BYV26FGP [GULFSEMI]

SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGEï¼ 1200V to 1400V CURRENT: 1.0A; 烧结玻璃结快速开关塑封整流VOLTAGEï¼ ？ 1200V至1400V电流： 1.0A


型号：	BYV26FGP
厂家：	GULF SEMICONDUCTOR
描述：	SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGEï¼ 1200V to 1400V CURRENT: 1.0A 烧结玻璃结快速开关塑封整流VOLTAGEï¼ ？ 1200V至1400V电流： 1.0A 二极管开关
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中文：	中文翻译
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BYV26FGP BYV26GGP

SINTERED GLASS JUNCTION

FAST SWITCHING PLASTIC RECTIFIER

VOLTAGE： 1200V to 1400V

CURRENT: 1.0A

DO-41\DO-204AL

FEATURE

High temperature metallurgic ally bonded construction

Sintered glass cavity free junction

Capability of meeting environmental standard of

MIL-S-19500

High temperature soldering guaranteed

350°C /10sec/0.375”lead length at 5 lbs tension

Operate at Ta =85°C with no thermal run away

Typical Ir<0.1µA

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

BYV26FGP

BYV26GGP

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Vrrm

Vrms

Vdc

1200

840

1400

980

Maximum DC blocking Voltage

1200

1400

Reverse avalanche breakdown voltage

at IR = 0.1 mA

(BR)R (min)

If(av)

1300

1500

Maximum Average Forward Rectified

Current 3/8”lead length at Ta =55°C

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Forward Voltage at rated Forward

Current and 50°C

non-repetitive peak reverse avalanche energy

(Note 1)

Maximum full load reverse current full cycle

average at 65°C Ambient

1.0

Ifsm

2.15

Ersm

Ir(av)

µA

100.0

5.0

150.0

150

µA

Maximum DC Reverse Current

at rated DC blocking voltage

Ta =25°C

Ta =150°C

Maximum Reverse Recovery Time (Note 1)

Trr

Typical Junction Capacitance

Typical Thermal Resistance

(Note 2)

(Note 3)

20.0

R(ja)

Tstg, Tj

55.0

°C /W

°C

Storage and Operating Junction Temperature

-65 to +175

Note: 1.IR=400mA; Tj=Tjmax prior to surge; inductive load switched off

2.Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A

3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted

Rev.A5

www.gulfsemi.com

RATINGS AND CHARACTERISTIC CURVES BYV26GP

¹Rev.A5

www.gulfsemi.com

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