SSF3615 [GOOD-ARK]
30V P-Channel MOSFET;![SSF3615](http://pdffile.icpdf.com/pdf2/p00352/img/icpdf/SSF3615-15_2165429_icpdf.jpg)
型号: | SSF3615 |
厂家: | ![]() |
描述: | 30V P-Channel MOSFET |
文件: | 总6页 (文件大小:775K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SSF3615
30V P-Channel MOSFET
D
DESCRIPTION
The SSF3615 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
G
S
Schematic Diagram
GENERAL FEATURES
● VDS =- 30V,ID =-10A
R
DS(ON) < 25mΩ @ VGS=-4.5V
RDS(ON) < 14mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●PWM applications
●Load switch
●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
2500 units
SSF3615
SSF3615
SOP-8
Ø330mm
12mm
ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted)
Parameter
Symbol
VDS
Limit
-30
±25
-8
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
ID(25℃)
ID(70℃)
IDM
A
Drain Current-Continuous@ Current-Pulsed (Note 1)
-6
A
-80
3.1
A
Maximum Power Dissipation
W
℃
PD
Operating Junction and Storage Temperature Range
-55 To 150
TJ,TSTG
THERMAL CHARACTERISTICS
℃/W
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Symbol
Condition
Min Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
V
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Page 1 of 6
Rev.2.1
SSF3615
30V P-Channel MOSFET
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
IDSS
IGSS
VDS=-30V,VGS=0V
VGS=±25V,VDS=0V
-1
μA
nA
±100
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-7.5A
-1.7
-2.2
20
-3
25
14
V
mΩ
mΩ
S
Drain-Source On-State Resistance
V
GS=-10V, ID=-10A
12
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
VDS=-5V,ID=-10A
18
Clss
Coss
Crss
1200
240
PF
PF
PF
VDS=-15V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
150
td(on)
tr
td(off)
tf
9
8.5
20
8
nS
nS
nS
nS
nC
nC
nC
nS
nC
Turn-on Rise Time
VDS=-15V,VGS=-10V,RGEN=3Ω
ID=1A
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Qg
Qgs
Qgd
Trr
18
5
Gate-Source Charge
VDS=-15V,ID=-10A,VGS=-10V
IF=-10A, dI/dt=100A/µs
VGS=0V,IS=-1A
Gate-Drain Charge
3.5
24
12
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
Qrr
VSD
-0.74
-1
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 6
Rev.2.1
SSF3615
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ton
toff
tr
tf
td(on)
td(off)
90%
90%
VOUT
INVERTED
10%
90%
10%
VIN
50%
50%
10%
PULSE WIDTH
Figure 2:Switching Waveforms
Figure 1:Switching Test Circuit
TJ-Junction Temperature(℃)
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
-ID- Drain Current (A)
-Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
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Page 3 of 6
Rev.2.1
SSF3615
30V P-Channel MOSFET
-Vgs Gate-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
-Vgs Gate-Source Voltage (V)
-Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Figure 9 Rdson vs Vgs
Qg Gate Charge (nC)
-Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
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Page 4 of 6
Rev.2.1
SSF3615
30V P-Channel MOSFET
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
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Page 5 of 6
Rev.2.1
SSF3615
30V P-Channel MOSFET
SOP-8 PACKAGE INFORMATION
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 6 of 6
Rev.2.1
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