GU80N03 [GTM]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET


型号：	GU80N03
厂家：	GTM CORPORATION
描述：	N-CHANNEL ENHANCEMENT MODE POWER MOSFET N沟道增强型功率MOSFET
文件：	总5页 (文件大小：331K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Pb Free Plating Product

ISSUED DATE :2005/06/24

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

30V

8mΩ

80A

GU80N03

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GU80N03 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Repetitive Avalanche Rated

*Low On-Resistance

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.30

0.5

Min.

Max.

1.45

1.47

9.0

4.40

0.76

0.00

0.36

1.25

1.17

8.6

2.54 REF.

1.50 REF.

ꢀ

14.6

0˚

1.27 REF.

15.8

8˚

2.29

9.80

2.79

10.4

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

f20

I_D@T

I_DM

P_D@T =25к

=25к

Continuous Drain Current , V_GS@10V

Pulsed Drain Current¹

=100к

315

Total Power Dissipation

83.3

Linear Derating Factor

0.67

W/ć

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

1.5

Unit

ć/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

GU80N03

Page: 1/5

ISSUED DATE :2005/06/24

REVISED DATE :

GTM

CORPORATION

Electrical Characteristics(Tj = 25ć Unless otherwise specified)

Parameter

Symbol Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Gate Threshold Voltage

BV_DSS

V_GS(th)

g_fs

V_GS=0, I_D=250uA

BV_DSS

/Ϧ

V/к

1.0

0.035

Reference to 25к, I_D=1mA

V_DS=V_GS, I_D=250uA

V_DS=10V, I_D=40A

V_GS= ̈́20V

3.0

Forward Transconductance

̈́100

Gate-Source Leakage Current

Drain-Source Leakage Current(Tj=25к)

I_GSS

V_DS=30V, V_GS=0

V_DS=24V, V_GS=0

V_GS=10V, I_D=40A

V_GS=4.5V, I_D=32A

I_DSS

Drain-Source Leakage Current(Tj=150к)

mӨ

Static Drain-Source On-Resistance

R_DS(ON)

Total Gate Charge²

Gate-Source Charge

Gate-Drain (“Miller”) Change

Turn-on Delay Time²

Rise Time

5.2

9.9

100

1950

895

315

Q_g

Q_gs

Q_gd

T_d(on)

T_r

I_D=40A

V_DS=24V

V_GS=5V

_DS=15V

I_D=40A

_GS=10V

Turn-off Delay Time

Fall Time

T_d(off)

T_f

R_G=3.3Ө

R_D=0.37Ө

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C_iss

C_oss

C_rss

V_GS=0V

V_DS=25V

f=1.0MHz

Source-Drain Diode

Parameter

Forward On Voltage²

Symbol Min.

Typ.

Max.

1.3

Unit

Test Conditions

V_SD

I_S=80A, V_GS=0V, Tj=25к

Continuous Source Current (Body Diode

)

I_S

V_D= V_G=0V, V_S=1.3V

Pulsed Source Current (Body Diode

)

315

I_SM

Notes: 1. Pulse width limited by safe operating area.

2. Pulse widthЉ300us, duty cycleЉ2%.

GU80N03

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ISSUED DATE :2005/06/24

REVISED DATE :

GTM

CORPORATION

Characteristics Curve

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 6. Type Power Dissipation

Fig 5. Maximum Drain Current

v.s. Case Temperature

GU80N03

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ISSUED DATE :2005/06/24

REVISED DATE :

GTM

CORPORATION

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

Fig 10. Typical Capacitance Characteristics

Fig 9. Gate Charge Characteristics

Fig 11. Forward Characteristics of

Reverse Diode

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

GU80N03

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ISSUED DATE :2005/06/24

REVISED DATE :

GTM

CORPORATION

Fig 13. Switching Time Circuit

Fig 14. Switching Time Waveform

Fig 15. Gate Charge Circuit

Fig 16. Gate Charge Waveform

Important Notice:

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.

GTM reserves the right to make changes to its products without notice.

GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

Head Office And Factory:

Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.

TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785

China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China

TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165

GU80N03

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