SSF1030B [GOOD-ARK]

Power Field-Effect Transistor, 7A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SOP-8;


型号：	SSF1030B
厂家：	GOOD-ARK ELECTRONICS
描述：	Power Field-Effect Transistor, 7A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SOP-8 开关脉冲光电二极管晶体管
文件：	总4页 (文件大小：536K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSF1030B

100V N-Channel MOSFET

FEATURES



Advanced trench process technology

ID =7A

Ultra low Rdson, typical 25mohm

High avalanche energy, 100% test

Fully characterized avalanche voltage and current

Lead free product

BV=100V

R _{DS (ON)}=25mΩ（typ.）

DESCRIPTION

The SSF1030B is a new generation of middle voltage and

high current N–Channel enhancement mode trench power

MOSFET. This new technology increases the device reliability

and electrical parameter repeatability. SSF1030B is

assembled in high reliability and qualified assembly house.

APPLICATIONS



Power switching application

SOP-8 Top View

Marking and Pin Assignment

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@T_c=25ْC Continuous drain current,VGS@10V

I_D@T_c=100Cْ Continuous drain current,VGS@10V

5.0

I_DM

Pulsed drain current ①

P_D@T_C=25ْC Power dissipation

8.8

±20

V_GS

E_AS

E_AR

Gate-to-Source voltage

Single pulse avalanche energy

Repetitive avalanche energy

②

TBD

T_J

Operating Junction and

–55 to +175

Cْ

T_STG

Storage Temperature Range

Thermal Resistance

Parameter

Junction-to-case

Junction-to-ambient

Min.

—

Typ.

Max.

Units

—

R_θJC

R_θJA

Cْ /W

—

Electrical Characteristics @T_J=25 Cْ (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Test Conditions

V_GS=0V,I_D=250μA

V_GS=10V,I_D=10A

V_DS=V_GS,I_D=250μA

V_DS=15V,I_D=6.9A

V_DS=100V,V_GS=0V

V_DS=100V,

Drain-to-Source breakdown voltage

Static Drain-to-Source on-resistance

Gate threshold voltage

100

—

3.1

—

4.0

—

mΩ

BV_DSS

R_DS(on)

V_GS(th)

g_fs

2.0

—

Forward transconductance

—

I_DSS

Drain-to-Source leakage current

μA

—

V_GS=0V,T_J=150ْC

V_GS=20V

I_GSS

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—

100

Gate-to-Source forward leakage

Page 1 of 4

Rev.1.1

SSF1030B

100V N-Channel MOSFET

—

-100

—

Gate-to-Source reverse leakage

Total gate charge

V_GS=-20V

I_D=6.9A

Q_g

Q_gs

Q_gd

t_d(on)

t_r

V_DD=30V

V_GS=10V

Gate-to-Source charge

Gate-to-Drain("Miller") charge

Turn-on delay time

Rise time

14.6

14.2

V_DD=30V

I_D=2A ,R_L=15Ω

R_G=2.5Ω

7.3

14.8

190

135

4.2

t_d(off)

t_f

Turn-Off delay time

Fall time

V_GS=10V

V_GS=0V

V_DS=25V

f=1.0MHZ

C_iss

C_oss

C_rss

Input capacitance

Output capacitance

Reverse transfer capacitance

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min.

Typ.

Max.

Units

Test Conditions

MOSFET symbol

showing the

I_S

—

integral reverse

p-n junction diode.

Pulsed Source Current

I_SM

—

(Body Diode)

①

V_SD

t_rr

—

－

—

1.3

—

T_J=25ْC,I_S=30A,V_GS=0V ③

T_J=25ْC,I_F=3.1A

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-on Time

di/dt=100A/μs ③

Q_rr

t_on

107

—

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

① Repetitive rating; pulse width limited by max junction temperature.

② Test condition: L =0.3mH, ID = 15A, VDD = 50V.

③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting T_J= 25°C.

EAS test circuit

Gate charge test circuit

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Page 2 of 4

Rev.1.1

SSF1030B

100V N-Channel MOSFET

Switch Time Test Circuit

Switch Waveforms

Transient Thermal Impedance Curve

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Page 3 of 4

Rev.1.1

SSF1030B

100V N-Channel MOSFET

SOP-8 PACKAGE INFORMATION

NOTES：

1. Dimensions are inclusive of plating

2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.

3. Dimension L is measured in gauge plane.

4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

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Page 4 of 4

Rev.1.1

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