GS8161E18BT-150V_技术文档

Preliminary

GS8161ExxB(T/D)-xxxV

100-Pin TQFP & 165-Bump BGA

Commercial Temp

Industrial Temp

250 MHz–150 MHz

1M x 18, 512K x 36, 512K x 36

18Mb Sync Burst SRAMs

1.8 V or 2.5 V V

DD

1.8 V or 2.5 V I/O

ADV. The burst address counter may be configured to count in

either linear or interleave order with the Linear Burst Order (LBO)

input. The Burst function need not be used. New addresses can be

loaded on every cycle with no degradation of chip performance.

Features

• FT pin for user-configurable flow through or pipeline

operation

• Dual Cycle Deselect (DCD) operation

• IEEE 1149.1 JTAG-compatible Boundary Scan

• 1.8 V or 2.5 V core power supply

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by the

user via the FT mode pin (Pin 14). Holding the FT mode pin low

places the RAM in Flow Through mode, causing output data to

bypass the Data Output Register. Holding FT high places the

RAM in Pipeline mode, activating the rising-edge-triggered Data

Output Register.

• 1.8 V or 2.5 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

DCD Pipelined Reads

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP and 165 BGA packages

• RoHS-compliant 100-lead TQFP and 165 BGA packages

available

The GS8161ExxB(T/D)-xxxV is a DCD (Dual Cycle Deselect)

pipelined synchronous SRAM. SCD (Single Cycle Deselect)

versions are also available. DCD SRAMs pipeline disable

commands to the same degree as read commands. DCD RAMs

hold the deselect command for one full cycle and then begin

turning off their outputs just after the second rising edge of clock.

Functional Description

Byte Write and Global Write

Applications

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write control

inputs.

The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high

performance synchronous SRAM with a 2-bit burst address

counter. Although of a type originally developed for Level 2

Cache applications supporting high performance CPUs, the device

now finds application in synchronous SRAM applications, ranging

from DSP main store to networking chip set support.

Sleep Mode

Low power (Sleep mode) is attained through the assertion (High)

of the ZZ signal, or by stopping the clock (CK). Memory data is

retained during Sleep mode.

Controls

Addresses, data I/Os, chip enable (E1), address burst control

inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW,

GW) are synchronous and are controlled by a positive-edge-

triggered clock input (CK). Output enable (G) and power down

control (ZZ) are asynchronous inputs. Burst cycles can be initiated

with either ADSP or ADSC inputs. In Burst mode, subsequent

burst addresses are generated internally and are controlled by

Core and Interface Voltages

The GS8161ExxB(T/D)-xxxV operates on a 1.8 V or 2.5 V power

supply. All inputs are 1.8 V or 2.5 V compatible. Separate output

power (V_DDQ) pins are used to decouple output noise from the

internal circuits and are 1..8 V or 2.5 V compatible.

Parameter Synopsis

-250

-200

-150

Unit

t_KQ

tCycle

3.0

4.0

3.0

5.0

3.8

6.7

ns

Pipeline

3-1-1-1

280

330

230

270

185

210

mA

Curr (x18)

Curr (x32/x36)

t_KQ

5.5

6.5

7.5

ns

tCycle

Flow Through

2-1-1-1

210

240

185

205

170

190

mA

Curr (x18)

Curr (x32/x36)

Rev: 1.01a 6/2006

1/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

GS8161E18BT-xxxV 100-Pin TQFP Pinout

100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81

A

NC

1

2

3

4

5

6

7

8

9

80

79

78

77

76

75

74

73

72

71

70

69

68

67

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

51

NC

V

NC

DQPA

DQA

V

DQA

V

NC

V

ZZ

DQ^A

DQA

V

DDQ

V

SS

NC

DQB

1M X 18

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

V

SS

Top View

V

DDQ

DQB

FT

SS

V

DD

NC

DD

V

SS

DQB

V

DDQ

V

SS

DQA

NC

V

DQB

DQPB

NC

V

SS

V

DDQ

NC

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

Rev: 1.01a 6/2006

2/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

GS8161E36BT-xxxV 100-Pin TQFP Pinout

100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81

DQPB

DQB

DQPC

DQC

1

2

3

4

5

6

7

8

9

80

79

78

77

76

75

74

73

72

71

70

69

68

67

66

65

64

63

62

61

60

59

58

57

56

55

54

53

52

51

V

DDQ

V

SS

DQB

DQC

512K x 36

V

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

V

SS

V

Top View

V

DDQ

DQB

DQC

FT

V

SS

NC

V

DD

V

NC

DD

ZZ

DQ^A

DQA

V

SS

DQD

V

DDQ

V

SS

DQA

DQD

V

SS

V

DDQ

DQA

DQPA

DQD

DQPD

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

Rev: 1.01a 6/2006

3/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

TQFP Pin Description

Symbol

A0, A1

A

Type

Description

I

Address field LSBs and Address Counter preset Inputs

Address Inputs

DQA

DQB

DQC

DQD

I/O

Data Input and Output pins

NC

BW

—

I

No Connect

Byte Write—Writes all enabled bytes; active low

Byte Write Enable for DQA, DQB Data I/Os; active low

Clock Input Signal; active high

Global Write Enable—Writes all bytes; active low

Chip Enable; active low

BA, BB, BC, BD

CK

I

GW

I

E1

I

G

I

Output Enable; active low

ADV

ADSP, ADSC

ZZ

I

Burst address counter advance enable; active low

Address Strobe (Processor, Cache Controller); active low

Sleep Mode control; active high

Scan Test Mode Select

I

TMS

TDI

I

Scan Test Data In

TDO

TCK

O

I

Scan Test Data Out

Scan Test Clock

FT

I

Flow Through or Pipeline mode; active low

Linear Burst Order mode; active low

Scan Test Mode Select

LBO

I

TMS

TDI

I

Scan Test Data In

O

I

Scan Test Data Out

TDO

TCK

Scan Test Clock

V

I

Core power supply

DD

V

I

I/O and Core Ground

SS

V

Output driver power supply

DDQ

Rev: 1.01a 6/2006

4/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

165 Bump BGA—x18 Commom I/O—Top View (Package D)

1

2

3

4

5

6

7

8

9

10

11

A

B

C

D

E

F

NC

A

E1

BB

NC

E3

BW

ADSC

ADV

A

B

C

D

E

F

NC

A

E2

NC

BA

CK

GW

G

ADSP

A

NC

DQA

NC

A

NC

DQPA

DQA

ZZ

NC

V

DDQ

SS

DD

SS

DD

DDQ

NC

DQB

MCL

NC

V

NC

G

H

J

NC

G

H

J

FT

NC

DQB

DQPB

NC

V

NC

DDQ

K

L

NC

V

NC

K

L

NC

M

N

P

R

NC

M

N

P

R

NC

V

NC

TDI

A

NC

V

NC

DDQ

SS

DDQ

NC

A

A1

A0

TDO

TCK

A

LBO

NC

A

TMS

A

11 x 15 Bump BGA—13mm x 15 mm Body—1.0 mm Bump Pitch

Rev: 1.01a 6/2006

5/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

165 Bump BGA—x32 Common I/O—Top View (Package D)

1

2

3

4

5

6

7

8

9

10

11

A

B

C

D

E

F

NC

A

E1

BC

BB

E3

BW

ADSC

ADV

A

NC

A

B

C

D

E

F

NC

A

E2

BD

BA

CK

GW

G

ADSP

A

NC

V

NC

DDQ

SS

DD

SS

DD

DDQ

DQC

FT

DQC

MCL

DQD

NC

V

DQB

NC

DQB

ZZ

G

H

J

G

H

J

NC

DQD

NC

V

DQA

NC

DQA

NC

DDQ

K

L

V

K

L

M

N

P

R

M

N

P

R

V

NC

TDI

A

NC

V

SS

DDQ

SS

DDQ

NC

A

A1

A0

TDO

TCK

A

LBO

NC

A

TMS

A

11 x 15 Bump BGA—13mm x 15 mm Body—1.0 mm Bump Pitch

Rev: 1.01a 6/2006

6/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

165 Bump BGA—x36 Common I/O—Top View (Package D)

1

2

3

4

5

6

7

8

9

10

11

A

B

C

D

E

F

NC

A

E1

BC

BB

E3

BW

ADSC

ADV

A

NC

A

B

C

D

E

F

NC

DQPC

DQC

FT

A

E2

BD

BA

CK

GW

G

ADSP

A

NC

DQPB

DQB

ZZ

NC

V

NC

DDQ

SS

DD

SS

DD

DDQ

DQC

MCL

DQD

NC

V

DQB

NC

G

H

J

G

H

J

NC

DQD

DQPD

NC

V

DQA

NC

DQA

DQPA

A

DDQ

K

L

V

K

L

M

N

P

R

M

N

P

R

V

NC

TDI

A

NC

V

SS

DDQ

SS

DDQ

NC

A

A1

A0

TDO

TCK

A

LBO

NC

A

TMS

A

11 x 15 Bump BGA—13mm x 15 mm Body—1.0 mm Bump Pitch

Rev: 1.01a 6/2006

7/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

GS8161E18/32/36BD-xxxV 165-Bump BGA Pin Description

Symbol

A0, A1

A

Type

Description

I

Address field LSBs and Address Counter Preset Inputs

Address Inputs

DQA

DQB

DQC

DQD

I/O

Data Input and Output pins

BA, BB, BC, BD

I

—

I

Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low

No Connect

NC

CK

Clock Input Signal; active high

Byte Write—Writes all enabled bytes; active low

Global Write Enable—Writes all bytes; active low

Chip Enable; active low

BW

I

GW

I

E1

I

E3

I

Chip Enable; active low

E2

I

Chip Enable; active high

G

I

Output Enable; active low

ADV

ADSC, ADSP

ZZ

I

Burst address counter advance enable; active l0w

Address Strobe (Processor, Cache Controller); active low

Sleep mode control; active high

Flow Through or Pipeline mode; active low

Linear Burst Order mode; active low

Scan Test Mode Select

I

FT

I

LBO

TMS

TDI

I

Scan Test Data In

O

I

Scan Test Data Out

TDO

TCK

MCL

Scan Test Clock

—

I

Must Connect Low

V

Core power supply

DD

V

I

I/O and Core Ground

SS

V

Output driver power supply

DDQ

Rev: 1.01a 6/2006

8/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

GS8161E18/32/36B-xxxV Block Diagram

Register

A0–An

D

Q

A0

A1

D0

D1

Q0

Q1

A1

Counter

Load

A

LBO

ADV

Memory

Array

CK

ADSC

ADSP

Q

D

Register

GW

BW

BA

D

Q

36

Register

D

Q

BB

BC

BD

4

Register

D

Q

Register

D

Q

Register

36

D

Q

36

Register

D

E1

Q

Register

D

Q

FT

G

36

DCD=0

Power Down

Control

DQx1–DQx9

ZZ

Note: Only x36 version shown for simplicity.

