SIH31-10R [FUJI]
Rectifier Diode, 1 Phase, 1 Element, 150A, 1000V V(RRM), Silicon,;型号: | SIH31-10R |
厂家: | FUJI ELECTRIC |
描述: | Rectifier Diode, 1 Phase, 1 Element, 150A, 1000V V(RRM), Silicon, 二极管 |
文件: | 总4页 (文件大小:200K) |
下载: | 下载PDF数据表文档文件 |
SIH31-12
Rectifier Diode, 1 Phase, 1 Element, 150A, 1200V V(RRM), Silicon,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
FUJI
SIH31-12R
Rectifier Diode, 1 Phase, 1 Element, 150A, 1200V V(RRM), Silicon,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
FUJI
SIH530S-E3
TRANSISTOR POWER, FET, ROHS COMPLIANT, SMD-220, 3 PIN, FET General Purpose PowerWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
VISHAY
SIH530STR
TRANSISTOR POWER, FET, SMD-220, 3 PIN, FET General Purpose PowerWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
VISHAY
SIHA105N60EF-GE3
Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
VISHAY
SIHA11N80AE-GE3
Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
SIHB10N40D-GE3
Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
VISHAY
SIHB11N80AE-GE3
Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
SIHB125N60EF-GE3
Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
SIHB12N50C-E3
100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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30
VISHAY
SIHB12N50C-E3
SiHB12N60E E Series Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
SIHB12N50E-GE3
Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
SIHB12N60E
E Series Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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26
VISHAY
SIHB15N60E
E Series Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
18
VISHAY
SIHB15N65E-GE3
MOSFET N-CH 650V 15A TO263Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
VISHAY
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