MBRTA600200R [GENESIC]
Silicon Power Schottky Diode;
| 型号： | MBRTA600200R |
| 厂家： | 
GeneSiC Semiconductor, Inc. |
| 描述： | Silicon Power Schottky Diode |
| 文件： | 总3页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRTA600150 thru MBRTA600200R
VRRM = 150 V - 200 V
IF(AV) = 600 A
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 150 V to 200 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRTA600200(R)
Parameter
Symbol
MBRTA600150(R)
Unit
Repetitive peak reverse
voltage
VRRM
200
150
V
VRMS
VDC
Tj
141
RMS reverse voltage
106
V
V
200
DC blocking voltage
Operating temperature
Storage temperature
150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Tstg
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
TC = 100 °C
MBRTA600200(R)
Parameter
Symbol
IF(AV)
IFSM
MBRTA600150(R)
Unit
A
Average forward current (per
pkg)
600
4000
0.92
600
4000
0.88
Peak forward surge current
(per leg)
tp = 8.3 ms, half sine
IFM = 300 A, Tj = 25 °C
A
Maximum instantaneous
forward voltage (per leg)
VF
V
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
4
4
Reverse current at rated DC
blocking voltage (per leg)
IR
10
50
mA
10
50
Thermal characteristics
Thermal resistance, junction -
case (per leg)
RΘJC
0.28
0.28
°C/W
1
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRTA600150 thru MBRTA600200R
2
www.genesicsemi.com/silicon-products/schottky-rectifiers/
MBRTA600150 thru MBRTA600200R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
3
www.genesicsemi.com/silicon-products/schottky-rectifiers/
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