Rev: 1.01a 6/2006

9/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Mode Pin Functions

Mode Name

Pin Name

State

Function

Linear Burst

Interleaved Burst

Flow Through

Pipeline

L

Burst Order Control

LBO

H

L

H or NC

L or NC

H

Output Register Control

FT

ZZ

Active

Power Down Control

Standby, I = I

DD SB

L

Dual Cycle Deselect

Single Cycle Deselect

Single/Dual Cycle Deselect Control

FLXDrive Output Impedance Control

SCD

ZQ

H or NC

L

High Drive (Low Impedance)

Low Drive (High Impedance)

H or NC

Note:

There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in

the default states as specified in the above table.

There are pull-up devices on the ZQ and SCD pins and a pull-down device on the ZZ pin, so those input pins can be unconnected and the chip

will operate in the default states as specified in the above tables.

Burst Counter Sequences

Linear Burst Sequence

A[1:0] A[1:0] A[1:0] A[1:0]

Interleaved Burst Sequence

A[1:0] A[1:0] A[1:0] A[1:0]

1st address

2nd address

3rd address

4th address

00

01

10

11

01

10

11

00

10

11

00

01

11

00

01

10

1st address

2nd address

3rd address

4th address

00

01

10

11

01

00

11

10

11

00

01

11

10

01

00

Note:

The burst counter wraps to initial state on the 5th clock.

Note:

The burst counter wraps to initial state on the 5th clock.

BPR 1999.05.18

Rev: 1.01a 6/2006

10/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Byte Write Truth Table

Function

Read

GW

BW

H

L

BA

X

BB

X

BC

X

BD

X

Notes

1

H

L

Read

H

L

H

L

H

L

H

L

1

Write byte a

Write byte b

Write byte c

Write byte d

Write all bytes

L

2, 3

L

H

L

2, 3

L

H

L

2, 3, 4

L

H

L

X

Notes:

1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.

2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes.

3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.

4. Bytes “C” and “D” are only available on the x36 version.

Rev: 1.01a 6/2006

11/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Synchronous Truth Table

Operation

State

3

4

Diagram

Address Used

E1

ADSP ADSC

ADV

W

DQ

5

Key

Deselect Cycle, Power Down

Read Cycle, Begin Burst

None

External

R

H

L

X

L

X

L

X

L

X

F

T

F

T

F

T

High-Z

Q

D

Q

D

Q

D

Read Cycle, Begin Burst

Write Cycle, Begin Burst

Read Cycle, Continue Burst

Write Cycle, Continue Burst

Read Cycle, Suspend Burst

Write Cycle, Suspend Burst

R

L

X

H

X

H

X

H

X

H

X

H

X

H

X

H

X

W

L

CR

CW

H

Current

H

Notes:

1. X = Don’t Care, H = High, L = Low

2. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding.

3. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown

as “Q” in the Truth Table above).

4. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish

basic synchronous or synchronous burst operations and may be avoided for simplicity.

5. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above.

6. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above.

Rev: 1.01a 6/2006

12/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Simplified State Diagram

X

Deselect

W

R

W

R

X

R

X

First Write

First Read

CW

CR

W

R

X

Burst Write

X

Burst Read

CR

CW

CR

Notes:

1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low.

2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and

that ADSP is tied high and ADSC is tied low.

3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and

assumes ADSP is tied high and ADV is tied low.

Rev: 1.01a 6/2006

13/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Simplified State Diagram with G

X

Deselect

W

R

W

R

X

W

R

X

First Write

First Read

CR

CW

CR

W

R

W

X

Burst Write

X

Burst Read

CR

CW

CR

Notes:

1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.

2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing

through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.

3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet

Data Input Set Up Time.

Rev: 1.01a 6/2006

14/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Absolute Maximum Ratings

(All voltages reference to V

)

SS

Symbol

Description

Value

Unit

V

Voltage on V Pins

–0.5 to 4.6

DD

V

Voltage on V

Pins

–0.5 to V

V

DDQ

DD

V

–0.5 to V

+0.5 (≤ 4.6 V max.)

DDQ

Voltage on I/O Pins

Voltage on Other Input Pins

Input Current on Any Pin

Output Current on Any I/O Pin

Package Power Dissipation

Storage Temperature

V

I/O

V

–0.5 to V +0.5 (≤ 4.6 V max.)

IN

DD

I

+/–20

mA

W

IN

I

OUT

P

1.5

D

o

T

–55 to 125

C

STG

o

T

Temperature Under Bias

C

BIAS

Note:

Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended

Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of

this component.

Power Supply Voltage Ranges (1.8 V/2.5 V Version)

Parameter

Symbol

Min.

1.7

Typ.

1.8

Max.

2.0

Unit

Notes

V

1.8 V Supply Voltage

2.5 V Supply Voltage

V

DD1

V

2.3

2.5

2.7

DD2

1.8 V V

I/O Supply Voltage

V

1.7

1.8

DDQ

DDQ1

DD

2.5 V V

I/O Supply Voltage

V

2.3

2.5

DDQ2

DD

Notes:

1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-

tions quoted are evaluated for worst case in the temperature range marked on the device.

