FSE8382D [FUTUREWAFER]
Extra Low Capacitance Latch-up TVS Diode;
| 型号： | FSE8382D |
| 厂家： | 
FutureWafer Tech Co.,Ltd |
| 描述： | Extra Low Capacitance Latch-up TVS Diode 电视 |
| 文件： | 总16页 (文件大小：1899K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Product Description
The FSE838 Series is Designed to Protect High Speed
Data Lines From ESD.
Ultra−Low Capacitance and Low ESD Clamping Voltage
Make This Device an Ideal Solution For Protecting
Voltage Sensitive High Speed Data Lines.
The Standard Package Allows For Easy PCB Layout
And Matched Trace Lengths Necessary to Maintain
Consistent Impedance Between High Speed Differential
Lines Such as USB 3.0/3.1.
DFN0603
Potential Applications
●
●
●
●
●
●
Personal Digital Assistance
Wireless System
e-SATA
High Speed Data Line USB3.0/USB3.1
Ethernet
HDMI-2.1
DFN1006
Feature List
●
●
●
●
Low Line-Capacitance : CL = 0.15 pF at f = 1MHZ
Snap-Back Function : Holding Voltage VH = 2.1V Typ.
SCR Based TVS Technology
Low Clamping Voltage : VCL > 7.5V at IPP = 5A
with RDYN = 0.045 Ω
●
●
Very Low Leakage Current : IL= 0.1 uA
Max Operating Voltage : VRWM: ±3.3 V
DFN1006-3L
IEC Compatibility
●
ESD / Transient Protection According to:
- IEC61000-4-2(ESD) : ±22KV(Contact) / ±22KV(Air)
- IEC61000-4-4(EFT) : ±2.5KV / ±50A (5/50ns)
- IEC61000-4-5(Surge) : ±5A (8/20us)
Mechanical Characteristics
●
Molded JEDEC Package
SOT-363
DFN X2SON-4L
- DFN 0603
- DFN 1006
- DFN 1006-3L
- DFN X2SON-4L
- DFN 2510-10L
- SOT 23-6L
- SOT 363-6L
●
●
●
●
Packing: Tape and Reel
Flammability rating UL 94V-0
Halogen Free
SOT-23-6L
DFN 2510-10L
JEDEC MSL Classification :Level 1
Document No.F121171
www.futurewafer.com.tw
1
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Absolute Maximum Ratings
Maximum Ratings@ TA = 25°C Unless Otherwise Specified
Parameter
Symbol
Test Condition
Value
Min.
Units
Typ.
Max.
Working Voltage
V RWM
P PP
V
-3.3
-
-
-
-
-
+3.3
60
Peak Pulse Power
Peak Pulse Current
Electrostatic Discharge
8/20 us,
Watts
A
I PP
+5
Current Waveform
-5
V ESD (Contact)
V ESD (Air)
T OP
R = 330Ω,C = 150pF
KV
-22
+22
Operating Temperature
Storage Temperature
-55
-65
-
-
+150
+150
°C
T STG
Electrical Characteristics
DC Characteristics
Parameter
Symbol
Test Condition
Value
Min.
Units
Typ.
Max.
Breakdown Voltage
Holding Voltage
Holding Current
Leakage Current
V BR
V HOLD
I HOLD
I L
It = 1mA , I/O to GND
I = Ih , I/O to GND
5.5
7.0
2.1
25
V
-
-
-
-
-
V = Vh , I/O to GND
V = 3.3V , I/O to GND
mA
uA
-
0.1
-
AC Characteristics
Parameter
Symbol
Test Condition
Value
Min.
Units
Typ.
Max.
Line Capacitance
C L
V = 0V,f = 1MHZ,
0.15
0.20
pF
-
-
I/O to I/O
V = 0V,f=1MHZ,
0.30
0.12
0.40
I/O to GND
V = 0V,f=2.5GHZ,
-
-
I/O to I/O
Protection Characteristics
Parameter
Symbol
V CL,TLP
Test Condition
Value
Min.
