G2N3904 [GTM]

NPN EPITAXIAL PLANAR TRANSISTOR; NPN外延平面晶体管


型号：	G2N3904
厂家：	GTM CORPORATION
描述：	NPN EPITAXIAL PLANAR TRANSISTOR NPN外延平面晶体管晶体晶体管局域网
文件：	总2页 (文件大小：129K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ISSUED DATE :2003/12/12

REVISED DATE :2005/06/24C

GTM

CORPORATION

G2N3904

The G2N3904 is designed for general purpose switching and amplifier applications.

N P N E P I TA X I A L P L A N A R T R A N S I S TO R

Description

Features

*Pb-free package are available

*Collector-Emitter Voltage: VCEO=40V

*Collect Dissipation: Pc (max) =625mW

*Complementary to G2N3906

Package Dimensions

TO-92

S 1

S E A T IN G

P L A N E

Millimeter

REF.

Millimeter

REF.

Min.

4.45

1.02

0.36

Max.

4.7

Min.

4.44

3.30

12.70

1.150

2.42

Max.

4.7

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)

Parameter

Collector to Base Voltage

Symbol

Ratings

Unit

CBO

CEO

Collector to Emitter Voltage

Emitter to Base Voltage

Collect Current(DC)

EBO

200

Junction Temperature

TsTG

+150

-55 ~ +150

625

Storage Temperature Range

Total Power Dissipation

Electrical Characteristics(Ta = 25к,unless otherwise specified)

Symbol

BVCBO

Min.

Typ.

Max.

Unit

Test Conditions

IC=10uA , IE=0

BVCEO

BVEBO

ICEX

IC=1mA , IB=0

IE=10uA, IC=0

VCE=30V, VEB=3V

VEB=3V

IC=10mA, IB=1mA

IC=50mA, IB=5mA

IC=10mA, IB=1mA

IC=50mA, IB=5mA

VCE=1V, IC=0.1mA

VCE=1V, IC=1mA

VCE=1V, IC=10mA

VCE=1V, IC=50mA

VCE=1V, IC=100mA

200

300

850

950

IEBO

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

650

hFE

100

300

MHz

VCE=20V, IE=-10mA, f=100MHz

VCB=10V, f=100KHz

Cob

Cib

VEB=0.5V, f=100KHz

200

VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA

VCC=3V, IC=10mA, IB1=-IB2=1mA

tstg

VCC=3V, IC=10mA, IB1=-IB2=1mA

G2N3904

Page: 1/2

ISSUED DATE :2003/12/12

REVISED DATE :2005/06/24C

GTM

CORPORATION

Characteristics Curve

Important Notice:

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.

GTM reserves the right to make changes to its products without notice.

GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.

TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785

China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China

TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165

G2N3904

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