2. Input Under/overshoot voltage must be –2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.

DDn

Rev: 1.01a 6/2006

15/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

V

& V

Range Logic Levels

DDQ2

DDQ1

Parameter

Symbol

Min.

Typ.

—

Max.

Unit

V

Notes

V

Input High Voltage

V

0.6*V

V

+ 0.3

DD

1

DD

IH

DD

Input Low Voltage

V

0.3*V

DD

–0.3

—

V

DD

IL

Notes:

1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-

tions quoted are evaluated for worst case in the temperature range marked on the device.

2. Input Under/overshoot voltage must be –2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.

DDn

Recommended Operating Temperatures

Parameter

Symbol

Min.

0

Typ.

25

Max.

70

Unit

°C

Notes

T

Ambient Temperature (Commercial Range Versions)

2

A

T

Ambient Temperature (Industrial Range Versions)

–40

25

85

°C

A

Notes:

1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-

tions quoted are evaluated for worst case in the temperature range marked on the device.

2. Input Under/overshoot voltage must be –2 V > Vi < V +2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.

DDn

Undershoot Measurement and Timing

Overshoot Measurement and Timing

V

IH

20% tKC

V

+ 2.0 V

DD

V

SS

50%

V

DD

V

– 2.0 V

SS

20% tKC

V

IL

Capacitance

o

(T = 25 C, f = 1 MHZ, V = 2.5 V)

A

DD

Parameter

Symbol

Test conditions

Typ.

Max.

Unit

pF

C

V

= 0 V

Input Capacitance

4

6

5

7

IN

C

V

OUT

= 0 V

Input/Output Capacitance

pF

I/O

Note:

These parameters are sample tested.

Rev: 1.01a 6/2006

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

AC Test Conditions

Parameter

Conditions

V

– 0.2 V

Input high level

Input low level

DD

0.2 V

1 V/ns

/2

Figure 1

Output Load 1

Input slew rate

V

DQ

Input reference level

DD

V

/2

Output reference level

Output load

DDQ

*

50Ω

30pF

Fig. 1

Notes:

V

DDQ/2

* Distributed Test Jig Capacitance

1. Include scope and jig capacitance.

2. Test conditions as specified with output loading as shown in Fig. 1

unless otherwise noted.

3. Device is deselected as defined by the Truth Table.

DC Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Max

Input Leakage Current

(except mode pins)

I

V = 0 to V

IN DD

–1 uA

1 uA

IL

I

V

≥ V ≥ 0 V

DD IN

FT, ZZ Input Current

–100 uA

–1 uA

100 uA

1 uA

IN

I

Output Disable, V

= 0 to V

Output Leakage Current

OL

OUT DD

DC Output Characteristics (1.8 V/2.5 V Version)

Parameter

Symbol

Test Conditions

Min

Max

—

V

I

= –4 mA, V

= 1.6 V

V

– 0.4 V

DDQ

1.8 V Output High Voltage

2.5 V Output High Voltage

1.8 V Output Low Voltage

2.5 V Output Low Voltage

OH1

OH

DDQ

V

I

= –8 mA, V

= 2.375 V

DDQ

1.7 V

—

OH2

OH

V

I

= 4 mA

= 8 mA

—

0.4 V

OL1

OL

V

OL2

Rev: 1.01a 6/2006

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Operating Currents

-250

-200

-150

0

to

–40

to

0

to

–40

to

0

to

–40

to

Parameter

Test Conditions

Mode

Symbol

Unit

70°C

85°C

70°C

85°C

70°C

85°C

I_DD

290

40

300

40

240

30

250

30

190

20

200

20

Pipeline

mA

I_DDQ

(x32/

x36)

I_DD

220

20

230

20

190

15

200

15

175

15

185

15

Device Selected;

All other inputs

≥V_IHor ≤ V_IL

Flow Through

Pipeline

I_DDQ

Operating

Current

I_DD

260

20

270

20

215

15

225

15

170

15

180

15

Output open

I_DDQ

(x18)

I_DD

200

10

210

10

175

10

185

10

160

10

170

10

Flow Through

I_DDQ

I_SB

I_DD

Pipeline

Flow Through

Pipeline

40

85

50

90

40

75

50

80

40

60

50

65

mA

Standby

Current

ZZ ≥ V_DD– 0.2 V

—

Device Deselected;

All other inputs

≥ V_IHor ≤ V_IL

Deselect

Current

I_DD

Flow Through

60

65

50

55

50

55

mA

Notes:

1.

2. All parameters listed are worst case scenario.

I

and I

apply to any combination of V and V

operation.

DDQ

DD

DDQ

DD

Rev: 1.01a 6/2006

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

AC Electrical Characteristics

-250

-200

-150

Unit

Parameter

Symbol

Min

4.0

—

Max

—

3.0

—

5.5

—

Min

5.0

—

Max

—

3.0

—

6.5

—

Min

6.7

—

Max

—

3.8

—

7.5

—

Clock Cycle Time

Clock to Output Valid

Clock to Output Invalid

Clock to Output in Low-Z

Setup time

tKC

tKQ

ns

tKQX

1.5

0.2

5.5

—

1.5

0.4

6.5

—

1.5

0.5

7.5

—

Pipeline

tLZ¹

tS

Hold time

tH

Clock Cycle Time

Clock to Output Valid

Clock to Output Invalid

Clock to Output in Low-Z

Setup time

tKC

tKQ

tKQX

2.0

1.5

0.5

1.3

2.0

1.5

0.5

1.3

2.0

1.5

0.5

1.5

Flow Through

tLZ¹

tS

Hold time

tH

Clock HIGH Time

tKH

Clock LOW Time

tKL

1.7

1.5

—

1.7

1.5

—

1.7

1.5

—

ns

Clock to Output in

High-Z

tHZ¹

2.5

3.0

G to Output Valid

G to output in Low-Z

G to output in High-Z

ZZ setup time

tOE

—

0

2.5

—

2.5

—

0

3.0

—

3.0

—

0

3.8

—

3.8

—

ns

tOLZ¹

tOHZ¹

tZZS²

tZZH²

tZZR

—

5

—

5

—

5

ZZ hold time

1

ZZ recovery

20

Notes:

1. These parameters are sampled and are not 100% tested.

2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold

times as specified above.

