GDBAS16 [GTM]
SURFACE MOUNT,SWITCHING DIODE; 表面贴装，开关二极管
| 型号： | GDBAS16 |
| 厂家： | 
GTM CORPORATION |
| 描述： | SURFACE MOUNT,SWITCHING DIODE |
| 文件： | 总2页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISSUED DATE :2006/12/12
REVISED DATE :
GTM
CORPORATION
GDBAS16
S U R F A C E M O U N T, S W I T C H I N G D I O D E
V O LT AG E 8 5 V, C U R R E N T 2 5 0 m A
Description
The GDBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount
package.
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
1.05
0.10
1.00
1.45
1.80
2.70
Min.
Max.
A
A1
A2
D
E
HE
0.85
0
L
b
c
0.20
0.25
0.10
0.40
0.40
0.18
0.80
1.15
1.60
2.30
Q1
0.15 BSC.
Absolute Maximum Ratings at T
Parameter
A = 25к
Symbol
Tj
Ratings
+150
-65 ~ +150
85
Unit
к
Junction Temperature
Storage Temperature
Tstg
к
Reverse Voltage
VR
V
Repetitive Reverse Voltage
Forward Current
V
RRM
85
V
IO
250
mA
mA
mA
mW
Repetitive Forward Current
Forward Surge Current (1ms)
Total Power Dissipation
I
FM
500
IFSM
1000
225
P
D
Electrical Characteristics (at T
A
= 25к unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR
)
85
-
-
V
I
I
I
I
I
R
=100uA
VF
VF
VF
VF
(1)
715
855
1000
1250
1
mV
mV
mV
mV
uA
F
F
F
F
=1mA
(2)
(3)
(4)
-
=10mA
=50mA
=150mA
Forward Voltage
-
-
Reverse Current
IR
-
V
R
=85V
Total Capacitance
Reverse Recovery Time
C
T
2
pF
V
R
=0, f=1MHz
Trr
-
6
nS
IF=IR=10mA, RL=100ꢀ measured at IR=1mA
GDBAS16
Page: 1/2
ISSUED DATE :2006/12/12
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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GDBAS16
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