SSF6010 [GOOD-ARK]
60V N-Channel MOSFET;
| 型号： | SSF6010 |
| 厂家： | 
GOOD-ARK ELECTRONICS |
| 描述： | 60V N-Channel MOSFET |
| 文件： | 总5页 (文件大小：953K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSF6010
60V N-Channel MOSFET
FEATURES
ID =64A
BV=60V
Advanced trench process technology
avalanche energy, 100% test
RDS(ON)=11mΩ (typ.)
Fully characterized avalanche voltage and current
Lead free product
DESCRIPTION
The SSF6010 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6010 is assembled
in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SSF6010 Top View (TO-220)
Absolute Maximum Ratings
Parameter
Max.
64
Units
ID@Tc=25ْC Continuous drain current,VGS@10V
ID@Tc=100Cْ Continuous drain current,VGS@10V
A
45
IDM
Pulsed drain current
Power dissipation
①
300
144
0.74
±20
220
TBD
W
W/ْC
V
PD@TC=25ْC
Linear derating factor
VGS
EAS
EAR
TJ
Gate-to-Source voltage
Single pulse avalanche energy
Repetitive avalanche energy
Operating Junction and
②
mJ
–55 to +175
Cْ
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Junction-to-case
Junction-to-ambient
Min.
—
Typ.
1.04
—
Max.
—
Units
RθJC
RθJA
Cْ /W
—
62
Electrical Characteristics @TJ=25 Cْ (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BVDSS Drain-to-Source breakdown voltage
RDS(on) Static Drain-to-Source on-resistance
VGS(th) Gate threshold voltage
60
—
—
11
—
13
4.0
—
2
V
mΩ
V
VGS=0V,ID=250μA
VGS=10V,ID=30A
2.0
—
VDS=VGS,ID=250μA
VDS=5V,ID=30A
VDS=60V,VGS=0V
VDS=60V,
gfs Forward transconductance
58
—
S
—
IDSS Drain-to-Source leakage current
μA
nA
—
—
10
VGS=0V,TJ=150ْC
VGS=20V
Gate-to-Source forward leakage
IGSS
—
—
—
—
100
Gate-to-Source reverse leakage
-100
VGS=-20V
www.goodark.com
Page 1 of 5
Rev.2.4
SSF6010
60V N-Channel MOSFET
Total gate charge
—
45
—
ID=30A
VDD=30V
VGS=10V
Qg
nC
Qgs Gate-to-Source charge
Qgd Gate-to-Drain("Miller") charge
td(on) Turn-on delay time
—
—
—
—
—
—
—
—
—
4.2
15
—
—
—
—
—
—
—
—
—
14.6
14.2
40
VDD=30V
ID=2A ,RL=15Ω
RG=2.5Ω
tr
td(off) Turn-Off delay time
tf Fall time
Rise time
nS
pF
VGS=10V
7.3
Ciss Input capacitance
1480
190
135
VGS=0V
VDS=25V
f=1.0MHZ
Coss Output capacitance
Crss Reverse transfer capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min.
Typ.
Max.
Units
Test Conditions
MOSFET symbol
showing the
IS
—
—
—
75
A
integral reverse
Pulsed
Source
Current
ISM
—
300
p-n junction diode.
(Body Diode) ①
VSD Diode Forward Voltage
trr Reverse Recovery Time
—
—
—
—
33
61
1.3
—
V
TJ=25ْC,IS=40A,VGS=0V ③
TJ=25ْC,IF=60A
nS
nC
di/dt=100A/μs ③
Qrr Reverse Recovery Charge
ton Forward Turn-on Time
—
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 30V,Id=37A.
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C.
EAS test circuit
Gate charge test circuit
www.goodark.com
Page 2 of 5
Rev.2.4
SSF6010
60V N-Channel MOSFET
Switch Time Test Circuit
Switch Waveforms
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
Rev.2.4
www.goodark.com
Page 3 of 5
SSF6010
60V N-Channel MOSFET
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
Page 4 of 5
www.goodark.com
Rev.2.4
SSF6010
60V N-Channel MOSFET
TO-220 MECHANICAL DATA
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
A
ФP
ϴ1
D
D2
ФP1
ϴ
ϴ2
D1
b1
b
ϴ4
A1
L
c
E
e
Dimension In Millimeters
Dimension In Inches
Symbol
Min
Nom
1.300
2.400
1.270
1.370
Max
Min
Nom
0.051
0.094
0.050
0.054
0.020
0.614
1.130
0.360
0.394
0.400
0.142
0.059
0.1BSC
0.516
Max
A
A1
b
b1
c
-
-
-
-
2.200
2.600
0.087
0.102
-
-
-
-
1.270
1.470
0.050
0.058
-
-
-
-
0.500
-
-
-
-
-
-
-
-
-
-
-
-
D
15.600
28.700
9.150
10.000
10.160
3.600
D1
D2
E
E1
ФP
ФP1
e
9.900
10.100
0.390
0.398
-
-
-
-
-
-
-
-
1.500
2.54BSC
12.900
13.100
13.300
0.508
0.524
L
70
70
30
30
70
70
70
30
-
-
-
-
-
-
-
-
-
-
ϴ1
ϴ2
-
-
50
10
90
50
3
ϴ
4
ϴ
www.goodark.com
Page 5 of 5
Rev.2.4
相关型号：
SSF6010A
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
SSF6010A_15
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
SSF6010G
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
SSF6010G_15
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
SSF6010_15
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
SSF6014
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
SSF6014
Power switching applicationWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
SILIKRON
SSF6014A
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
SSF6014A_15
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
SSF6014D
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
SSF6014D_15
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
SSF6014_15
60V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
GOOD-ARK
©2020 ICPDF网 联系我们和版权申明