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Pipeline Mode Timing (DCD)

Begin

Read A Cont

Deselect Deselect Write B Read C Read C+1 Read C+2 Read C+3 Cont

tKL

Deselect Deselect

tKH

tKC

CK

ADSP

tS

ADSC initiated read

tH

ADSC

ADV

tS

tH

A

B

C

Ao–An

GW

tS

tH

BW

tS

Ba–Bd

E1

tS

Deselected with E1

tH

E2 and E3 only sampled with ADSC

tH

E2

E3

G

tS

D(B)

tKQ

tHZ

tOE

tOHZ

Q(A)

tH

tLZ

tKQX

Hi-Z

Q(C)

Q(C+1)

Q(C+2)

Q(C+3)

DQa–DQd

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Flow Through Mode Timing (DCD)

Begin

Read A Cont

tKH

Deselect Write B

tKC

Read C Read C+1 Read C+2 Read C+3 Read C Deselect

tKL

CK

Fixed High

ADSP

tS

tH

tS

tH

ADSC initiated read

ADSC

ADV

Ao–An

GW

tH

tS

tH

tS

tH

A

B

C

tS

tH

tS

tH

BW

tH

tS

Ba–Bd

E1

tS

Deselected with E1

tH

E1 masks ADSP

tS

tH

E2 and E3 only sampled with ADSP and ADSC

E1 masks ADSP

E2

tS

tH

E3

G

tH

tS

tOE

tKQ

tKQX

tHZ

tOHZ

D(B)

tLZ

Q(A)

Q(C)

Q(C+1)

Q(C+2)

Q(C+3)

Q(C)

DQa–DQd

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Sleep Mode

During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high,

the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to

low, the SRAM operates normally after ZZ recovery time.

Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to I 2. The duration of

SB

Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become

disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode.

When the ZZ pin is driven high, I 2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending

SB

operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated

until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands

may be applied while the SRAM is recovering from Sleep mode.

Sleep Mode Timing

tKH

tKC

tKL

CK

Setup

Hold

ADSP

ADSC

tZZR

tZZS

tZZH

ZZ

Application Tips

Single and Dual Cycle Deselect

SCD devices force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with the output

drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there

will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs (like this one) do not waste

bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at

bank address boundary crossings) but greater care must be exercised to avoid excessive bus contention.

JTAG Port Operation

Overview

The JTAG Port on this RAM operates in a manner that is compliant with IEEE Standard 1149.1-1990, a serial boundary scan

interface standard (commonly referred to as JTAG). The JTAG Port input interface levels scale with V . The JTAG output

DD

drivers are powered by V

.

DDQ

Disabling the JTAG Port

It is possible to use this device without utilizing the JTAG port. The port is reset at power-up and will remain inactive unless

clocked. TCK, TDI, and TMS are designed with internal pull-up circuits.To assure normal operation of the RAM with the JTAG

Port unused, TCK, TDI, and TMS may be left floating or tied to either V or V . TDO should be left unconnected.

DD

SS

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

JTAG Pin Descriptions

Pin Name

I/O

Description

Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate

from the falling edge of TCK.

TCK

Test Clock

In

The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP

TMS

TDI

Test Mode Select

Test Data In

In controller state machine. An undriven TMS input will produce the same result as a logic one input

level.

The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers

placed between TDI and TDO. The register placed between TDI and TDO is determined by the

In state of the TAP Controller state machine and the instruction that is currently loaded in the TAP

Instruction Register (refer to the TAP Controller State Diagram). An undriven TDI pin will produce

the same result as a logic one input level.

Output that is active depending on the state of the TAP state machine. Output changes in

Out response to the falling edge of TCK. This is the output side of the serial registers placed between

TDI and TDO.

TDO

Test Data Out

Note:

This device does not have a TRST (TAP Reset) pin. TRST is optional in IEEE 1149.1. The Test-Logic-Reset state is entered while TMS is

held high for five rising edges of TCK. The TAP Controller is also reset automaticly at power-up.

JTAG Port Registers

Overview

The various JTAG registers, refered to as Test Access Port orTAP Registers, are selected (one at a time) via the sequences of 1s

and 0s applied to TMS as TCK is strobed. Each of the TAP Registers is a serial shift register that captures serial input data on the

rising edge of TCK and pushes serial data out on the next falling edge of TCK. When a register is selected, it is placed between the

TDI and TDO pins.

Instruction Register

The Instruction Register holds the instructions that are executed by the TAP controller when it is moved into the Run, Test/Idle, or

the various data register states. Instructions are 3 bits long. The Instruction Register can be loaded when it is placed between the

TDI and TDO pins. The Instruction Register is automatically preloaded with the IDCODE instruction at power-up or whenever the

controller is placed in Test-Logic-Reset state.

