SSF2316E [GOOD-ARK]
20V Dual N-Channel MOSFET;
| 型号： | SSF2316E |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 20V Dual N-Channel MOSFET |
| 文件： | 总4页 (文件大小：321K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2316E
20V Dual N-Channel MOSFET
GENERAL FEATURES
● VDS = 20V,ID = 7A
R
DS(ON) < 35mΩ @ VGS=2.5V
RDS(ON) < 30mΩ @ VGS=3.1V
RDS(ON) < 24mΩ @ VGS=4V
RDS(ON) < 23mΩ @ VGS=4.5V
Schematic Diagram
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product
● Surface Mount Package
DFN3×3-8L Bottom View
APPLICATIONS
●Battery protection
●Load switch
●Power management
Pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
DFN3×3-8L
2316E
SSF2316E
-
-
-
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
VDS
±12
7
VGS
A
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
40
A
IDM
Maximum Power Dissipation
1.4
W
℃
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
83
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
℃/W
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Page 1 of 4
Rev. 1.0
SSF2316E
20V Dual N-Channel MOSFET
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Symbol
Condition
Min Typ
Max
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
VGS=±8V,VDS=0V
20
V
1
μA
μA
IGSS
±10
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=4.5V, ID=4A
VGS=4V, ID=4A
0.5
17
18
20
24
11
1.3
23
24
30
35
V
mΩ
mΩ
mΩ
mΩ
S
Drain-Source On-State Resistance
VGS=3.1V, ID=4A
VGS=2.5V, ID=2A
VDS=10V,ID=3.5A
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
Coss
Crss
900
350
150
PF
PF
PF
VDS=8V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
td(on)
tr
td(off)
tf
15
100
60
90
20
2.5
3
nS
nS
nS
nS
nC
nC
nC
Turn-on Rise Time
V
DD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
VDS=10V,ID=7A,
VGS=4.5V
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=7A
0.83
1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev. 1.0
SSF2316E
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
tr
toff
tf
td(on)
td(off)
Vdd
90%
90%
Rl
Vin
VOUT
INVERTED
D
Vout
10%
10%
50%
Vgs
Rgen
90%
50%
G
VIN
S
10%
PULSE WIDTH
Figure 2: Switching Waveforms
Figure 1:Switching Test Circuit
Square Wave Pluse Duration(sec)
Figure 3 Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev. 1.0
SSF2316E
20V Dual N-Channel MOSFET
DFN3×3-8L PACKAGE INFORMATION
TOP VIEW
BOTTOM VIEW
COMMON DIMENSIONS(MM)
PKG.
W： VERY VERY THIN
REF.
A
MIN.
NOM.
0.75
MAX.
0.70
0.00
0.80
0.05
A1
A3
D
－
0.2REF.
3.00
2.95
2.95
0.25
0.30
2.30
2.50
3.05
3.05
0.35
0.50
2.55
1.75
E
3.00
b
0.30
L
0.40
D2
E2
2.45
SIDE VIEW
1.65
e
0.65BSC
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact
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Page 4 of 4
Rev. 1.0
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