GS8150V18AB-300 [GSI]

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM; 1M ×18 , 512K ×36 18MB注册,注册后写入SRAM
GS8150V18AB-300
型号: GS8150V18AB-300
厂家: GSI TECHNOLOGY    GSI TECHNOLOGY
描述:

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
1M ×18 , 512K ×36 18MB注册,注册后写入SRAM

静态存储器
文件: 总25页 (文件大小:800K)
下载:  下载PDF数据表文档文件

GS8150V18AB-300I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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12 GSI

GS8150V18AB-300I

Late-Write SRAM, 1MX18, 1.6ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-300IT

Late-Write SRAM, 1MX18, 1.6ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-300T

Late-Write SRAM, 1MX18, 1.6ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-333

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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12 GSI

GS8150V18AB-333

Late-Write SRAM, 1MX18, 1.5ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-333I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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13 GSI

GS8150V18AB-333I

Late-Write SRAM, 1MX18, 1.5ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-333IT

暂无描述

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0 GSI

GS8150V18AB-357

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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22 GSI

GS8150V18AB-357

Late-Write SRAM, 1MX18, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-357I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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23 GSI

GS8150V18AB-357I

Late-Write SRAM, 1MX18, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-357IT

Late-Write SRAM, 1MX18, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-357T

Late-Write SRAM, 1MX18, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI