GDSSF3611E_15 [GOOD-ARK]
Main Product Characteristics;型号: | GDSSF3611E_15 |
厂家: | GOOD-ARK ELECTRONICS |
描述: | Main Product Characteristics |
文件: | 总5页 (文件大小:353K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GDSSF3611E
Main Product Characteristics:
VDSS -30 V
RDS(on) 10.6 mΩ(typ.)
ID -12A
Markingandpin
Assignment
Schematicdiagram
Features and Benefits:
AdvancedtrenchMOSFETprocesstechnology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitchingandreversebodyrecovery
150℃operatingtemperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficientandreliabledeviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Parameter
Max.
-12
Units
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
-7.4
A
-48
PD @TC = 25°C
VDS
Power Dissipation③
2
W
V
Drain-Source Voltage
-30
VGS
Gate-to-Source Voltage
± 20
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Symbol
Characterizes
Junction-to-ambient (t ≤ 10s) ④
Typ.
Max.
Units
RθJA
—
62.5
℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GD
SSF3611E
Electrical Characterizes @TA=25℃unless otherwise specified
Symbol Parameter
Min.
-30
—
—
1
Typ.
—
Max.
—
13
16
2
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS =-10.0V, ID =-10.0A
VGS =-4.50V, ID =-7.50A
VDS = VGS, ID = 250μA
VDS = -30V,VGS = 0V
VGS = 20V
10.6
14.1
—
RDS(on)
Static Drain-to-Source on-resistance
mΩ
VGS(th)
IDSS
Gate threshold voltage
V
Drain-to-Source leakage current
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-1
μA
—
10
-10
—
—
—
—
—
—
—
—
—
—
IGSS
Gate-to-Source forward leakage
μA
nC
—
VGS = -20V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
55
ID = -10A,
Qgs
Qgd
td(on)
tr
3.5
18
VDS=-25V,
VGS = -10V
8.0
5.8
56
VGS=-10V, VDS=-15V,
RL=15Ω,
ns
td(off)
tf
Turn-Off delay time
Fall time
RGEN=3Ω
38
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
3224
459
425
VGS = 0V
VDS = -15V
ƒ = 1MHz
pF
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symbol
showing the
IS
—
—
-12
A
integral reverse
Pulsed Source Current
(Body Diode)
ISM
—
—
-48
A
p-n junction diode.
IS=-2.1A, VGS=0V
TJ = 25°C, IF =-10A, di/dt =
100A/μs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
-0.73
16
-1.2
—
V
ns
uC
Qrr
5.9
—
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF3611E
Test circuits and Waveforms
Switch time test circuit:
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
⑥ The maximum current rating is limited by bond-wires.
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GDSSF3611E
Mechanical Data:
SOP8 PACKAGE OUTLINE DIMENSION
Dimension In Millimeters
Dimension In Inches
Symbol
Min
1.350
0.100
1.280
Max
1.750
0.250
1.480
Min
0.053
0.004
0.050
Max
0.069
0.010
0.058
A
A1
A2
b
0.406
0.016
c
D
0.173
4.800
3.800
5.800
0.233
5.000
4.000
6.200
0.007
0.189
0.150
0.228
0.009
0.197
0.157
0.244
E
E1
e
1.27TYP
0.050TYP
L
0.400
1.250
0.016
0.050
Suzhou Goodark Electronics Co., Ltd
Version 1.0
GD
SSF3611E
Ordering and Marking Information
Device Marking: SSF3611E
Package (Available)
SOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tapes/Inner
Units/Inner Inner
Units/Carton
Type
Tape
Box
Box
Boxes/Carton Box
Box
SOP-8
2500
2
5000
8
40000
Suzhou Goodark Electronics Co., Ltd
Version 1.0
相关型号:
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