G3018 [GTM]

N-CHANNEL MOSFET; N沟道MOSFET


型号：	G3018
厂家：	GTM CORPORATION
描述：	N-CHANNEL MOSFET N沟道MOSFET
文件：	总4页 (文件大小：338K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Pb Free Plating Product

ISSUED DATE :2005/11/30

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

30V

8ꢀ

G3018

N - C H A N N E L M O S F E T

115mA

Description

N-channel enhancement-mode MOSFET

Features

ԦLow on-resistance.

ԦFast switching speed.

ԦLow voltage drive (2.5V) makes this device ideal for portable equipment.

ԦEasily designed drive circuits.

ԦEasy to parallel.

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min.

1.90 REF.

1.00

0.10

0.40

0.85

0°

REF.

Min.

2.70

2.40

1.40

0.35

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Max.

1.30

0.20

1.15

10°

0.45

Absolute Maximum Ratings

Parameter

Drain-Source Voltage

Symbol

V_DS

Ratings

Unit

Gate-Source Voltage

V_GS

f20

115

Continuous Drain Current³

Pulsed Drain Current^1,2

Power Dissipation

I_D@T

I_DM

A=25к

A=100к

800

P_D@T

A=25к

0.225

0.0018

Linear Derating Factor

Operating Junction and Storage Temperature Range

W/ć

Tj, Tstg

-40 ~ +150

Thermal Data

Parameter

Symbol

Rthj-a

Ratings

Unit

ć/W

Thermal Resistance Junction-ambient³Max.

556

G3018

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ISSUED DATE :2005/11/30

REVISED DATE :

GTM

CORPORATION

Electrical Characteristics(Tj = 25ć Unless otherwise specified)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

Gate Threshold Voltage

BV_DSS

V_GS(th)

g_fs

V_GS=0, I_D=250uA

0.8

2.0

V_DS=V_GS, I_D=0.1mA

V_DS=3V, I_D=10mA

V_GS= ±20V

Forward Transconductance

Gate-Source Leakage Current

Drain-Source Leakage Current

±1

I_GSS

I_DSS

V_DS=30V, V_GS=0

V_GS=4V, I_D=10mA

V_GS=2.5V, I_D=1mA

Static Drain-Source On-Resistance

ꢀ

R_DS(ON)

Input Capacitance

C_iss

C_oss

C_rss

V_GS=0V

V_DS=5V

f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage²

0.84

1.5

V_SD

I_S=100mA, V_GS=0V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse widthЉ300us, duty cycleЉ2%.

3. Surface mounted on 1 in²copper pad of FR4 board; 270к/W when mounted on Min. copper pad.

G3018

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ISSUED DATE :2005/11/30

REVISED DATE :

GTM

CORPORATION

Characteristics Curve

G3018

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ISSUED DATE :2005/11/30

REVISED DATE :

GTM

CORPORATION

Important Notice:

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.

GTM reserves the right to make changes to its products without notice.

GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.

TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785

China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China

TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165

G3018

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