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SSF7N60F [GOOD-ARK]

Power Field-Effect Transistor, 7A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN;
SSF7N60F
型号： SSF7N60F
厂家： GOOD-ARK ELECTRONICS    GOOD-ARK ELECTRONICS
描述：

Power Field-Effect Transistor, 7A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN

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SSF7N60F  
600V N-Channel MOSFET  
Main Product Characteristics  
VDSS 600V  
RDS(on) 0.9ohm(typ.)  
ID 7A  
MarkingandPin  
Assignment  
TO-220F  
SchematicDiagram  
Features and Benefits  
AdvancedtrenchMOSFETprocess technology  
Special designed for PWM, load switching and  
generalpurposeapplications  
Ultralowon-resistancewithlowgatecharge  
Fastswitching andreversebodyrecovery  
150℃operating temperature  
Leadfreeproduct  
Description  
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the  
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely  
efficient andreliable devicefor useinpower switching application and awidevarietyof other applications.  
Absolute Max Rating  
Symbol  
Parameter  
Max.  
7
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V①  
Continuous Drain Current, VGS @ 10V①  
Pulsed Drain Current②  
A
4.4  
28  
48  
W
W/°C  
V
Power Dissipation③  
PD @TC = 25°C  
Linear Derating Factor  
0.38  
600  
VDS  
Drain-Source Voltage  
VGS  
Gate-to-Source Voltage  
± 30  
607.9  
8.8  
V
EAS  
Single Pulse Avalanche Energy @ L=15.7mH  
Avalanche Current @ L=15.7mH  
Operating Junction and Storage Temperature Range  
mJ  
A
IAS  
TJ TSTG  
-55 to + 150  
°C  
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Page 1 of 7  
Rev.1.0  
SSF7N60F  
600V N-Channel MOSFET  
Thermal Resistance  
Symbol  
Characteristics  
Typ.  
—
Max.  
2.6  
62  
Units  
℃/W  
℃/W  
℃/W  
RθJC  
Junction-to-case③  
—
Junction-to-ambient (t ≤ 10s) ④  
Junction-to-Ambient (PCB mounted, steady-state) ④  
RθJA  
—
40  
Electrical Characteristics @TA=25℃ unless otherwise specified  
Symbol Parameter  
Min.  
600  
—
Typ.  
—
Max.  
—
1.0  
—
4
Units  
Conditions  
V(BR)DSS Drain-to-Source breakdown voltage  
V
VGS = 0V, ID = 250μA  
VGS=10V,ID = 2A  
TJ = 125℃  
0.9  
RDS(on)  
VGS(th)  
IDSS  
Static Drain-to-Source on-resistance  
Gate threshold voltage  
Ω
V
—
2.07  
—
2
VDS = VGS, ID = 250μA  
TJ = 125℃  
—
1.92  
—
—
1
—
VDS = 600V,VGS = 0V  
TJ = 125℃  
Drain-to-Source leakage current  
Gate-to-Source forward leakage  
μA  
nA  
—
—
50  
100  
—
—
—
—
—
—
—
—
—
—
—
—
—
VGS =30V  
IGSS  
-100  
—
—
VGS = -30V  
Qg  
Total gate charge  
Gate-to-Source charge  
Gate-to-Drain("Miller") charge  
Turn-on delay time  
Rise time  
40.6  
5.9  
ID = 7A,  
nC  
ns  
VDS=480V,  
Qgs  
Qgd  
td(on)  
tr  
—
VGS = 10V  
—
17.9  
15.7  
35.2  
136.2  
58.7  
1171  
130  
14  
—
VGS=10V, VDS=300V,  
—
RL=42.85Ω,  
RGEN=25Ω  
ID=7A  
td(off)  
tf  
Turn-Off delay time  
Fall time  
—
—
Ciss  
Coss  
Crss  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
—
VGS = 0V  
VDS = 25V  
ƒ = 1MHz  
pF  
—
—
Source-Drain Ratings and Characteristics  
Symbol  
Parameter  
Continuous Source Current  
(Body Diode)  
Min.  
Typ.  
Max.  
Units  
Conditions  
MOSFET symb
showing the  
IS  
—
—
7
A
integral reverse  
p-n junction diode.  
IS=7A, VGS=0V  
Pulsed Source Current  
(Body Diode)  
ISM  
—
—
28  
A
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
—
—
—
0.89  
368.7  
3790  
1.3  
—
V
ns  
nC  
TJ = 25°C, IF =7A, di/dt =  