-
Units
Typ.
6
Max.
Clamping Voltage
ITLP = 4A,I/O to GND
ITLP = 16A,I/O to GND
IPP = 1A,8/20us,
V
-
14.2
-
-
-
-
V CL,SURGE
7.0
I/O to GND
IPP = 5A,8/20us,
7.5
-
-
-
-
I/O to GND
IPP = 5A,8/20us,
12.0
I/O to I/O
Document No.F121171
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2
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Pin Out
Part No.
FSE8382D
Schematic
Package
DFN0603
FSE8385D
DFN1006
FSE8386D
FSE8388D
DFN1006-3L
DFN1010-4L
FSE8389D
FSE838AT
DFN2510-10L
SOT-23-6L
FSE838CT
SOT-363-6L
Document No.F121171
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3
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Electrical Characteristics
Symbol
V RWM
I R
Parameter
Working Peak Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
V BR
I T
Test Current
V HOLD
I HOLD
R DYN
I PP
Holding Reverse Voltage
Holding Reverse Current
Dynamic Resistance
Maximum Peak Pulse Current
Clamping Voltage @ IPP VC=VHOLD + (IPP*RDYN
V CL
)
Document No.F121171
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4
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Typical Characteristics Diagrams
Fig. 1 IEC61000-4-2 +8KV Contact ESD Clamping Voltage
Fig. 2 IEC61000-4-2 -8KV Contact ESD Clamping Voltage
tp / ns
tp / ns
Fig 3 Transmission Line Pulsing TLP Measurement
Transmission Line Pulsing TLP Voltage (V)
Document No.F121171
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28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Typical Characteristics Diagrams
Fig 4. Non-Repetitive Peak Pulse Power V.S Pulse Time
td-Pulse Width(us)
Fig 6. Pulse Waveform
Fig 5. Power Derating Curve
tt Peak Value IPP
Waveform parameter
tr=8us td=20us
Td=TI IPP/2
Time (us)
Ambient Temp,TA(°C)
Fig 8. Normalized Capacitance vs.Reverse Voltage
Fig 7. Clamping Voltage vs. Peak Pulse Current
VR=-3.3V to +3.3V
f=1MHZ,I/O-I/O
8/20us waveform,
I/O-I/O
I/O-GND
Clamping Voltage –VC (V)
Reverse Voltage VR(V)
Document No.F121171
28-Mar-2021 V2.1
www.futurewafer.com.tw
6
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Soldering Parameters
Document No.F121171
www.futurewafer.com.tw
7
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Ordering information
Part Number
FSE8382D
FSE8385D
FSE8386D
FSE8388D
FSE8389D
FSE838CT
FSE838AT
Component Package
Quantity
Packaging Option
DFN0603
10,000PCS
Tape&reel-8mm tape / 7”reel
DFN1006
DFN1006-3L
DFN1010-4L
DFN2510-10L
SOT-363-6L
SOT-23-6L
3,000PCS
Marking Code Information
Part Number
FSE8382D
FSE8385D
FSE8386D
FSE8388D
FSE8389D
FSE838CT
FSE838AT
Marking Code
.82
.85 / e2
.86
88D
8389F
8CT
F838A
Document No.F121171
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8
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Package Information-DFN0603
DFN0603-2L
Symbol
Min
0.27
-
Max
0.33
0.025
0.29
0.65
0.2
A
A1
b
0.21
0.57
-
D
e
E
L
0.28
0.14
0.35
0.22
Unit:mm
Pad Layout
Unit:mm
Document No.F121171
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9
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Package Information-DFN1006
