GS8150V18AB-333I [GSI]

Late-Write SRAM, 1MX18, 1.5ns, CMOS, PBGA119, FBGA-119;
GS8150V18AB-333I
型号: GS8150V18AB-333I
厂家: GSI TECHNOLOGY    GSI TECHNOLOGY
描述:

Late-Write SRAM, 1MX18, 1.5ns, CMOS, PBGA119, FBGA-119

静态存储器 内存集成电路
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GS8150V18AB-333IT

暂无描述

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0 GSI

GS8150V18AB-357

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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22 GSI

GS8150V18AB-357

Late-Write SRAM, 1MX18, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-357I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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23 GSI

GS8150V18AB-357I

Late-Write SRAM, 1MX18, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-357IT

Late-Write SRAM, 1MX18, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-357T

Late-Write SRAM, 1MX18, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AB-357T

Late-Write SRAM, 1MX18, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V18AGB-250

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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15 GSI

GS8150V18AGB-250

Late-Write SRAM, 1MX18, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V18AGB-250I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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21 GSI

GS8150V18AGB-250I

Late-Write SRAM, 1MX18, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V18AGB-300

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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8 GSI

GS8150V18AGB-300I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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28 GSI

GS8150V18AGB-300I

Late-Write SRAM, 1MX18, 1.6ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI