SSF2418E [GOOD-ARK]
20V Dual N-Channel MOSFET;
| 型号： | SSF2418E |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 20V Dual N-Channel MOSFET |
| 文件： | 总6页 (文件大小：553K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF2418E
20V Dual N-Channel MOSFET
Main Product Characteristics
VDSS 20V
RDS(on) 18mohm(typ.)
ID 6A
MarkingandPin
Assignment
SOT23-6
SchematicDiagram
Features and Benefits
AdvancedtrenchMOSFETprocess technology
Special designed for PWM, load switching and
generalpurposeapplications
Ultralowon-resistancewithlowgatecharge
Fastswitching andreversebodyrecovery
150℃operating temperature
Leadfreeproduct
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
Parameter
Max.
Units
6
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
A
30
PD @TC = 25°C
VDS
1.3
W
V
Power Dissipation③
Drain-Source Voltage
20
± 12
VGS
Gate-to-Source Voltage
V
ESD
ESD Rating (HBM)
2
KV
°C
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to +150
Thermal Resistance
Symbol
Characteristics
Junction-to-ambient (t ≤ 10s) ④
Typ.
Max.
Units
RθJA
—
95
℃/W
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Page 1 of 6
Rev.1.4
SSF2418E
20V Dual N-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol Parameter
Min.
20
—
—
—
—
0.5
—
—
-10
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
21
22
26
30
1
Units
Conditions
V(BR)DSS Drain-to-Source breakdown voltage
V
VGS = 0V, ID = 250μA
VGS=4.5V,ID = 6A
VGS=4V,ID = 5.5A
VGS=3.1V,ID = 5A
VGS=2.5V,ID = 4A
VDS = VGS, ID = 250μA
VDS = 20V,VGS = 0V
VGS =10V
18
19
21
25
—
RDS(on)
Static Drain-to-Source on-resistance
mΩ
VGS(th)
IDSS
Gate threshold voltage
V
Drain-to-Source leakage current
—
1
μA
—
10
—
—
—
—
—
—
—
—
—
—
—
—
IGSS
Gate-to-Source forward leakage
μA
S
—
VGS = -10V
gFS
Qg
Forward Transconductance
Total gate charge
7
VDS=5V,ID=6A
VDS=10V,
8
nC
ID=6A,
Qgs
Qgd
td(on)
tr
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
1.5
2
VGS=4.5V
20
50
64
40
650
170
150
VDD=10V,ID=1A
ns
VGS=4.5V,RGEN=10Ω
td(off)
tf
Turn-Off delay time
Fall time
Ciss
Coss
Crss
Input capacitance
VGS = 0V
pF
VDS = 10V
ƒ = 1.0MHz
Output capacitance
Reverse transfer capacitance
Source-Drain Ratings and Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Conditions
MOSFET symb
showing the
IS
—
—
6
A
integral reverse
p-n junction diode.
IS=1A, VGS=0V
Pulsed Source Current
(Body Diode)
ISM
VSD
—
—
—
30
A
V
Diode Forward Voltage
0.76
1.1
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Page 2 of 6
Rev.1.0
SSF2418E
20V Dual N-Channel MOSFET
Test Circuits and Waveforms
aveforms:
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Page 3 of 6
Rev.1.0
SSF2418E
20V Dual N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Square Wave Pluse Duration(sec)
Figure 1 Normalized Maximum Transient Thermal Impedance
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 4 of 6
Rev.1.0
SSF2418E
20V Dual N-Channel MOSFET
Mechanical Data
Dimension In Millimeters
Dimension In Inches
Symbol
Min
Max
Min
Max
A
A1
A2
b
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
c
D
E
E1
e
0.95(BSC)
0.037(BSC)
e1
L
1.800
0.300
00
2.000
0.600
80
0.071
0.012
00
0.079
0.024
80
θ
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Page 5 of 6
Rev.1.0
SSF2418E
20V Dual N-Channel MOSFET
Ordering and Marking Information
Device Marking: 2418E
Package (Available)
SOT23-6
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/
Tapes/
Units/
Inner Boxes/
Units/
Type
SOT23-6 3000
Tape
Inner Box
10
Inner Box Carton Box
Carton Box
120000
30000
4
Reliability Test Program
Test Item
High
Conditions
Tj=125℃ to 150℃ @
Duration Sample Size
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Reverse
80% of Max
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃@ 100% of
168 hours
500 hours
1000 hours
3 lots x 77 devices
Temperature
Gate
Max VGSS
Bias(HTGB)
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Page 6 of 6
Rev.1.0
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