GS74108ATP-12I_技术文档

GS74108ATP/J/X

8, 10, 12 ns

SOJ, TSOP, FP-BGA

Commercial Temp

Industrial Temp

512K x 8

4Mb Asynchronous SRAM

3.3 V V

DD

Center V and V

DD

SS

Features

SOJ 512K x 8-Pin Configuration

• Fast access time: 8, 10, 12 ns

• CMOS low power operation: 120/95/85 mA at minimum

cycle time

• Single 3.3 V power supply

• All inputs and outputs are TTL-compatible

• Fully static operation

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

21

20

19

1

A4

NC

A5

2

A3

3

A2

A6

4

A1

A7

5

A0

A8

• Industrial Temperature Option: –40° to 85°C

• Package line up

6

CE

OE

DQ8

DQ7

V_SS

V_DD

DQ6

DQ5

A9

7

DQ1

DQ2

V_DD

V_SS

DQ3

DQ4

WE

A17

A16

A15

A14

A13

J:

400 mil, 36-pin SOJ package

8

36-pin

GJ: RoHS-compliant 400 mil, 36-pin SOJ package

TP: 400 mil, 44-pin TSOP-II package

GP: RoHS-compliant 400 mil, 44-pin TSOP-II package

X: 6 mm x 10 mm FPBGA package

9

400 mil SOJ

10

11

12

13

14

15

16

17

18

GX: RoHS-compliant 6 mm x 10 mm FPBGA package

• RoHS-compliant packages available

A10

A11

A12

A18

NC

Description

The GS74108A is a high speed CMOS Static RAM organized

as 524,288 words by 8 bits. Static design eliminates the need

for external clocks or timing strobes. The GS74108A operates

on a single 3.3 V power supply and all inputs and outputs are

TTL-compatible. The GS74108A is available in 400 mil SOJ,

400 mil TSOP-II, and 6 mm x 10 mm FPBGA packages.

FP-BGA 512K x 8 Bump Configuration (Package X)

1

2

3

4

5

6

Pin Descriptions

A

B

C

D

E

F

NC

OE

A2

A1

A6

A5

A7

NC

Symbol

A0–A18

DQ1–DQ8

CE

Description

Address input

DQ1 NC

DQ2 NC

CE DQ8

NC DQ7

A0

A4

Data input/output

Chip enable input

Write enable input

Output enable input

+3.3 V power supply

VSS

VDD

NC

A18

A17

A13

A14

A15

A3

NC

VDD

VSS

WE

A9

OE

DQ3 NC

DQ4 NC

A10

A11

A12

NC DQ6

WE DQ5

V

DD

G

H

V

Ground

SS

NC

A16

A8

NC

No connect

6 mm x 10 mm

*All GSI Technology packages are at least 5/6 RoHS compliant.

Packages listed with the additional “G” designator are 6/6 RoHS compliant.

Rev: 1.07 1/2006

1/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

TSOP-II 512K x 8-Pin Configuration

NC

A4

1

44

NC

A5

2

43

42

3

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

4

A3

5

A2

A6

6

A1

A7

7

A0

A8

8

CE

OE

DQ8

DQ7

V_SS

V_DD

DQ6

DQ5

A9

9

DQ1

DQ2

V_DD

V_SS

DQ3

DQ4

10

11

12

13

14

15

16

17

18

44-pin

400 mil TSOP II

WE

A17

A16

A10

A11

A12

A18

NC

A15

A14

19

20

21

22

A13

NC

24

23

NC

Block Diagram

A0

Row

Decoder

Memory Array

Address

Input

Buffer

Column

Decoder

A18

CE

WE

OE

I/O Buffer

Control

DQ8

DQ1

Rev: 1.07 1/2006

2/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Truth Table

CE

V

Current

OE

WE

DQ1 to DQ8

DD

H

L

X

L

X

H

L

Not Selected

Read

ISB1, ISB2

X

H

Write

IDD

H

High Z

Note:

X: “H” or “L”

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

–0.5 to +4.6

V

–0.5 to V +0.5

DD

Input Voltage

VIN

V

(≤ 4.6 V max.)

–0.5 to V +0.5

DD

Output Voltage

VOUT

V

(≤ 4.6 V max.)

