YG912S2R [FUJI]
LOW LOSS SUPER HIGH SPEED DIODE; 低损失超高速二极管
| 型号： | YG912S2R |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | LOW LOSS SUPER HIGH SPEED DIODE |
| 文件： | 总3页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
YG912S2R
(200V / 10A TO-22OF15)
Outline Drawings
LOW LOSS SUPER HIGH SPEED DIODE
+0.2
-0.1
4.5±0.2
10.5±0.5
ø3.2
2.7±0.2
1.2±0.2
0.7±0.2
0.6±0.2
2.7±0.2
Features
Low VF
5.08±0.4
Super high speed switching.
High reliability by planer design.
JEDEC
EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
3
1
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Symbol
VRRM
VRSM
Viso
Conditions
Rating
200
Item
Unit
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolation voltage
V
V
200
Terminals to Case,
AC. 1min.
1500
V
duty=1/2, Tc=116°C
Rectangl wave
IO
10
Average output current
Surge current
A
IFSM
Tj
Sine wave 10ms
80
A
-40 to +150
-40 to +150
Operating junction temperature
Storage temperature
°C
°C
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
VF
Conditions
IF=10A
Max.
0.98
200
35
Unit
V
Forward voltage drop
Reverse current
IR
VR=VRRM
µA
Reverse recovery time
Thermal resistance
trr
IF=0.1A,IR=0.2A,Irec=0.05A
Junction to case
ns
Rth(j-c)
3.5
°C/W
Mechanical Characteristics
Mounting torque
N · m
g
0.3 to 0.5
2.3
Recommended torque
Weight
(200V / 10A TO-22OF15)
YG912S2R
Characteristics
Forward Characteristic (typ.)
Reverse Characteristic (typ.)
100
104
103
102
101
100
10-1
Tj=150 o
C
C
Tj=125 o
10
Tj=100 o
C
o
Tj=150 C
o
Tj=125 C
1
o
Tj=100 C
o C
Tj=25
Tj= 25 o
C
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
50
100
150
200
250
VR Reverse Voltage (V)
VF
Forward Voltage (V)
Forward Power Dissipation
Reverse Power Dissipation
14
12
10
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
360°
Io
DC
VR
λ
360°
α
Square wave =60o
λ
Square wave =120o
λ
Sine wave =180o
λ
Square wave =180o
λ
6
α =180o
DC
4
2
Per 1element
0
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
150
175
200
225
Io
Average Forward Current (A)
VR
Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
Current Derating (Io-Tc)
100
10
1
160
155
150
145
140
135
130
125
120
115
110
105
100
DC
Square wave λ=180o
360°
Sine wave λ=180o
λ
Square wave λ=120o
Io
VR=200V
Square wave λ=60o
1
10
100
0
2
4
6
8
10
12
14
16
Io
Average Output Current (A)
VR
Reverse Voltage (V)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
A-178
YG912S2R
(200V / 10A TO-22OF15)
Surge Capability
1000
100
10
1
10
100
Number of Cycles at 50Hz
Transient Thermal Impedance
102
101
100
10-1
10-2
10-1
100
101
102
103
t
Time (sec.)
A-179
相关型号：
YG967C6R
Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, TO-220AB, TO-220F, FULL PACK-3
FUJI
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