-Repetitive Maximum Avalanche Energy

Repetitive Maximum Avalanche Energy

Peak Diode Recovery dV/dt

Note*1

Note*2

Note*3

Note*4

313.7

10.5

4.5

kV/µs

A/µs

dV/dt

-di/dt

Peak Diode Recovery -di/dt

100

Note*5

2.02

105

Ta=25°C

Tc=25°C

Maximum Power Dissipation

150

°C

Operating and Storage Temperature range

Tstg

-55 to + 150

Electrical Characteristics at Tc=25°C (unless otherwise speciﬁed)

Description

Symbol

Conditions

min.

typ.

max.

Unit

Drain-Source Breakdown Voltage

Gate Threshold Voltage

BVDSS

=250µA, VGS=0V

=250µA, VDS=VGS

DS=600V, VGS=0V

DS=480V, VGS=0V

GS=±30V, VDS=0V

600

VGS (th)

2.5

3.0

3.5

ch=25°C

Zero Gate Voltage Drain Current

DSS

µA

Tch=125°C

250

100

1.20

Gate-Source Leakage Current

Drain-Source On-State Resistance

Forward Transconductance

Input Capacitance

GSS

Ω

DS (on)

=3.0A, VGS=10V

=3.0A, VDS=25V

1.03

Ciss

Coss

Crss

td(on)

1100

100

7.5

1650

150

DS=25V

GS=0V

Output Capacitance

f=1MHz

Reverse Transfer Capacitance

cc=300V

GS=10V

Turn-On Time

Turn-Off Time

9.0

100

17.5

=3.0A

td(off)

150

26.5

GＳ=24Ω

Total Gate Charge

Vcc=300V

Gate-Source Charge

=6A

9.0

VGS=10V

Gate-Drain Crossover Charge

Avalanche Capability

L=6.39mH, Tch=25°C

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

VSD

=6A, VGS=0V, Tch=25°C

0.90

0.4

3.3

1.35

trr

µS

µC

=6A, VGS=0V

-di/dt=100A/µs, Tch=25°C

Qrr

Thermal Characteristics

Description

Symbol

Test Conditions

Channel to Case

Channel to Ambient

min.

typ.

max.

1.19

Unit

°C/W

Rth (ch-c)

Rth (ch-a)

Thermal resistance

62.0

Note *1 : Tch≤150°C

Note *2 : Stating Tch=25°C, IAS=2.4A, L=99.8mH, Vcc=60V, RG=50Ω

Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

See to the 'Transient Themal impeadance' graph.

AS limited by maximum channel temperature and avalanche current.

Note *4 : I

Note *5 : I

≤-I

, -di/dt=100A/μs, Vcc≤BVDSS, Tch≤150°C.

, dv/dt≤4.5kV/μs, Vcc≤BVDSS, Tch≤150°C.

See to 'Avalanche Energy' graph.

FUJI POWER MOSFET

FMP06N60E

Allowable Power Dissipation

PD=f(Tc)

Safe Operating Area

I_D=f(V_DS):Duty=0(Single pulse),Tc=25 °c

150

125

100

1µs

10¹

10⁰

10µs

100µs

1ms

D.C.

10^-1

10^-2

10^-3

Power loss waveform :

Square waveform

P_D

10⁰

10¹

10²

10³

100

125

150

VDS [V]

Tc [°C]

Typical Output Characteristics

ID=f(VDS):80 µs pulse test,Tch=25 °C

Typical Transfer Characteristic

ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C

0.1

VDS [V]

VGS[V]

Typical Transconductance

gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C

Typical Drain-Source on-state Resistance

RDS(on)=f(ID):80 µs pulse test,Tch=25 °C

100

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

VGS=4.5V

5.0V

5.5V

6.0V

10V

0.1

100

ID [A]

FUJI POWER MOSFET

FMP06N60E

Gate Threshold Voltage vs. Tch

Drain-Source On-state Resistance

RDS(on)=f(Tch):ID=3A,VGS=10V

VGS(th)=f(Tch):VDS=VGS,ID=250µA

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

max.

typ.

max.

typ.

min.

-50

-25

100

125

150

-50

-25

100

125

150

Tch [°C]

Typical Gate Charge Characteristics

VGS=f(Qg):ID=6A,Tch=25 °C

Typical Capacitance

C=f(VDS):VGS=0V,f=1MHz

10⁴

10³

10²

10¹

10⁰

Vcc= 120V

300V

480V

Ciss

Coss

Crss

10^-1

10⁰

10¹

10²

10³

Qg [nC]

VDS [V]

Typical Forward Characteristics of Reverse Diode

IF=f(VSD):80 µs pulse test,Tch=25 °C

Typical Switching Characteristics vs. ID

t=f(ID):Vcc=300V,VGS=10V,RG=24 Ω

10³

10²

10¹

10⁰

100

td(off)

td(on)

0.1

10^-1

10⁰

10¹

0.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

VSD [V]

FUJI POWER MOSFET

FMP06N60E

Maximum Avalanche Energy vs. starting Tch

E(AV)=f(starting Tch):Vcc=60V,I(AV)<=6A

Maximum Transient Thermal Impedance

Zth(ch-c)=f(t):D=0

10¹

10⁰

350

300

250

200

150

100

I_AS=2.4A

I_AS=3.6A

I_AS=6.0A

10^-1

10^-2

10^-3

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

t [sec]

100

125

150

starting Tch [°C]

FUJI POWER MOSFET

FMP06N60E

WARNING

1. This Catalog contains the product speciﬁcations, characteristics, data, materials, and structures as of October 2008.

The contents are subject to change without notice for speciﬁcation changes or other reasons. When using a product listed in this

Catalog, be sure to obtain the latest speciﬁcations.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either

express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device

Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or

warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which

may arise from the use of the applications described herein.

3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor

products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take

adequate safety measures to prevent the equipment from causing a physical injury, ﬁre, or other problem if any of the products

become faulty. It is recommended to make your design fail-safe, ﬂame retardant, and free of malfunction.

4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has

normal reliability requirements.

• Computers

• Machine tools

• OA equipment

• Audiovisual equipment

• Communications equipment (terminal devices)

• Electrical home appliances • Personal equipment

• Measurement equipment

• Industrial robots etc.

5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed

below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for

such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's

product incorporated in the equipment becomes faulty.

• Transportation equipment (mounted on cars and ships)

• Trafﬁc-signal control equipment

• Trunk communications equipment

• Gas leakage detectors with an auto-shut-off feature

• Emergency equipment for responding to disasters and anti-burglary devices

• Medical equipment

• Safety devices

6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic

equipment (without limitation).

• Space equipment

• Aeronautic equipment

• Nuclear control equipment

• Submarine repeater equipment

No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device

Technology Co., Ltd.

8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before

using the product.

Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in

accordance with instructions set forth herein.

相关型号：