Allowable power dissipation

Storage temperature

PD

0.7

W

o

TSTG

–55 to 150

C

Note:

Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended

Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.

Recommended Operating Conditions

Parameter

Supply Voltage for -8/-10/-12

Input High Voltage

Symbol

Min

3.0

Typ

3.3

—

Max

Unit

V

3.6

V

DD

V

+0.3

VIH

VIL

2.0

DD

Input Low Voltage

–0.3

—

0.8

Ambient Temperature,

Commercial Range

o

TAc

TAI

0

—

70

85

C

Ambient Temperature,

Industrial Range

o

–40

C

Notes:

1. Input overshoot voltage should be less than V +2 V and not exceed 20 ns.

DD

2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.

Rev: 1.07 1/2006

3/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Capacitance

Parameter

Symbol

CIN

Test Condition

VIN = 0 V

Max

Unit

pF

Input Capacitance

Output Capacitance

5

7

COUT

VOUT = 0 V

pF

Notes:

1. Tested at TA = 25°C, f = 1 MHz

2. These parameters are sampled and are not 100% tested.

DC I/O Pin Characteristics

Parameter

Symbol

Test Conditions

Min

Max

Input Leakage

Current

VIN = 0 to V

DD

IIL

– 1 uA

–1 uA

1 uA

Output High Z

Output Leakage

Current

ILO

1 uA

VOUT = 0 to V

DD

Output High Voltage

Output Low Voltage

VOH

VOL

IOH = –4 mA

ILO = +4 mA

2.4

—

0.4 V

Power Supply Currents

0 to 70°C

–40 to 85°C

Parameter

Symbol

Test Conditions

CE ≤ VIL

8 ns

10 ns

12 ns

8 ns

10 ns

12 ns

Operating

Supply

Current

All other inputs

≥ VIH or ≤ VIL

Min. cycle time

IOUT = 0 mA

IDD

120 mA

95 mA

85 mA

130 mA

105 mA

95 mA

CE ≥ VIH

Standby

Current

All other inputs

≥ VIH or ≤VIL

Min. cycle time

ISB1

ISB2

30 mA

25 mA

10 mA

22 mA

40 mA

35 mA

20 mA

32 mA

CE ≥ VDD - 0.2V

All other inputs

≥ VDD - 0.2V or ≤ 0.2V

Standby

Current

Rev: 1.07 1/2006

4/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

AC Test Conditions

Output Load 1

Parameter

Input high level

Input low level

Conditions

VIH = 2.4 V

V^IL= 0.4 V

tr = 1 V/ns

tf = 1 V/ns

1.4 V

DQ

1

30pF

50Ω

Input rise time

VT = 1.4 V

Input fall time

Input reference level

Output reference level

Output load

Output Load 2

1.4 V

3.3 V

Fig. 1& 2

589Ω

434Ω

DQ

Notes:

1

1. Include scope and jig capacitance.

5pF

2. Test conditions as specified with output loading as shown in Fig. 1

unless otherwise noted.

3. Output load 2 for t^LZ, tHZ, tOLZ and tOHZ

AC Characteristics

Read Cycle

-8

-10

-12

Parameter

Symbol

Unit

Min

8

Max

—

8

Min

Max

—

Min

12

—

3

Max

—

Read cycle time

tRC

tAA

tAC

tOE

tOH

10

—

3

ns

Address access time

—

3

10

4

12

5

Chip enable access time (CE)

Output enable to output valid (OE)

Output hold from address change

Chip enable to output in low Z (CE)

8

3.5

—

*

3

—

3

—

tLZ

*

Output enable to output in low Z (OE)

Chip disable to output in High Z (CE)

0

—

4

0

—

5

0

—

6

ns

tOLZ

*

—

tHZ

*

Output disable to output in High Z (OE)

3.5

4

5

tOHZ

* These parameters are sampled and are not 100% tested.

