FMP07N50E [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | FMP07N50E |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总5页 (文件大小：460K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMP07N50E
FUJI POWER MOSFET
3
N-CHANNEL SILICON POWER MOSFET
Super FAP-E series
Features
Outline Drawings [mm]
Equivalent circuit schematic
Maintains both low power loss and low noise
Lower RDS(on) characteristic
TO-220AB
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Drain(D)
Gate(G)
Applications
Source(S)
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
V
Remarks
VDS
500
500
Drain-Source Voltage
VDSX
V
VGS = -30V
Continuous Drain Current
I
I
D
±6.5
±26
A
Pulsed Drain Current
DP
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
I
AR
6.5
A
Note*1
Note*2
Note*3
Note*4
E
E
AS
AR
266
mJ
mJ
kV/µs
A/µs
9.0
dV/dt
-di/dt
5.4
Peak Diode Recovery -di/dt
100
Note*5
2.02
90
Ta=25°C
Tc=25°C
Maximum Power Dissipation
P
D
W
T
ch
150
°C
°C
Operating and Storage Temperature range
Tstg
-55 to +150
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
-
max.
-
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
I
I
D
=250µA, VGS=0V
=250µA, VDS=VGS
DS=500V, VGS=0V
DS=400V, VGS=0V
GS=±30V, VDS=0V
500
V
V
VGS (th)
D
2.5
3.0
-
3.5
25
V
V
V
T
ch=25°C
-
Zero Gate Voltage Drain Current
I
DSS
µA
Tch=125°C
-
-
250
100
0.85
-
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
I
GSS
-
10
0.73
7
nA
Ω
R
DS (on)
I
I
D
=3.3A, VGS=10V
=3.3A, VDS=25V
-
g
fs
D
3.5
S
Ciss
Coss
Crss
td(on)
tr
-
1050
95
7
1575
142.5
10.5
16.5
10.5
113
21
V
V
DS=25V
GS=0V
Output Capacitance
-
pF
ns
f=1MHz
Reverse Transfer Capacitance
-
-
11
7
V
V
cc=300V
GS=10V
Turn-On Time
Turn-Off Time
-
I
R
D
=3.3A
=10Ω
td(off)
tf
-
75
14
32
8
G
-
Total Gate Charge
Q
Q
Q
G
-
48
Vcc=250V
Gate-Source Charge
Gate-Drain Charge
GS
GD
I
D
=6.5A
-
12
nC
VGS=10V
-
9
13.5
-
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
AV
L=4.61mH, Tch=25°C
6.5
-
A
V
VSD
I
F
=6.5A, VGS=0V, Tch=25°C
-
-
-
0.86
0.34
3.0
1.30
-
trr
µs
µC
I
F
=6.5A, VGS=0V
-di/dt=100A/µs, Tch=25°C
Qrr
-
Thermal Characteristics
Description
Symbol
Test Conditions
Channel to Case
Channel to Ambient
min.
typ.
max.
1.390
62.0
Unit
°C/W
°C/W
Rth (ch-c)
Rth (ch-a)
Thermal resistance
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=2.6A, L=72.1mH, Vcc=50V, RG=50Ω
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
E
AS limited by maximum channel temperature and avalanche current.
Note *4 : I
Note *5 : I
F
≤-I
≤-I
D
, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
, dv/dt=5.4kV/µs, Vcc≤BVDSS, Tch≤150°C.
See to 'Avalanche Energy' graph.
F
D
1
FUJI POWER MOSFET
FMP07N50E
Safe Operating Area
ID=f(VDS):Duty=0(Single pulse),Tc=25 °c
Allowable Power Dissipation
PD=f(Tc)
102
101
100
10-1
10-2
120
100
80
60
40
20
0
t=
1µs
10µs
100µs
1ms
Power loss waveform :
Square waveform
PD
t
DC
103
10-1
100
101
VDS [V]
102
0
25
50
75
Tc [ C]
100
125
150
°
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25 °C
18
15
12
9
101
100
10V
6.0V
10-1
10-2
10-3
10-4
5.0V
6
4.5V
3
VGS=4.0V
20
0
0
1
2
3
4
5
6
7
8
9
10
0
4
8
12
16
24
VDS [V]
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25 °C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25 °C
100
10
1.6
1.4
1.2
1.0
0.8
0.6
5V
4.5V
VGS=4.0V
6V
10V
1
0.1
0.01
0
4
8
12
16
20
0.01
0.1
1
10
100
ID [A]
ID [A]
2
FUJI POWER MOSFET
FMP07N50E
Gate Threshold Voltage vs. Tch
Drain-Source On-state Resistance
VGS(th)=f(Tch):VDS=VGS,ID=250µA
RDS(on)=f(Tch):ID=3.3A,VGS=10V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
max.
typ.
max.
typ.
min.
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Gate Charge Characteristics
VGS=f(Qg):ID=6.5A,Tch=25 °C
104
103
102
101
100
20
18
16
14
12
10
8
Ciss
Vcc= 120V
300V
480V
Coss
Crss
6
4
2
0
10-2
10-1
100
VDS [V]
101
102
0
10
20
30
40
50
60
70
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=22 Ω
103
102
101
100
100
10
td(off)
tf
1
td(on)
tr
0.1
0.01
10-1
100
ID [A]
101
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
3
FUJI POWER MOSFET
FMP07N50E
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=6.5A
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
300
250
200
150
100
50
IAS=2.6A
100
IAS=3.9A
IAS=6.5A
-1
10
-2
10
-3
10
-6
-5
10
-4
10
-3
10
-2
10
-1
10
10
100
t [sec]
0
0
25
50
75
100
125
150
starting Tch [°C]
4
FUJI POWER MOSFET
FMP07N50E
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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5
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