SSF1090 [GOOD-ARK]
Power Field-Effect Transistor, 15A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN;
| 型号： | SSF1090 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | Power Field-Effect Transistor, 15A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN 局域网 二极管 |
| 文件： | 总5页 (文件大小：1050K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF1090
100V N-Channel MOSFET
FEATURES
ID =15A
Advanced trench process technology
BV=100V
Special designed for Convertors and power controls
High density cell design for ultra low R DS (ON)
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
R DS (ON) =0.06Ω (Typ.)
Lead free product
DESCRIPTION
The SSF1090 is a new generation of high voltage and low current
N–Channel enhancement mode trench power MOSFET. This new
technology increases the device reliability and electrical parameter
repeatability. SSF1090 is assembled in high reliability and qualified
assembly house.
APPLICATIONS
Power switching application
SSF1090 Top View (TO-220)
Absolute Maximum Ratings
Parameter
Max.
15
Units
ID@Tc=25ْC Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V
A
10
60
IDM
Pulsed drain current
Power dissipation
①
42
W
W/ْC
V
PD@TC=25ْC
0.4
±20
240
TBD
28
Linear derating factor
VGS
EAS
EAR
dv/dt
TJ
Gate-to-Source voltage
Single pulse avalanche energy
Repetitive avalanche energy
Peak diode recovery voltage
Operating Junction and
②
mJ
mJ
v/ns
–55 to +175
Cْ
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Junction-to-case
Junction-to-ambient
Min.
—
Typ.
3.6
—
Max.
—
Units
RθJC
RθJA
C/W
—
69
*When mounted on the minimum pas size recommended（PCB Mount）
Electrical Characteristics @TJ=25 Cْ (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BVDSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
VGS(th) Gate threshold voltage
100
—
—
—
V
Ω
V
VGS=0V,ID=250μA
VGS=10V,ID=2A
0.06 0.09
2.0
—
—
—
—
—
4.0
1
VDS=VGS,ID=250μA
VDS=30V,VGS=0V
IDSS Drain-to-Source leakage current
IGSS Gate-to-Source forward leakage
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μA
nA
—
10
100
VDS=100V, VGS=0V,TJ=150ْC
VGS=20V
—
Page 1 of 5
Rev.2.1
SSF1090
100V N-Channel MOSFET
Gate-to-Source reverse leakage
Qg Total gate charge
—
—
—
—
—
21.18
4.7
-100
VGS=-20V
ID=9.2A,VGS=10V
VDD=80V,RL=8.6Ω
Qgs Gate-to-Source charge
Qgd Gate-to-Drain("Miller") charge
td(on) Turn-on delay time
—
—
nC
8.5
—
—
—
—
—
—
—
10
9.5
VDD=50V
ID=9.2A ,RL=5.4Ω
RG=18Ω
tr
td(off) Turn-Off delay time
tf Fall time
Rise time
nS
pF
18.3
4.2
VGS=10V
Ciss Input capacitance
697 750
VGS=0V
VDS=25V
f=1.0MHZ
Coss Output capacitance
59
43
110
45
Crss Reverse transfer capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Test Conditions
MOSFET symbol
showing the
IS
—
—
—
3
A
integral reverse
Pulsed
Source
Current
ISM
—
18
p-n junction diode.
(Body Diode)
①
VSD Diode Forward Voltage
trr Reverse Recovery Time
—
—
—
—
35
1.3
—
V
TJ=25ْC,IS=3A,VGS=0V ③
TJ=25ْC,IF=9.2A
nS
μC
di/dt=100A/μs ③
Qrr Reverse Recovery Charge
ton Forward Turn-on Time
67.2
—
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =30mH, VDD = 50V, Id=4A.
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS Test Circuit
Gate Charge Test Circuit
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Page 2 of 5
Rev.2.1
SSF1090
100V N-Channel MOSFET
Switch Time Test Circuit
Switch Waveform
Gate Charge
Source-Drain Diode Forward Voltage
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
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Page 3 of 5
Rev.2.1
SSF1090
100V N-Channel MOSFET
Safe Operation Area
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
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Page 4 of 5
Rev.2.1
SSF1090
100V N-Channel MOSFET
TO220 MECHANICAL DATA
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Page 5 of 5
Rev.2.1
相关型号：
SSF1090A
Power Field-Effect Transistor, 15A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3/2
GOOD-ARK
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