SSF2306 [GOOD-ARK]
30V N-Channel MOSFET;
| 型号： | SSF2306 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总4页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2306
30V N-Channel MOSFET
D
DESCRIPTION
The SSF2306 uses advanced trench
technology to provide excellent RDS(ON)
,
G
low gate charge and operation with gate
voltages as low as 2.5V.
S
GENERAL FEATURES
● VDS = 30V,ID = 5A
Schematic Diagram
RDS(ON) < 50mΩ @ VGS=2.5V
RDS(ON) < 35mΩ @ VGS=4.5V
RDS(ON) < 30mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
D
3
APPLICATIONS
●Battery protection
●Load switch
23 0 6
G
S
2
1
●Power management
SOT-23 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
2306
SSF2306
SOT-23
Ø180mm
8 mm
3000 units
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
30
±12
V
V
VDS
VGS
5
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
20
A
IDM
Maximum Power Dissipation
1.38
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90
℃/W
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Page 1 of 4
Rev.1.0
SSF2306
30V N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
VGS=±12V,VDS=0V
30
V
1
μA
nA
IGSS
±100
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=2.5V, ID=2.6A
VGS=4.5V, ID=5A
VGS=10V, ID=5A
VDS=5V,ID=5A
0.5
1.2
50
35
30
V
mΩ
mΩ
mΩ
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
13
Clss
Coss
Crss
660
90
1050
PF
PF
PF
VDS=25V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
70
td(on)
tr
td(off)
tf
6
nS
nS
nS
nS
nC
nC
nC
VDS=15V,ID=5A
VGS=10V,RGEN=3.3Ω
RD=3Ω
Turn-on Rise Time
20
20
3
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
8.5
1.5
3.2
15
VDS=16V,ID=5A,VGS=4.5V
VGS=0V,IS=1.2A
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.0
SSF2306
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
Vdd
toff
tr
tf
td(on)
VOUT
VIN
td(off)
Rl
Vin
90%
D
Vout
90%
Vgs
INVERTED
Rgen
G
10%
90%
10%
50%
S
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Figure 1: Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedanc
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Page 3 of 4
Rev.1.0
SSF2306
30V N-Channel MOSFET
SOT-23 PACKAGE INFORMATION
Dimensions in Millimeters (UNIT:mm)
Dimensions in Millimeters
Symbol
MIN.
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
MAX.
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
A
A1
A2
b
c
D
E
E1
e
0.950TYP
0.550REF
e1
L
1.800
2.000
L1
θ
0.300
0°
0.500
8°
NOTES
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.0
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