TP862C15R [FUJI]

High Voltage Schottky barrier diode; 高电压肖特基势垒二极管
TP862C15R
型号: TP862C15R
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

High Voltage Schottky barrier diode
高电压肖特基势垒二极管

整流二极管 高压
文件: 总3页 (文件大小:78K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
(150V / 10A )  
[0401]  
TP862C15R (10A)  
High Voltage Schottky barrier diode  
Outline drawings, mm  
Major characteristics  
Characteristics TP862C15R Units Condition  
VRRM  
VF  
150  
0.90  
10  
V
V
A
Tc=25°C, MAX.  
IO  
Package : T-pack  
Features  
Applications  
Epoxy resin UL : V-0  
Low VF  
High frequency operation  
DC-DCconverters  
AC adapter  
High Voltage  
Connection diagram  
Center tap connection  
Maximum ratings and characteristics  
1
2
3
Absolute maximum ratings (at Tc=25°C Unless otherwise specified )  
Symbol  
VRSM  
VRRM  
Io  
Conditions  
Item  
Rating  
150  
150  
10  
Unit  
V
Repetitive peak surge reverse voltage  
Repetitive peak reverse voltage  
Average output current  
tw=500ns, duty=1/40  
V
Square wave, duty=1/2  
Tc=133°C  
*
A
Sine wave  
10ms 1shot  
IFSM  
Tj  
Non-repetitive surge current **  
Operating junction temperature  
Storage temperature  
75  
A
+150  
°C  
°C  
Tstg  
-40 to +150  
* Out put current of center tap full wave connection  
**Rating per element  
Electrical characteristics (at Tc=25°C Unless otherwise specified )  
Item  
Symbol  
Max.  
0.90  
Unit  
V
Conditions  
IFM=10A  
Forward voltage drop  
Reverse current  
VF  
VR=VRRM  
IR  
150  
1.5  
µA  
Junction to case  
Rth(j-c)  
Thermal resistance  
°C/W  
Mechanical characteristics  
Mounting torque  
Recommended torque  
0.3 to 0.5  
2
N·m  
g
Approximate mass  
(150V / 10A )  
TP862C15R (10A)  
Characteristics  
Reverse Characteristic (typ.)  
Forward Characteristic (typ.)  
100  
10  
1
Tj=150°C  
Tj=125°C  
Tj=100°C  
101  
100  
Tj=150°C  
Tj=125°C  
10-1  
10-2  
10-3  
10-4  
Tj=100°C  
Tj=25°C  
Tj= 25°C  
0.1  
0
10 20 30 40 50 60 70 80 90 100110120130140150160  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1  
V F Forward Voltage (V)  
V R Reverse Voltage (V)  
Reverse Power Dissipation (max.)  
Forward Power Dissipation (max.)  
8
6
4
2
0
DC  
Io  
360°  
6
λ
VR  
360°  
α
Square wave λ=60°  
Square wave λ=120°  
4
2
0
Sine wave λ=180°  
α=180°  
Square wave λ=180°  
DC  
Per 1element  
0
2
4
6
0
20  
40  
60  
80  
100  
120  
140  
160  
I o Average Forward Current (A)  
V R Reverse Voltage (V)  
Junction Capacitance Characteristic (max.)  
Current Derating (Io-Tc) (max.)  
1000  
100  
10  
160  
150  
140  
130  
120  
110  
100  
90  
DC  
Sine wave λ=180°  
Square wave λ=180°  
Square wave λ=120°  
Square wave λ=60°  
360°  
λ
Io  
VR=75V  
80  
0
5
10  
15  
1
10  
100  
1000  
I o Average Output Current (A)  
VR Reverse Voltage (V)  
λ:Conduction angle of forward current for each rectifier element  
Io:Output current of center-tap full wave connection  
TP862C15R (10A)  
(150V / 10A )  
Surge Capability (max.)  
Surge Current Ratings (max.)  
1000  
100  
10  
1000  
100  
10  
1
10  
100  
1000  
1
10  
100  
Number of Cycles at 50Hz  
tTime (ms) Sinewave  
Transient Thermal Impedance (max.)  
101  
100  
10-1  
10-2  
Rth(j-c):1.5°C/W  
10-3  
10-2  
10-1  
100  
101  
102  
t
Time (sec)  

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