GS8150V36AB-357 [GSI]

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM; 1M ×18 , 512K ×36 18MB注册,注册后写入SRAM
GS8150V36AB-357
型号: GS8150V36AB-357
厂家: GSI TECHNOLOGY    GSI TECHNOLOGY
描述:

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM
1M ×18 , 512K ×36 18MB注册,注册后写入SRAM

静态存储器
文件: 总25页 (文件大小:800K)
下载:  下载PDF数据表文档文件

GS8150V36AB-357I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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13 GSI

GS8150V36AB-357IT

Late-Write SRAM, 512KX36, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AB-357IT

Late-Write SRAM, 512KX36, 1.4ns, CMOS, PBGA119, FBGA-119

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0 GSI

GS8150V36AGB-250

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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14 GSI

GS8150V36AGB-250

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-250I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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24 GSI

GS8150V36AGB-250I

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-250IT

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-250IT

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-250T

Late-Write SRAM, 512KX36, 2ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-300

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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23 GSI

GS8150V36AGB-300

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-300I

1M x 18, 512K x 36 18Mb Register-Register Late Write SRAM

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14 GSI

GS8150V36AGB-300I

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI

GS8150V36AGB-300T

Late-Write SRAM, 512KX36, 1.6ns, CMOS, PBGA119, ROHS COMPLIANT, FBGA-119

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0 GSI