SSF1504D [GOOD-ARK]
150V N-Channel MOSFET;
| 型号： | SSF1504D |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 150V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：1121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF1504D
150V N-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
ID
150V
0.3Ω(typ)
6A
MarkingandPin
Assignment
SchematicDiagram
DPAK
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
175℃operating temperature
Leadfreeproduct
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
6
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
A
4
20
24
W
W/°C
V
Power Dissipation③
PD @TC = 25°C
Linear Derating Factor
0.16
VDS
Drain-Source Voltage
150
VGS
Gate-to-Source Voltage
± 20
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
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Page 1 of 7
Rev.2.1
SSF1504D
150V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
—
Max.
6.25
100
71
Units
℃/W
℃/W
℃/W
RθJC
Junction-to-case③
—
Junction-to-Ambient (t ≤ 10s) ④
Junction-to-Ambient (PCB mounted, steady-state) ④
RθJA
—
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
150
Typ.
Max.
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=10V,ID = 3A
TJ = 125℃
—
—
2
0.3
0.35
—
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source on-resistance
Gate threshold voltage
Ω
V
0.7
—
4
VDS = VGS, ID = 250μA
TJ = 125℃
—
—
—
2.8
—
—
1
VDS = 150,Vgs=10V
TJ = 125°C
Drain-to-Source leakage current
μA
nA
—
50
100
Gate-to-Source forward leakage
Gate-to-Source reverse leakage
Total gate charge
VGS =20V
IGSS
-
20
4
VGS = -20V
-100
Qg
ID = 6A
nC
ns
VDD=120V
Qgs
Qgd
td(on)
tr
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
V
GS = 10V
7
17
32
80
36
759
94
53
VGS=10V, VDD=24.6V,
RL=8.2Ω,
Rise time
RGEN=2.55Ω
td(off)
tf
Turn-Off delay time
ID=3.00A
Fall time
Ciss
Coss
Crss
Input capacitance
VGS = 0V
pF
VDS = 25V
ƒ = 800KHz
Output capacitance
Reverse transfer capacitance
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symb
showing the
IS
—
—
6
A
integral reverse
Pulsed Source Current
(Body Diode)
ISM
—
—
24
A
p-n junction diode.
IS=6.00A, VGS=0V,TJ= 25°C
TJ = 25°C, IF =6.00A, di/dt =
25.0A/μs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
0.82
90
1.5
V
ns
nC
Qrr
105
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Page 2 of 7
Rev.2.1
SSF1504D
150V N-Channel MOSFET
Test Circuits and Waveforms
aveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 3 of 7
Rev.2.1
SSF1504D
150V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.2.1
SSF1504D
150V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.2.1
SSF1504D
150V N-Channel MOSFET
Mechanical Data
DPAK PACKAGE OUTLINE DIMENSION_CD
Dimension In Millimeters
Dimension In Inches
Symbol
Min
2.200
0.910
0.710
5.130
0.460
6.000
Nom
2.300
1.010
0.760
5.330
Max
2.380
1.110
0.810
5.460
0.560
6.200
Min
0.087
0.036
0.028
0.202
0.018
0.236
Nom
0.091
0.040
0.030
0.210
Max
0.094
0.044
0.032
0.215
0.022
0.244
A
A1
B
B1
C
0.510
6.100
0.020
0.240
D
5.350 (REF)
2.900 (REF)
6.600
0.211 (REF)
0.114 (REF)
0.260
D1
D2
E
6.500
6.700
0.256
0.264
4.83 (REF)
2.286
10.100
0.190 (REF)
0.090
0.398
E1
e
H
2.186
9.800
1.400
2.386
10.400
1.700
0.086
0.386
0.055
0.094
0.409
0.067
F
K
1.500
1.600 (REF)
80 (REF)
0.059
0.063 (REF)
80 (REF)
V2
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Page 6 of 7
Rev.2.1
SSF1504D
150V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF1504D
Package (Available)
DPAK
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Packag Units/Tu Tubes/Inner
Units/Inner Inner
Units/Carton
e Type be
Box
Box
Boxes/Carton Box
Box
DPAK
80
50
4000
10
40000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 175℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃ or 175℃ @
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
100% of Max VGSS
Bias(HTGB)
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Page 7 of 7
Rev.2.1
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