Bypass Register

The Bypass Register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through

the RAM’s JTAG Port to another device in the scan chain with as little delay as possible.

Boundary Scan Register

The Boundary Scan Register is a collection of flip flops that can be preset by the logic level found on the RAM’s input or I/O pins.

The flip flops are then daisy chained together so the levels found can be shifted serially out of the JTAG Port’s TDO pin. The

Boundary Scan Register also includes a number of place holder flip flops (always set to a logic 1). The relationship between the

device pins and the bits in the Boundary Scan Register is described in the Scan Order Table following. The Boundary Scan

Register, under the control of the TAP Controller, is loaded with the contents of the RAMs I/O ring when the controller is in

Capture-DR state and then is placed between the TDI and TDO pins when the controller is moved to Shift-DR state. SAMPLE-Z,

SAMPLE/PRELOAD and EXTEST instructions can be used to activate the Boundary Scan Register.

Rev: 1.01a 6/2006

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

JTAG TAP Block Diagram

·

Boundary Scan Register

·

0

Bypass Register

2

1 0

Instruction Register

TDI

TDO

ID Code Register

31 30 29

2 1

0

·

· · ·

Control Signals

Test Access Port (TAP) Controller

TMS

TCK

Identification (ID) Register

The ID Register is a 32-bit register that is loaded with a device and vendor specific 32-bit code when the controller is put in

Capture-DR state with the IDCODE command loaded in the Instruction Register. The code is loaded from a 32-bit on-chip ROM.

It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the

controller is moved into Shift-DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins.

ID Register Contents

GSI Technology

Not Used

JEDEC Vendor

ID Code

Bit # 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1

0 1 1 0 1 1 0 0 1

0

1

X

0

Rev: 1.01a 6/2006

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Tap Controller Instruction Set

Overview

There are two classes of instructions defined in the Standard 1149.1-1990; the standard (Public) instructions, and device specific

(Private) instructions. Some Public instructions are mandatory for 1149.1 compliance. Optional Public instructions must be

implemented in prescribed ways. The TAP on this device may be used to monitor all input and I/O pads, and can be used to load

address, data or control signals into the RAM or to preload the I/O buffers.

When the TAP controller is placed in Capture-IR state the two least significant bits of the instruction register are loaded with 01.

When the controller is moved to the Shift-IR state the Instruction Register is placed between TDI and TDO. In this state the desired

instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the

TAP executes newly loaded instructions only when the controller is moved to Update-IR state. The TAP instruction set for this

device is listed in the following table.

JTAG Tap Controller State Diagram

Test Logic Reset

1

0

1

Run Test Idle

Select DR

Select IR

0

1

Capture DR

Capture IR

0

Shift DR

Shift IR

0

1

Exit1 DR

Exit1 IR

0

Pause DR

Pause IR

0

1

Exit2 DR

Exit2 IR

1

Update DR

Update IR

1

0

1

0

Instruction Descriptions

BYPASS

When the BYPASS instruction is loaded in the Instruction Register the Bypass Register is placed between TDI and TDO. This

occurs when the TAP controller is moved to the Shift-DR state. This allows the board level scan path to be shortened to facili-

tate testing of other devices in the scan path.

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

SAMPLE/PRELOAD

SAMPLE/PRELOAD is a Standard 1149.1 mandatory public instruction. When the SAMPLE / PRELOAD instruction is

loaded in the Instruction Register, moving the TAP controller into the Capture-DR state loads the data in the RAMs input and

I/O buffers into the Boundary Scan Register. Boundary Scan Register locations are not associated with an input or I/O pin, and

are loaded with the default state identified in the Boundary Scan Chain table at the end of this section of the datasheet. Because

the RAM clock is independent from the TAP Clock (TCK) it is possible for the TAP to attempt to capture the I/O ring contents

while the input buffers are in transition (i.e. in a metastable state). Although allowing the TAP to sample metastable inputs will

not harm the device, repeatable results cannot be expected. RAM input signals must be stabilized for long enough to meet the

TAPs input data capture set-up plus hold time (tTS plus tTH). The RAMs clock inputs need not be paused for any other TAP

operation except capturing the I/O ring contents into the Boundary Scan Register. Moving the controller to Shift-DR state then

places the boundary scan register between the TDI and TDO pins.

EXTEST

EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register is loaded with

all logic 0s. The EXTEST command does not block or override the RAM’s input pins; therefore, the RAM’s internal state is

still determined by its input pins.

Typically, the Boundary Scan Register is loaded with the desired pattern of data with the SAMPLE/PRELOAD command.

Then the EXTEST command is used to output the Boundary Scan Register’s contents, in parallel, on the RAM’s data output

drivers on the falling edge of TCK when the controller is in the Update-IR state.

Alternately, the Boundary Scan Register may be loaded in parallel using the EXTEST command. When the EXTEST instruc-

tion is selected, the sate of all the RAM’s input and I/O pins, as well as the default values at Scan Register locations not asso-

ciated with a pin, are transferred in parallel into the Boundary Scan Register on the rising edge of TCK in the Capture-DR

state, the RAM’s output pins drive out the value of the Boundary Scan Register location with which each output pin is associ-

ated.

IDCODE

The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in Capture-DR mode and

places the ID register between the TDI and TDO pins in Shift-DR mode. The IDCODE instruction is the default instruction

loaded in at power up and any time the controller is placed in the Test-Logic-Reset state.