100A/μs  
Qrr  
—
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Page 2 of 7  
Rev.1.0  
SSF7N60F  
600V N-Channel MOSFET  
Test Circuits and Waveforms  
aveforms:  
Notes:  
①The maximum current rating is limited by bond-wires.  
②Repetitive rating; pulse width limited by max. junction temperature.  
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal  
resistance.  
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a  
still air environment with TA =25°C  
⑤These curves are based on the junction-to-case thermal impedence which is measured with the  
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.  
⑥ The maximum current rating is limited by bond-wires.  
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Page 3 of 7  
Rev.1.0  
SSF7N60F  
600V N-Channel MOSFET  
Typical Electrical and Thermal Characteristics  
Figure 2. Gate to source cut-off voltage  
Figure 1: Typical Output Characteristics  
Figure 3. Drain-to-Source Breakdown Voltage vs.  
Temperature  
Figure 4: Normalized On-Resistance Vs. Case  
Temperature  
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Page 4 of 7  
Rev.1.0  
SSF7N60F  
600V N-Channel MOSFET  
Typical Electrical and Thermal Characteristics  
Figure 5. Maximum Drain Current Vs. Case  
Temperature  
Figure 6.Typical Capacitance Vs. Drain-to-Source  
Voltage  
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
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Page 5 of 7  
Rev.1.0  
SSF7N60F  
600V N-Channel MOSFET  
Mechanical Data  
TO220F PACKAGE OUTLINE DIMENSION  
Dimension In Millimeters  
Dimension In Inches  
Symbol  
Min  
Nom  
10.160  
7.000  
Max  
Min  
0.392  
0.276  
0.121  
0.365  
0.617  
0.177  
0.255  
0.126  
0.614  
0.376  
Nom  
0.400  
0.000  
0.125  
0.372  
0.625  
0.185  
0.263  
0.130  
0.622  
0.384  
1.00 (TYP)  
-
Max  
0.408  
0.000  
0.129  
0.380  
0.633  
0.193  
0.271  
0.134  
0.630  
0.392  
A
9.960  
10.360  
A1  
A2  
A3  
B1  
B2  
B3  
C
C1  
C2  
D
3.080  
9.260  
15.670  
4.500  
6.480  
3.200  
15.600  
9.550  
3.180  
9.460  
15.870  
4.700  
6.680  
3.300  
15.800  
9.750  
3.280  
9.660  
16.070  
4.900  
6.880  
3.400  
16.000  
9.950  
2.54 (TYP)  
D1  
D2  
D3  
-
-
1.470  
0.900  
0.450  
-
0.058  
0.035  
0.018  
0.700  
0.250  
0.800  
0.350  
0.028  
0.010  
0.031  
0.014  
E
2.340  
2.540  
0.700  
2.740  
0.092  
0.100  
0.028  
0.108  
E1  
1.0*450  
1.0*450  
0.020  
0.109  
E2  
E3  
E4  
0.450  
2.560  
0.500  
0.600  
2.960  
0.018  
0.101  
0.024  
0.117  
2.760  
300  
300  
ϴ
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Page 6 of 7  
Rev.1.0  
SSF7N60F  
600V N-Channel MOSFET  
Ordering and Marking Information  
Device Marking: SSF7N60F  
Package (Available)  
TO220F  
Operating Temperature Range  
C : -55 to 150 ºC  
Devices per Unit  
Packag Units/Tu Tubes/Inner  
Units/Inner Inner  
Box  
Units/Carton  
Boxes/Carton Box  
Box  
e Type be  
Box  
TO220F  
50  
20  
1000  
6
6000  
Reliability Test Program  
Test Item  
High  
Conditions  
Tj=125℃ to 150℃ @  
Duration Sample Size  
168 hours  
500 hours  
1000 hours  
3 lots x 77 devices  
Temperature  
Reverse  
80% of Max  
VDSS/VCES/VR  
Bias(HTRB)  
High  
Tj=150℃ @ 100% of  
168 hours  
500 hours  
1000 hours  
3 lots x 77 devices  
Temperature  
Gate  
Max VGSS  
Bias(HTGB)  
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Page 7 of 7  
Rev.1.0  

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