YG835C03R [FUJI]
SCHOTTKY BARRIER DIODE; 肖特基二极管
| 型号： | YG835C03R |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
YG835C03R
(30V / 20A TO-22OF15)
Outline Drawings
SCHOTTKY BARRIER DIODE
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
10±0.5
1.2±0.2
0.6 +0.2
Features
Low VF
-0
0.7±0.2
2.7±0.2
2.54±0.2
Super high speed switching.
High reliability by planer design.
JEDEC
EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
2
1
3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbol
VRRM
VRSM
Viso
Conditions
Rating
Item
Unit
V
30
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolation voltage
35 *1
1500
20*
tw=500ns, duty=1/40
V
Terminals to Case,
AC. 1min.
V
duty=1/2, Tc=108°C
Square wave
IO
Average output current
Surge current
A
IFSM
Tj
Sine wave 10ms
120
A
+150
Operating junction temperature
Storage temperature
°C
°C
Tstg
-40 to +150
*
Out put current of centertap full wave connection.
Electrical Characteristics (Ta=25°C Unless otherwise specified )
*1 : Tentative
Item
Max.
0.45
Unit
V
Symbol
VF
Conditions
IF=6.0A
Forward voltage drop **
Reverse current **
Thermal resistance
15.0
2.5
mA
IR
VR=VRRM
°C/W
Rth(j-c)
Junction to case
**Rating per element
Mechanical Characteristics
N · m
g
0.3 to 0.5
2.3
Recommended torque
Mounting torque
Weight
(30V / 20A TO-22OF15)
YG835C03R
Characteristics
Reverse Characteristic (typ.)
Forward Characteristic (typ.)
103
102
101
100
10-1
10-2
100
Tj=150 oC
Tj=125oC
10
Tj=100oC
o C
Tj=150
Tj=125 o C
Tj=100 o C
1
Tj=25 o C
Tj=25oC
0.1
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
10
20
30
40
VR Reverse Voltage (V)
VF Forward Voltage (V)
Forward Power Dissipation
Reverse Power Dissipation
11
10
9
40
35
30
25
20
15
10
5
Io
DC
360°
λ
VR
360°
8
α
7
Square wave λ=60o
Square wave λ=120o
Sine wave λ=180o
Square wave λ=180o
6
5
=180o
α
DC
4
3
2
1
Per 1element
10
0
0
0
1
2
3
4
5
6
7
8
9
11
0
5
10
15
20
25
30
Io Average Forward Current (A)
VR
Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
Current Derating (Io-Tc)
160
150
140
130
120
110
100
90
1000
100
10
DC
Sine wave λ=180o
Square wave λ=180o
Square wave λ=120o
360°
80
Square wave =60o
λ
λ
Io
70
VR=20V
60
50
10
100
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
Io
Average Output Current
(A)
VR
Reverse Voltage (V)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
YG835C03R
(30V / 20A TO-22OF15)
Surge Capability
1000
100
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
102
101
100
10-1
10-3
10-2
10-1
100
101
102
t
Time (sec.)
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