Rev: 1.07 1/2006

5/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Read Cycle 1: CE = OE = V , WE = V

IL

IH

tRC

Address

Data Out

tAA

tOH

Previous Data

Data valid

Read Cycle 2: WE = V

IH

tRC

Address

CE

tAA

tAC

tHZ

tLZ

OE

tOE

tOHZ

tOLZ

DATA VALID

Data Out

High impedance

Rev: 1.07 1/2006

6/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Write Cycle

-8

-10

-12

Parameter

Symbol

Unit

Max

Min

8

Max

—

Min

10

7

Max

—

Min

12

8

Write cycle time

Address valid to end of write

Chip enable to end of write

Data set up time

tWC

tAW

tCW

tDW

tDH

—

ns

5.5

4

7

8

5

6

Data hold time

0

Write pulse width

tWP

tAS

5.5

0

7

8

Address set up time

Write recovery time (WE)

Write recovery time (CE)

0

tWR

tWR1

0

*

Output Low Z from end of write

Write to output in High Z

3

tWLZ

*

—

3.5

—

4

—

5

ns

tWHZ

* These parameters are sampled and are not 100% tested.

Write Cycle 1: WE control

tWC

Address

OE

tAW

tWR

tCW

CE

tAS

tWP

WE

tDW

tDH

DATA VALID

Data In

Data Out

tWHZ

tWLZ

HIGH IMPEDANCE

Rev: 1.07 1/2006

7/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Write Cycle 2: CE control

tWC

Address

OE

tAW

tWR1

tAS

tCW

CE

tWP

WE

tDW

tDH

DATA VALID

Data In

Data Out

HIGH IMPEDANCE

36-Pin SOJ, 400 mil

Dimension in inch

Dimension in mm

Symbol

min

nom

—

max

min

—

nom

—

max

3.70

—

L

D

A

A1

A2

B

—

0.146

—

c

0.026

—

0.66

2.67

0.33

0.61

0.15

—

0.105 0.110 0.115

0.013 0.017 0.021

0.024 0.028 0.032

0.006 0.008 0.012

2.80

0.43

0.71

0.20

2.92

0.53

0.81

0.30

B1

c

1

e

A

D

0.920 0.924 0.929 23.37 23.47 23.60

0.395 0.400 0.405 10.04 10.16 10.28

E

e

—

0.05

—

1.27

—

B

B1

y

H^E

G^E

L

0.430 0.435 0.440 10.93 11.05 11.17

Q

Detail A

0.354 0.366 0.378

9.00

2.08

—

9.30

—

9.60

—

0.082

—

y

0.004

—

0.10

o

Q

—

0

10

0

10

Notes:

1. Dimension D& E do not include interlead flash.

2. Dimension B1 does not include dambar protrusion/intrusion.

Rev: 1.07 1/2006

8/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

44-Pin, 400 mil TSOP-II

D

Dimension in inch Dimension in mm

min nom max min nom max

c

44

23

22

Symbol

A

A1

A2

B

—

0.047

—

1.20

—

0.002

0.05

—

A

0.037 0.039 0.041 0.95

0.01 0.014 0.018 0.25

1.00

0.35

0.15

1.05

0.45

—

c

—

0.006

—

1

e

D

0.721 0.725 0.729 18.31 18.41 18.51

0.396 0.400 0.404 10.06 10.16 10.26

B

E

e

—

0.031

—

0.80

—

H^E

L

0.455 0.463 0.471 11.56 11.76 11.96

y

0.016 0.020 0.024 0.40

0.50

0.80

—

0.60

—

L1

y

—

0.031

—

Q

0.004

0.10

Detail A

o

Q

—

0

5

0

5

Notes:

1. Dimension D& E do not include interlead flash.

2. Dimension B does not include dambar protrusion/intrusion.

3. Controlling dimension: mm

Rev: 1.07 1/2006

9/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

6 mm x 10 mm FPBGA

Symbol

Unit: mm

D

A

1.10±0.10

0.20~0.30

f0.30~0.40

0.36(TYP)

10.0±0.05

5.25

A1

fb

c

E

D

Pin A1

Index

D1

E

6.0±0.05

3.75

E1

e

0.75(TYP)

