SSFP1N65 [GOOD-ARK]

StarMOST Power MOSFET; StarMOST功率MOSFET


型号：	SSFP1N65
厂家：	GOOD-ARK ELECTRONICS
描述：	StarMOST Power MOSFET StarMOST功率MOSFET
文件：	总2页 (文件大小：192K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSFP1N65

StarMOS^TPower MOSFET

■

Extremely high dv/dt capability

Low Gate Charge Qg results in

Simple Drive Requirement

VDSS = 650V

I^D25= 1.0A

■ 100% avalanche tested

■ Gate charge minimized

R^DS(ON)= 11.5Ω

■ Very low intrinsic capacitances

■ Very good manufacturing repeatability

Description

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout

with planar stripe DMOS technology.

Pin1–Gate

Pin2–Drain

Pin1–Source

Application

■ Switching application

Absolute Maximum Ratings

Parameter

Max.

1.0

0.6

Units

ID@Tc=25ْC

I^D@Tc=100ْC Continuous Drain Current,V^GS@10V

Pulsed Drain Current ①

Continuous Drain Current,VGS@10V

IDM

PD@TC=25ْC Power Dissipation

W/ْC

Linear Derating Factor

0.22

±30

VGS

EAS

IAR

Gate-to-Source Voltage

Single Pulse Avalanche Energy ②

Avalanche Current ①

1.0

2.8

4.5

EAR

dv/dt

Repetitive Avalanche Energy ①

Peak Diode Recovery dv/dt ③

Operating Junction and

V/ns

–55 to +175

TSTG

Storage Temperature Range

Cْ

Soldering Temperature, for 10 seconds

Mounting Torque,6-32 or M3 screw

300(1.6mm from case)

10 Ibf

●

in(1.1N m)

●

Thermal Resistance

Parameter

Junction-to-case

Min.

—

Typ.

—

Max.

Units

RθJC

RθCS

RθJA

4.53

—

Cْ /W

Case-to-Sink,Flat,Greased Surface

Junction-to-Ambient

—

0.50

—

SSFP1N65

StarMOS^TPower MOSFET

Electrical Characteristics @TJ=25 Cْ (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Test Conditions

VGS=0V,ID=250μA

V(BR)DSS

△V^(BR)DSS/△TJ

R^DS(on)

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp.Coefficient

650 —

0.6 —

9.3

2.0 —

—

V/ْC

Reference to 25ْC,I^D=250μA

Static Drain-to-Source On-resistance —

11.5 Ω VGS=10V,ID=0.5A ④

VGS(th)

Gate Threshold Voltage

4.0

—

VDS=VGS,ID=250μA

VDS=40V,ID=0.5A

VDS=650V,VGS=0V

VDS=480V,VGS=0V,TJ=150ْC

V^GS=20V

gfs

Forward Transconductance

—

0.75

—

IDSS

IGSS

Drain-to-Source Leakage current

μA

—

100

-100

6.2

—

Gate-to-Source Forward leakage

Gate-to-Source Reverse leakage

Total Gate Charge

—

VGS=-20V

4.8

0.7

2.7

ID=1.1A

V^DS=480V

Qgs

Qgd

td(on)

Gate-to-Source charge

Gate-to-Drain("Miller") charge

Turn-on Delay Time

V^GS=10V See

—

VDD=300V

I^D=1.1A

Rise Time

R^G=25Ω

td(off)

Turn-Off Delay Time

Fall Time

Between lead,

6mm(0.25in.)

Internal Drain Inductance

Internal Source Inductance

—

4.5

7.5

—

nH from package

and center of

die contact

L^S

Ciss

Coss

Crss

Input Capacitance

—

130

170

VGS=0V

V^DS=25V

Output Capacitance

f=1.0MHZ

Reverse Transfer Capacitance

3.5

4.5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current .

(Body Diode)

Min.

Typ.

Max.

Units

Test Conditions

MOSFET symbol

showing the

—

integral reverse

p-n junction diode.

Pulsed Source Current

ISM

—

(Body Diode) ①

VSD Diode Forward Voltage

—

1.4

TJ=25ْC,IS=0.5A,VGS=0V ④

trr

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-on Time

190

0.53

—

nS TJ=25ْC,I^F=1.1A

di/dt=100A/μs ④

Qrr

ton

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Notes:

① Repetitive rating;pulse width limited by

max.junction temperature(see figure 11)

②L = 59mH, IAS =1.1 A, VDD = 50V,

RG = 25 ∧, Starting TJ = 25°C

③ I^SD≤1.1A,di/dt≤200A/μS,VDD≤V(BR)DSS,

StarMOST Power MOSFET

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