GDSSF2418EB [GOOD-ARK]
High Power and current handling capability;
| 型号： | GDSSF2418EB |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | High Power and current handling capability |
| 文件： | 总4页 (文件大小：507K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DESCRIPTION
The SSF2418EB uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 0.5V. This
device is suitable for use as a load switch. It is ESD
protected.
GENERAL FEATURES
● VDS = 20V,ID =6A
Schematic diagram
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4.0V
RDS(ON) < 21mΩ @ VGS=4.5V
ESD Rating：2500V HBM
Marking and pin Assignment
● High Power and current handling capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
SOT23-6 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
2418EB
SSF2418EB
SOT23-6
Ø330mm
12mm
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
±12
6
VGS
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
30
A
IDM
Maximum Power Dissipation
1.3
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
95
℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±10V,VDS=0V
20
V
1
μA
uA
IGSS
±10
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=6A
VGS=4.0V, ID=5.5A
VGS=3.1V, ID=5A
VGS=2.5V, ID=4A
VDS=5V,ID=6A
0.5
18
19
21
25
7
1
V
21
22
26
30
mΩ
mΩ
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
650
170
150
PF
PF
PF
VDS=10V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
20
50
64
40
8
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
VDD=10V,ID=1A
VGS=4.5V,RGEN=10Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=10V,ID=6A,
VGS=4.5V
Gate-Source Charge
1.5
2
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
0.76
1.1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
Vin
D
Vout
Vgs
Rgen
G
S
Figure 2:Switching Waveform
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
Suzhou Goodark Electronics Co., Ltd
Version 1.0
SOT23-6 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
NOTES：
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
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