0.10

Top View

aaa

A

c

Side View

A1

aaa

E1

Pin A1

A B C D E F G H

fb Solder Ball

Index

1

2

3

4

5

6

e

D1

Bottom View

Rev: 1.07 1/2006

10/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Ordering Information

1

2

3

Access Time

Temp. Range

Part Number

Package

Status

GS74108ATP-8

GS74108ATP-10

GS74108ATP-12

GS74108ATP-8I

GS74108ATP-10I

GS74108ATP-12I

GS74108AGP-8

GS74108AGP-10

GS74108AGP-12

GS74108AGP-8I

GS74108AGP-10I

GS74108AGP-12I

GS74108AJ-8

400 mil TSOP-II

8 ns

10 ns

12 ns

8 ns

Commercial

Industrial

MP

PQ

MP

PQ

MP

400 mil TSOP-II

10 ns

12 ns

8 ns

Industrial

400 mil TSOP-II

Industrial

RoHS-compliant 400 mil TSOP-II

400 mil SOJ

Commercial

Industrial

10 ns

12 ns

8 ns

10 ns

12 ns

8 ns

Industrial

Commercial

Industrial

GS74108AJ-10

GS74108AJ-12

GS74108AJ-8I

400 mil SOJ

10 ns

12 ns

8 ns

400 mil SOJ

GS74108AJ-10I

GS74108AJ-12I

GS74108AGJ-8

GS74108AGJ-10

GS74108AGJ-12

GS74108AGJ-8I

GS74108AGJ-10I

GS74108AGJ-12I

GS74108AX-8

400 mil SOJ

10 ns

12 ns

8 ns

Industrial

400 mil SOJ

Industrial

RoHS-compliant 400 mil SOJ

6 mm x 10 mm FPBGA

Commercial

Industrial

10 ns

12 ns

8 ns

10 ns

12 ns

8 ns

Industrial

Commercial

Industrial

GS74108AX-10

GS74108AX-12

GS74108AX-8I

GS74108AX-10I

10 ns

12 ns

8 ns

10 ns

Industrial

Rev: 1.07 1/2006

11/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

Ordering Information

1

2

3

Access Time

Temp. Range

Part Number

Package

Status

GS74108AX-12I

GS74108AGX-8

GS74108AGX-10

GS74108AGX-12

GS74108AGX-8I

GS74108AGX-10I

GS74108AGX-12I

Notes:

6 mm x 10 mm FPBGA

12 ns

8 ns

Industrial

Commercial

Industrial

MP

PQ

RoHS-compliant 6 mm x 10 mm FPBGA

10 ns

12 ns

8 ns

10 ns

12 ns

Industrial

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. For example: GS74108ATP-8T.

2. All GSI Technology packages are at least 5/6 RoHS compliant. Packages listed with the additional “G” designator are 6/6 RoHS compliant.

3. MP = Mass Production. PQ = Pre-Qualification.

Rev: 1.07 1/2006

12/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS74108ATP/J/X

4M Asynchronous Datasheet Revision History

Rev. Code: Old;

New

Types of Changes

Format or Content

Page #/Revisions/Reason

• Creation of new datasheet

74108A_r1

Format/Content

• Added 6 ns speed bin

• Updated all power numbers

74108A_r1; 74108A_r1_01

Content

• Updated Recommended Operating Conditions table on page 4

• Added 7 ns bin to entire document

74108A_r1_01; 74108A_r1_02

Content

• Added X package

• Removed 6 ns speed bin from entire document

• Corrected “X” package pinout

74108A_r1_02; 74108A_r1_03

74108A_r1_03; 74108A_r1_04

74108A_r1_04; 74108A_r1_05

74108A_r1_05; 74108A_r1_06

Content

• Removed 7 ns speed bin from entire document

• Updated format

• Added Pb-free information for TSOP-II package

• Added Pb-free information for FP-BGA package

• Added RoHS-compliant information for SOJ

• Changed Pb-free references to RoHS-compliant

• Added status to ordering information table

74108A_r1_06; 74108A_r1_07

Content

Rev: 1.07 1/2006

13/13

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.


型号：	GS74108ATP-12I
厂家：	GSI TECHNOLOGY
描述：	512K x 8 4Mb Asynchronous SRAM 512K ×8 4Mb的异步SRAM 存储内存集成电路静态存储器光电二极管
文件：	总13页 (文件大小：647K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GS74108ATP-12I [GSI]

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