1N11200AR [GENESIC]
Silicon Standard Recovery Diode;
| 型号： | 1N11200AR |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Standard Recovery Diode |
| 文件： | 总3页 (文件大小：780K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N1199A thru 1N1206AR
VRRM = 50 V - 600 V
IF = 12 A
Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 50 V to 600 V VRRM
DO-4 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified
1N1202A(R)
1N1204A(R) 1N1206A(R)
Conditions
1N1199A(R) 1N1200A(R)
Parameter
Symbol
Unit
Repetitive peak reverse
voltage
VRRM
200
50
100
400
600
V
VRMS
VDC
IF
140
200
12
RMS reverse voltage
DC blocking voltage
35
50
12
70
100
12
280
400
12
420
600
12
V
V
A
TC ≤ 150 °C
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
240
240
240
240
240
A
Tj
-55 to 150
-55 to 150
Operating temperature
Storage temperature
-55 to 150 -55 to 150
-55 to 150 -55 to 150
-55 to 150 -55 to 150
-55 to 150 -55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
1N1202A(R)
Conditions
1N1199A(R) 1N1200A(R)
1N1204A(R) 1N1206A(R)
Parameter
Symbol
Unit
VF
IR
IF = 12 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 175 °C
1.1
10
15
V
Diode forward voltage
Reverse current
1.1
10
15
1.1
10
15
1.1
10
15
1.1
10
15
μA
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
2.00
2.00
2.00
2.00
2.00
°C/W
1
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1N1199A thru 1N1206AR
2
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1N1199A thru 1N1206AR
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
M
DO- 4 (DO-203AA)
J
P
D
B
G
N
C
E
F
A
Inches
Millimeters
Min
Max
Min
Max
A
B
C
D
E
F
10-32 UNF
0.424
-----
0.437
0.505
0.800
0.492
0.140
0.405
0.216
φ0.302
0.045
0.79
10.77
-----
-----
11.50
2.90
-----
-----
-----
0.80
1.80
11.10
12.82
20.30
12.50
3.50
------
0.453
0.114
-----
G
J
10.29
5.50
-----
M
N
P
-----
φ7.68
1.15
0.031
0.070
2.00
3
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
相关型号：
1N1124AE3
Rectifier Diode, 1 Phase, 1 Element, 3.3A, 200V V(RRM), Silicon, DO-203AA, METAL, DO-4, 1 PIN
MICROSEMI
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