SSF2341E [GOOD-ARK]
20V P-Channel MOSFET;
| 型号： | SSF2341E |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 20V P-Channel MOSFET |
| 文件： | 总7页 (文件大小：1099K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2341E
20V P-Channel MOSFET
Main Product Characteristics
VDSS
RDS(on)
ID
-20V
37mΩ (typ.)
-4A
①
MarkingandPin
Assignment
SOT-23
SchematicDiagram
Features and Benefits
AdvancedMOSFETprocesstechnology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
150℃operating temperature
Leadfreeproduct
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
devicefor useinpower switching applicationandawidevarietyof other applications.
Absolute Max Rating @TA=25℃ unless otherwise specified
Symbol
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Parameter
Max.
-4 ①
Units
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
A
-2.4 ①
-30
PD @TC = 25°C
VDS
Power Dissipation ③
1.4
W
V
Drain-Source Voltage
-20
VGS
Gate-to-Source Voltage
± 8
V
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
90
°C /W
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Page 1 of 7
Rev.1.1
SSF2341E
20V P-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
-20
—
Typ.
—
Max.
—
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = -250μA
VGS=-4.5V,ID = -4A
VGS=-2.5V,ID = -4A
VGS=-1.8V,ID = -2A
VDS = VGS, ID = -250μA
TJ = 125°C
37
43
54
73
-1.0
—
RDS(on)
Static Drain-to-Source on-resistance
mΩ
—
45
—
56
-0.3
—
—
VGS(th)
Gate threshold voltage
V
-0.44
—
—
-1
VDS = -16V,VGS = 0V
TJ = 125°C
IDSS
Drain-to-Source leakage current
Gate-to-Source forward leakage
μA
μA
—
—
-50
10
-10
—
—
—
VGS =8V
IGSS
—
—
VGS = -8V
Qg
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
—
ID = -4A,
10
nC
ns
VDS=-10V,
Qgs
Qgd
td(on)
tr
—
—
0.77
3.5
10
VGS = -4.5V
—
—
—
—
—
—
VGS=-4.5V, VDS =-10V,
8.6
29
RGEN=3Ω，
td(off)
tf
Turn-Off delay time
Fall time
—
—
—
—
13
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
—
—
VGS = 0V,
VDS =-10V,
ƒ = 1MHz
939
130
111
pF
—
—
—
—
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
Conditions
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
IS
—
—
-4 ①
A
integral reverse
p-n junction diode.
IS=1A, VGS=0V
TJ = 25°C, IF =-4A,
di/dt = 100A/μs
Pulsed Source Current
(Body Diode)
ISM
—
—
-30
A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
-0.76
8.7
-1.0
—
V
ns
nC
Qrr
2.3
—
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Page 2 of 7
Rev.1.1
SSF2341E
20V P-Channel MOSFET
Test Circuits and Waveforms
Gate charge test circuit:
EAS test circuit:
Switching time test circuit:
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 7
Rev.1.1
SSF2341E
20V P-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Rev.1.1
SSF2341E
20V P-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance Junction-to-Case
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Page 5 of 7
Rev.1.1
SSF2341E
20V P-Channel MOSFET
Mechanical Data
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Page 6 of 7
Rev.1.1
SSF2341E
20V P-Channel MOSFET
Ordering and Marking Information
Device Marking: 2341E
Package (Available)
SOT-23
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tapes/Inner Units/Inner Inner
Units/Carton
Type
Tape Box
Box
Boxes/Carton Box
Box
SOT23
3000
10
30000
4
120000
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃@ 100% of
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
Max VGSS
Bias(HTGB)
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Page 7 of 7
Rev.1.1
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