SES5VN1006-2B [GOOD-ARK]
Ultra Small ESD Protector; 超小型ESD保护型号: | SES5VN1006-2B |
厂家: | GOOD-ARK ELECTRONICS |
描述: | Ultra Small ESD Protector |
文件: | 总4页 (文件大小:141K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SES Series
Ultra Small ESD Protector
SES5VN1006-2B
ROHS
Description
The SES5VN1006-2B ESD protector is designed to replace multilayer
varistors (MLVs) in portable applications such as cell phones,
notebook computers, and PDA’s. They feature large cross-sectional
area junctions for conducting high transient currents, offer desirable
electrical characteristics for board level protection, such as fast
response time, lower operating voltage, lower clamping voltage and no
device degradation when compared to MLVs. The SES5VN1006-2B
protects sensitive semiconductor components from damage or upset
due to electrostatic discharge (ESD) and other voltage induced
transient events. The SES5VN1006-2B is available in a DFN-2
package with working voltages of 5 volt. It gives designer the flexibility
to protect one bidirectional line in applications where arrays are not
practical. Additionally, it may be “sprinkled” around the board in
applications where board space is at a premium. It may be used to
meet the ESD immunity requirements of IEC 61000-4-2, Level 4
(±15kV air, ±8kV contact discharge)
Feature
120 Watts peak pulse power (tp = 8/20μs)
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
Small package for use in portable electronics
Suitable replacement for MLVs in ESD protection applications
Protect one I/O or power line
Low clamping voltage
Stand off voltages: 5V
Low leakage current
Solid-state silicon-avalanche technology
Small Body Outline Dimensions: 1.0mm×0.6mm×0.5mm
Equivalent to 0402 package
Applications
Cell Phone Handsets and Accessories
Personal Digital Assistants (PDA’s)
Notebooks, Desktops, and Servers
Portable Instrumentation
Cordless Phones
Digital Cameras
Peripherals
MP3 Players
Ultra Small ESD Protector
1
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SE**** Series
ESD Protector
SEP2V8-4ULVC
ROHS
Electrical characteristics @25℃(unless otherwise specified)
Parameter
Working Voltage
Symbol
Conditions
Min.
Typ.
Max.
5
Units
V
VRWM
VBR
IR
Breakdown voltage
Reverse Leakage Current
Resistance
It =1mA
6.0
6.8
8.0
0.1
V
VRWM =3V T=25℃
μA
Ω
Rd
0.65
22
Junction Capacitance
Cj
VR=0V f = 1MHz
pF
Absolute maximum rating @25℃
Rating
Peak Pulse Power ( tP = 8/20μS )
Repetitive peak pulse current ( tP = 8/20μS )
Junction temperature
Symbol
Value
Units
Ppk
Ipp
140
9
W
A
Tj
125
℃
℃
℃
℃
Lead Soldering Temperature
Operating Temperature
TL
260 (10 sec)
-40 to +125
-55 to +150
TJ
Storage Temperature
TSTG
Typical Characteristics
Product dimension and foot print
Ultra Small ESD Protector
2
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SES Series
Ultra Small ESD Protector
SES5VN1006-2B
ROHS
Product dimension and foot print
Top VieW
Side View
Common Dimensions (mm)
X1: Extreme thin
PKG.
Ref.
A
Min.
0.4
Nom.
-
Max
0.5
A1
A3
D
0.00
-
0.05
0.125 Ref.
1.00
Bottom View
0.95
0.55
0.20
0.45
1.05
0.65
0.30
0.55
E
0.60
B
0.25
L
0.50
e
0.65 BSC
Ultra Small ESD Protector
3
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SES Series
TVS for Surge Protection
SES5VT323
ROHS
Revision History
Revision
Date
Changes
1.0
2008-7-3
-
Ultra Small ESD Protector
4
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