MBRF500150R [GENESIC]
Silicon Power Schottky Diode;型号: | MBRF500150R |
厂家: | GeneSiC Semiconductor, Inc. |
描述: | Silicon Power Schottky Diode 局域网 二极管 |
文件: | 总3页 (文件大小:478K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBRF500150 thru MBRF500200R
VRRM = 150 V - 200 V
IF(AV) = 500 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200 V VRRM
TO-244AB Package
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRF500200(R)
Parameter
Symbol
MBRF500150(R)
Unit
Repetitive peak reverse
voltage
VRRM
200
150
V
VRMS
VDC
Tj
141
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
106
V
V
200
150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 125 °C
MBRF500200(R)
Parameter
Symbol
IF(AV)
MBRF500150(R)
Unit
A
Average forward current
(per pkg)
500
3500
0.92
500
Peak forward surge
current (per leg)
IFSM
tp = 8.3 ms, half sine
3500
A
Maximum forward voltage
(per leg)
VF
IR
I
FM = 250 A, Tj = 25 °C
V
0.88
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
1
Reverse current at rated
DC blocking voltage (per
leg)
10
50
mA
10
50
Thermal characteristics
Thermal resistance,
junction-case (per leg)
RΘJC
0.30
0.30
°C/W
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRF500150 thru MBRF500200R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRF500150 thru MBRF500200R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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