DFN1006-2L
Symbol
Min
Max
1.05
0.65
0.50
0.05
0.55
A
0.95
0.55
0.40
-
B
C
C1
D
e
0.45
0.65 BSC
0.20
E
0.30
Unit:mm
Pad Layout
Dimensions
DIM
Inches
.033
Millimeters
0.85
( C )
G
X
0.30
0.60
.012
.024
Y
Z
.022
0.55
1.40
.055
Document No.F121171
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10
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Package Information-DFN1006-3L
Millimeters
Symbol
Min
Nom
Max
0.55
0.05
0.55
0.20
0.18
1.05
A
A1
b
b1
c
D
0.45
0.00
0.45
0.10
0.12
0.95
0.50
0.02
0.50
0.15
0.15
1.00
e
E
0.65 BSC
0.55
0.60
0.20
0.25
0.65
0.25
0.30
E1
L
0.15
0.20
L1
0.05 REF
unit: mm
Pad Layout
Unit:mm
Document No.F121171
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11
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Package Information-DFN1010-4L
Dimensions
DIM
A
Min
Max
0.50
0.05
Pin 1 Dot by
Marking
0.40
A1
A3
D
0.00
0.125 REF
0.95
1.05
1.05
0.25
0.35
0.58
0.58
E
0.95
Top View
b
0.15
L
0.15
D2
E2
e
0.38
0.38
0.65 BSC
Unit:mm
Pin #1 Identification Chafmer
0.12MM
Botton View
Side View
Pad Layout
Unit:mm
Document No.F121171
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12
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Package Information-DFN2510-10L
Symbol
Millimeter
MIN
0.450
NOM
0.500
0.020
MAX
0.550
0.050
A
A1
-
b
b1
c
D
e
Nd
E
0.150
0.350
0.100
2.400
0.50 BSC
2.00 BSC
0.900
0.300
0.120
0.200
0.400
0.150
2.500
0.250
0.450
0.200
2.600
1.000
0.380
0.125
1.100
0.430
0.130
L
R
Unit:mm
Pad Layout
Symbol
Dimensions
Millimeters
C
0.875
0.20
0.50
1.00
0.20
0.40
0.675
1.55
1.55
G
P
P1
X
X1
Y
Y1
Z
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28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Package Information-SOT23-6L
Symbol Millimeters
MIN NOM
MAX
1.30
0.10
1.15
0.68
0.50
0.45
0.20
0.16
2.90
2.95
1.64
0.98
1.95
0.50
A
-
-
A1
A2
A3
b
0.04
1.05
0.63
0.36
0.07
1.10
0.65
-
b1
c
0.36
0.14
0.38
-
c1
D
E
E1
e
e1
L
0.14
2.82
2.65
1.56
0.93
1.85
0.40
0.15
2.87
2.80
1.62
0.95
1.90
0.45
L1
L2
0.59 REF
0.25 BSC
Unit : mm
Pad Layout
Document No.F121171
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14
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
Package Information-SOT-363-6L
Symbol
Millimeters
MIN
MAX
0.25
-
0.10
1.10
2.20
A
B
C
D
E
F
G
H
J
0.10
0.12
-
0.80
1.80
1.30
0.65
1.90
1.10
0.15
2.30
1.40
0.30
K
Unit:mm
Pad Layout
Unit:mm
Document No.F121171
www.futurewafer.com.tw
15
28-Mar-2021 V2.1
FSE838 Series
Extra Low Capacitance Latch-up TVS Diode
History
Version
Date
File No.
F121171
F121171
F121171
Recording
New create
Basis
Market
A
04-Apr-2021
13-Apr-2021
28-Mar-2021
2.0
2.1
Update Version
Update Parameter
System
Engineer
Futurewafer Technology Co.,Ltd 台灣未來芯科技股份有限公司
Tel ：+886-3-3350161/FAX ：+886-3-3350172
cherry@futurewafer.com.tw
No. 286-14, Sec. 3, Sanmin Rd., Taoyuan Dist., Taoyuan City 330, Taiwan
Document No.F121171
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28-Mar-2021 V2.1
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