GU85T03 [GTM]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | GU85T03 |
| 厂家： | 
GTM CORPORATION |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：275K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Pb Free Plating Product
ISSUED DATE :2005/11/24
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
30V
6mꢁ
75A
GU85T03
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GU85T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant
Package Dimensions
Millimeter
Millimeter
REF.
REF.
Min.
Max.
4.80
1.00
0.30
0.5
Min.
Max.
1.45
1.47
9.0
A
b
L4
c
4.40
0.76
0.00
0.36
c2
b2
D
1.25
1.17
8.6
e
2.54 REF.
L3
L1
E
1.50 REF.
L
ꢀ
L2
14.6
0˚
1.27 REF.
15.8
8˚
2.29
9.80
2.79
10.4
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@4.5V
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
75
A
C
=100к
55
A
350
A
Total Power Dissipation
C
107
W
Linear Derating Factor
0.7
W/к
к
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +175
Thermal Data
Parameter
Symbol
Rthj-c
Value
1.4
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Rthj-a
62
GU85T03
Page: 1/4
ISSUED DATE :2005/11/24
REVISED DATE :
GTM
CORPORATION
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
30
-
0.018
-
-
V
BVDSS
Tj
VGS=0, ID=250uA
Ϧ
BVDSS
/Ϧ
-
1.0
-
-
V/к
V
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VGS= ±20V
3.0
VGS(th)
gfs
Forward Transconductance
32
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±100
nA
uA
uA
IGSS
-
-
1
VDS=30V, VGS=0
VDS=24V, VGS=0
VGS=10V, ID=45A
VGS=4.5V, ID=30A
IDSS
Drain-Source Leakage Current(Tj=175к)
-
-
500
-
-
6
10
52
-
Static Drain-Source On-Resistance2
mꢁ
RDS(ON)
-
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
33
7.5
24
11.2
77
35
67
Qg
Qgs
Qgd
Td(on)
Tr
ID=30A
nC
-
VDS=24V
VGS=4.5V
-
-
-
-
V
DS=15V
ID=30A
GS=10V
-
-
ns
V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=3.3ꢁ
RD=0.5ꢁ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
2700 4200
Ciss
Coss
Crss
VGS=0V
pF
-
550
380
-
-
VDS=25V
f=1.0MHz
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
-
Max.
Unit
V
Test Conditions
-
1.3
VSD
IS=45A, VGS=0V
Reverse Recovery Time2
Trr
-
-
28
10
-
-
ns
IS=30A, VGS=0V
dI/dt=100A/ꢂs
Reverse Recovery Charge
Qrr
nC
Notes: 1. Pulse width limited by safe operating area.
2. Pulse widthЉ300us, duty cycleЉ2%.
GU85T03
Page: 2/4
ISSUED DATE :2005/11/24
REVISED DATE :
GTM
CORPORATION
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
GU85T03
Page: 3/4
ISSUED DATE :2005/11/24
REVISED DATE :
GTM
CORPORATION
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
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Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GU85T03
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