SSF3402 [GOOD-ARK]

30V N-Channel MOSFET;


型号：	SSF3402
厂家：	GOOD-ARK ELECTRONICS
描述：	30V N-Channel MOSFET
文件：	总4页 (文件大小：341K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSF3402

30V N-Channel MOSFET

DESCRIPTION

The SSF3402 uses advanced trench

technology to provide excellent R_DS(ON)

low gate charge and operation with gate

voltages as low as 2.5V.

Schematic Diagram

GENERAL FEATURES

● V_DS= 30V,I_D= 5A

R_DS(ON)< 30mΩ @ V_GS=10V

R_DS(ON)< 48mΩ @ V_GS=4.5V

● High Power and current handing capability

● Lead free product

● Surface Mount Package

Marking and Pin Assignment

APPLICATIONS

●Battery protection

●Load switch

●Power management

SOT-23 Top View

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

Tape Width

Quantity

3402

SSF3402

SOT-23

Ø180mm

8 mm

3000 units

ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V^DS

V^GS

I_D(25℃)

I_D(70℃)

I_DM

Drain Current-Continuous@ Current-Pulsed (Note 1)

4.3

Maximum Power Dissipation

1.38

-55 To 150

℃

P_D

Operating Junction and Storage Temperature Range

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

℃/W

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Page 1 of 4

Rev.1.0

SSF3402

30V N-Channel MOSFET

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=30V,V_GS=0V

μA

Gate-Body Leakage Current

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

I_GSS

V_GS=±20V,V_DS=0V

±100

V_GS(th)

R_DS(ON)

g_FS

V_DS=V_GS,I_D=250μA

V_GS=4.5V, I_D=4A

1.5

2.5

mΩ

Drain-Source On-State Resistance

V_GS=10V, I_D=5A

Forward Transconductance

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

V_DS=5V,I_D=5A

C_lss

C_oss

C_rss

660

1050

V_DS=25V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t_d(on)

t_r

t_d(off)

t_f

V_DS=15V,I_D=5A

Turn-on Rise Time

V_GS=10V,R_GEN=3.3Ω

Turn-Off Delay Time

R_D=3Ω

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

8.5

1.5

3.2

V_DS=16V,I_D=5A,V_GS=4.5V

Gate-Source Charge

Gate-Drain Charge

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V_SD

V_GS=0V,I_S=1.2A

1.2

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

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Page 2 of 4

Rev.1.0

SSF3402

30V N-Channel MOSFET

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

t_on

Vdd

t_off

t_r

t_f

t_d(on)

V_OUT

V_IN

t_d(off)

Vin

90%

Vout

90%

Vgs

INVERTED

Rgen

10%

90%

10%

50%

10%

PULSE WIDTH

Figure 2: Switching Waveforms

Figure 1: Switching Test Circuit

Square Wave Pluse Duration(sec)

Figure 3: Normalized Maximum Transient Thermal Impedanc

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Page 3 of 4

Rev.1.0

SSF3402

30V N-Channel MOSFET

SOT-23 PACKAGE INFORMATION

Dimensions in Millimeters (UNIT: mm)

Dimensions in Millimeters

Symbol

MIN.

0.900

0.000

0.900

0.300

0.080

2.800

1.200

2.250

MAX.

1.150

0.100

1.050

0.500

0.150

3.000

1.400

2.550

0.950TYP

0.550REF

1.800

2.000

0.300

0°

0.500

8°

NOTES

1. All dimensions are in millimeters.

2. Tolerance ±0.10mm (4 mil) unless otherwise specified

3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.

4. Dimension L is measured in gauge plane.

5. Controlling dimension is millimeter; converted inch dimensions are not necessarily exact.

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Page 4 of 4

Rev.1.0

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