GDSSF2312 [GOOD-ARK]
High Power and current handing capability;
| 型号： | GDSSF2312 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | High Power and current handing capability |
| 文件： | 总4页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GDSSF2312
D
DESCRIPTION
The SSF2312 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
G
S
Schematic diagram
GENERAL FEATURES
● VDS = 20V,ID = 4.5A
RDS(ON) < 40mΩ @ VGS=2.5V
RDS(ON) < 33mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
3
Application
●Battery protection
2312
●Load switch
●Power management
G
1
2 S
SOT-23 top view
Marking and pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3000 units
2312
SSF2312
SOT-23
Ø180mm
8 mm
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
±8
VGS
4.5
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
13.5
1.25
A
IDM
Maximum Power Dissipation
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
100
℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2312
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±8V,VDS=0V
20
V
1
μA
nA
IGSS
±100
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
VGS=2.5V, ID=4.5A
VGS=4.5V, ID=5A
VDS=10V,ID=5A
0.5
0.65
33
1.2
40
33
V
Drain-Source On-State Resistance
RDS(ON)
mΩ
mΩ
S
27
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
gFS
10
Clss
Coss
Crss
500
300
140
PF
PF
PF
VDS=8V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
20
18
60
28
10
2.3
2.9
40
40
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
Turn-Off Delay Time
108
56
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
15
Gate-Source Charge
VDS=10V,ID=5A,VGS=4.5V
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
IS
VGS=0V,IS=1A
1.2
1
V
A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2312
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
toff
tf
Vdd
td(on)
td(off)
Rl
90%
90%
Vin
D
Vout
VOUT
INVERTED
Vgs
10%
90%
Rgen
10%
50%
G
VIN
50%
S
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Figure 1: Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF2312
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Dimensions in Millimeters
Symbol
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
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