SAMPLE-Z

If the SAMPLE-Z instruction is loaded in the instruction register, all RAM outputs are forced to an inactive drive state (high-

Z) and the Boundary Scan Register is connected between TDI and TDO when the TAP controller is moved to the Shift-DR

state.

RFU

These instructions are Reserved for Future Use. In this device they replicate the BYPASS instruction.

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

JTAG TAP Instruction Set Summary

Instruction

EXTEST

Code

000

Description

Notes

1

Places the Boundary Scan Register between TDI and TDO.

Preloads ID Register and places it between TDI and TDO.

IDCODE

001

1, 2

Captures I/O ring contents. Places the Boundary Scan Register between TDI and

SAMPLE-Z

010

011

TDO.

1

Forces all RAM output drivers to High-Z.

Do not use this instruction; Reserved for Future Use.

Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.

RFU

SAMPLE/

PRELOAD

Captures I/O ring contents. Places the Boundary Scan Register between TDI and

TDO.

100

101

110

111

1

GSI

GSI private instruction.

Do not use this instruction; Reserved for Future Use.

Replicates BYPASS instruction. Places Bypass Register between TDI and TDO.

RFU

BYPASS

Places Bypass Register between TDI and TDO.

Notes:

1. Instruction codes expressed in binary, MSB on left, LSB on right.

2. Default instruction automatically loaded at power-up and in test-logic-reset state.

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

JTAG Port Recommended Operating Conditions and DC Characteristics (1.8/2.5 V Version)

Parameter

Symbol

Min.

–0.3

Max.

Unit Notes

V

0.3 * V

1.8 V Test Port Input Low Voltage

2.5 V Test Port Input Low Voltage

1.8 V Test Port Input High Voltage

2.5 V Test Port Input High Voltage

TMS, TCK and TDI Input Leakage Current

TDO Output Leakage Current

V

1

ILJ1

DD1

V

0.3 * V

DD2

–0.3

ILJ2

V

0.6 * V

V

+0.3

V

1

IHJ1

DD1

DD2

V

0.6 * V

DD2

V

1

IHJ2

I

–300

–1

1

uA

V

2

INHJ

I

100

1

3

INLJ

I

–1

4

OLJ

V

Test Port Output High Voltage

1.7

—

0.4

—

5, 6

5, 7

5, 8

5, 9

OHJ

V

Test Port Output Low Voltage

—

V

OLJ

V

– 100 mV

DDQ

Test Port Output CMOS High

V

OHJC

V

Test Port Output CMOS Low

—

100 mV

V

OLJC

Notes:

1. Input Under/overshoot voltage must be –2 V < Vi < V

+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.

DDn

2.

V

≤ V ≤ V

ILJ

IN

DDn

3. 0 V ≤ V ≤ V

IN

ILJn

4. Output Disable, V

= 0 to V

DDn

OUT

5. The TDO output driver is served by the V

supply.

DDQ

6.

7.

8.

9.

I

= –4 mA

OHJ

= + 4 mA

OLJ

= –100 uA

= +100 uA

OHJC

OLJC

JTAG Port AC Test Conditions

Parameter

Conditions

JTAG Port AC Test Load

V

– 0.2 V

Input high level

Input low level

DQ

DD

0.2 V

1 V/ns

*

50Ω

Input slew rate

30pF

V

/2

Input reference level

DDQ

V

/2

DDQ

/2

Output reference level

DDQ

* Distributed Test Jig Capacitance

Notes:

1. Include scope and jig capacitance.

2. Test conditions as shown unless otherwise noted.

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

JTAG Port Timing Diagram

tTKC

tTKH

tTKL

TCK

TDI

tTH

tTS

TMS

TDO

tTKQ

tTH

tTS

Parallel SRAM input

JTAG Port AC Electrical Characteristics

Parameter

Symbol

tTKC

tTKQ

tTKH

tTKL

tTS

Min

Max

—

Unit

TCK Cycle Time

50

—

ns

TCK Low to TDO Valid

TCK High Pulse Width

TCK Low Pulse Width

TDI & TMS Set Up Time

TDI & TMS Hold Time

20

—

20

10

—

tTH

—

Boundary Scan (BSDL Files)

For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications

Engineering Department at: apps@gsitechnology.com.

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Package Dimensions—165-Bump FPBGA (Package D)

A1 CORNER

TOP VIEW

BOTTOM VIEW

A1 CORNER

M

Ø0.10

C

Ø0.25 C A B

Ø0.40~0.60 (165x)

1

2 3 4 5 6 7 8 9 10 11

11 10 9 8

7 6 5 4 3 2 1

A

B

C

D

E

F

A

B

C

D

E

F

G

H

J

G

H

J

K

L

K

L

M

N

P

R

M

N

P

R

A

1.0

10.0

1.0

13±0.05

B

0.20(4x)

SEATING PLANE

C

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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

TQFP Package Drawing (Package T)

θ

L

c

L1

Symbol

Description

Standoff

Min. Nom. Max

A1

A2

b

0.05

1.35

0.20

0.09

0.10

1.40

0.30

—

0.15

1.45

0.40

0.20

22.1

20.1

16.1

14.1

—

Body Thickness

Lead Width

c

Lead Thickness

D

Terminal Dimension 21.9

Package Body 19.9

Terminal Dimension 15.9

22.0

20.0

16.0

14.0

0.65

0.60

1.00

e

D1

E

b

E1

e

Package Body

Lead Pitch

13.9

—

L

Foot Length

Lead Length

Coplanarity

Lead Angle

0.45

—

0.75

—

L1

Y

A1

A2

E1

E

0.10

7°

θ

0°

—

Notes:

1. All dimensions are in millimeters (mm).

2. Package width and length do not include mold protrusion.

Rev: 1.01a 6/2006

31/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Ordering Information for GSI Synchronous Burst RAMs

2

Voltage

Option

Speed

3

1

4

Org

Type

Package

T

Part Number

Status

A

(MHz/ns)

1M x 18

GS8161E18BT-250V

GS8161E18BT-200V

GS8161E18BT-150V

GS8161E36BT-250V

GS8161E36BT-200V

GS8161E36BT-150V

GS8161E18BT-250IV

GS8161E18BT-200IV

GS8161E18BT-150IV

GS8161E36BT-250IV

GS8161E36BT-200IV

GS8161E36BT-150IV

GS8161E18BD-250V

GS8161E18BD-200V

GS8161E18BD-150V

GS8161E32BD-250V

GS8161E32BD-200V

GS8161E32BD-150V

GS8161E36BD-250V

GS8161E36BD-200V

GS8161E36BD-150V

GS8161E18BD-250IV

GS8161E18BD-200IV

GS8161E18BD-150IV

GS8161E32BD-250IV

GS8161E32BD-200IV

GS8161E32BD-150IV

GS8161E36BD-250IV

GS8161E36BD-200IV

GS8161E36BD-150IV

DCD

1.8 V or 2.5 V

TQFP

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

C

I

MP

1M x 18

TQFP

512K x 36

1M x 18

TQFP

1M x 18

TQFP

I

1M x 18

TQFP

I

512K x 36

1M x 18

TQFP

I

TQFP

I

TQFP

I

165 BGA

C

I

1M x 18

512K x 32

512K x 36

1M x 18

I

1M x 18

I

512K x 32

512K x 36

I

512K x 36

I

Notes:

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8161E18BT-150IVT.

2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each

device is Pipeline/Flow Through mode-selectable by the user.

3. T = C = Commercial Temperature Range. T = I = Industrial Temperature Range.

A

4. MP = Mass Production. PQ = Pre-Qualification.

5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are

covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.

Rev: 1.01a 6/2006

32/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Ordering Information for GSI Synchronous Burst RAMs (Continued)

2

Voltage

Option

Speed

3

1

4

Org

Type

Package

T

Part Number

Status

A

(MHz/ns)

1M x 18

GS8161E18BGT-250V

GS8161E18BGT-200V

GS8161E18BGT-150V

DCD

1.8 V or 2.5 V

RoHS-compliant TQFP

RoHS-compliant 165 BGA

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

250/5.5

200/6.5

150/7.5

C

I

PQ

512K x 36 GS8161E36BGT-250V

512K x 36 GS8161E36BGT-200V

512K x 36 GS8161E36BGT-150V

1M x 18

GS8161E18BGT-250IV

GS8161E18BGT-200IV

GS8161E18BGT-150IV

I

512K x 36 GS8161E36BGT-250IV

512K x 36 GS8161E36BGT-200IV

512K x 36 GS8161E36BGT-150IV

I

1M x 18

GS8161E18BGD-250V

GS8161E18BGD-200V

GS8161E18BGD-150V

C

I

512K x 32 GS8161E32BGD-250V

512K x 32 GS8161E32BGD-200V

512K x 32 GS8161E32BGD-150V

512K x 36 GS8161E36BGD-250V

512K x 36 GS8161E36BGD-200V

512K x 36 GS8161E36BGD-150V

1M x 18

GS8161E18BGD-250IV

GS8161E18BGD-200IV

GS8161E18BGD-150IV

I

512K x 32 GS8161E32BGD-250IV

512K x 32 GS8161E32BGD-200IV

512K x 32 GS8161E32BGD-150IV

512K x 36 GS8161E36BGD-250IV

512K x 36 GS8161E36BGD-200IV

I

512K x 36 GS8161E36BGD-150IV

I

Notes:

1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8161E18BT-150IVT.

2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each

device is Pipeline/Flow Through mode-selectable by the user.

3. T = C = Commercial Temperature Range. T = I = Industrial Temperature Range.

A

4. MP = Mass Production. PQ = Pre-Qualification.

5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are

covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.

Rev: 1.01a 6/2006

33/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

Rev: 1.01a 6/2006

34/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Preliminary

GS8161ExxB(T/D)-xxxV

18Mb Sync SRAM Datasheet Revision History

Types of Changes

Format or Content

DS/DateRev. Code: Old;

Page;Revisions;Reason

New

• Creation of new datasheet

8161EVxxB_r1

• Added RoHS-compliant information for 165 BGA

• Changed part numbering due to nomenclature change

• (Rev1.01a: Corrected JTAG Op Cond table)

8161EVxxB_r1;

8161Exx-xxxV_r1_01

Content

Rev: 1.01a 6/2006

35/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.


型号：	GS8161E18BT-150V
厂家：	GSI TECHNOLOGY
描述：	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M ×18 ， 512K ×36 ， 512K ×36 18MB同步突发静态存储器存储内存集成电路静态存储器
文件：	总35页 (文件大小：1504K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GS8161E18BT-150V [GSI]

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