SSF104 [GWSEMI]

Rectifier Diode,;


型号：	SSF104
厂家：	Goodwork Semiconductor Co., Ltd .
描述：	Rectifier Diode,
文件：	总2页 (文件大小：62K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSF101 THRU SSF107

1.0 AMP SURFACE MOUNT FAST RECOVERY RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

CURRENT

1.0 Ampere

FEATURES

* Ideal for surface mount applications

* Easy pick and place

.106(2.7)

.098(2.5)

* Built-in strain relief

* Fast switching speed

.051(1.3)

.043(1.1)

MECHANICAL DATA

.144(3.65)

.136(3.45)

* Case: Molded plastic

.007(0.17)

.005(0.13)

* Epoxy: UL 94V-0 rate flame retardant

* Metallurgically bonded construction

* Polarity: Color band denotes cathode end

* Mounting position: Any

.037(0.95)

.033(0.85)

.067(1.7)

.059(1.5)

.033(0.85)

.022(0.55)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SSF101 SSF102 SSF103 SSF104 SSF105 SSF106 SSF107 UNITS

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

at Ta=25 C

1.0

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

1.3

5.0

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

100

Maximum Reverse Recovery Time (Note 1)

150

250

500

Typical Junction Capacitance (Note 2)

C/W

Typical Thermal Resistance RqJA (Note 3)

Operating and Storage Temperature Range TJ, TSTG

-65 +150

F11

F12

F13

F14

F15

F16

F17

Marking Code

NOTES:

1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

3. Thermal Resistance from Junction to Ambient.

RATINGAND CHARACTERISTIC CURVES (SSF101 THRU SSF107)

FIG.1-TYPICAL FORWARD

CHARACTERISTICS

FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE

1.2

1.0

0.8

0.6

3.0

1.0

Single Phase

Half Wave 60Hz

Resistive Or Inductive Load

0.4

0.2

100

120

140

160

180

200

Tj=25 C

AMBIENT TEMPERATURE ( C)

Pulse Width 300us

1% Duty Cycle

0.1

FIG.4-MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

.01

.8 1.0 1.2 1.4 1.6 1.8 2.0

FORWARD VOLTAGE,(V)

FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE

RECOVERY TIME CHARACTERISTICS

8.3ms Single Half

Tj=25 C

Sine Wave

50W

10W

NONINDUCTIVE

JEDEC method

(

)

(+)

D.U.T.

25Vdc

PULSE

GENERATOR

(NOTE 2)

(approx.)

100

(

)

(+)

NUMBER OF CYCLES AT 60Hz

OSCILLISCOPE

(NOTE 1)

NON-

INDUCTIVE

NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.

2. Rise Time= 10ns max., Source Impedance= 50 ohms.

FIG.5-TYPICAL JUNCTION CAPACITANCE

trr

+0.5A

-0.25A

-1.0A

.01

.05

100

1cm

SET TIME BASE FOR

50 / 10ns / cm

REVERSE VOLTAGE,(V)