BYV26F [GULFSEMI]

SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE:1200V CURRENT: 1.05A; 烧结玻璃结快速雪崩整流电压: 1200V电流: 1.05A
BYV26F
型号: BYV26F
厂家: GULF SEMICONDUCTOR    GULF SEMICONDUCTOR
描述:

SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE:1200V CURRENT: 1.05A
烧结玻璃结快速雪崩整流电压: 1200V电流: 1.05A

二极管 局域网 快速恢复二极管
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BYV26F  
SINTERED GLASS JUNCTION  
FAST AVALANCHE RECTIFIER  
VOLTAGE1200V  
CURRENT: 1.05A  
SOD-57  
FEATURE  
Glass passivated  
High maximum operating temperature  
Low leakage current  
Excellent stability  
Guaranteed avalanche energy absorption capability  
MECHANICAL DATA  
Case: SOD-57 sintered glass case  
Terminal: Plated axial leads solderable per  
MIL-STD 202E, method 208C  
Polarity: color band denotes cathode end  
Mounting position: any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)  
SYMBOL  
BYV26F  
units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
1200  
910  
V
V
V
Maximum DC blocking Voltage  
1200  
Reverse avalanche breakdown voltage  
V(BR)R  
IFAV  
1300min  
1.05  
V
A
IR = 0.1 mA  
Maximum Average Forward Rectified  
Current 3/8”lead length at Ttp =85°C  
Non-repetitive Peak Forward Current at t=10ms half  
sine wave  
IFSM  
VF  
30  
2.15  
10  
A
V
Maximum Forward Voltage at 1.0A  
Non-repetitive peak reverse avalanche energy  
(Note 1)  
ERSM  
mJ  
5.0  
150.0  
150  
µA  
µA  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25°C  
Ta =165°C  
IR  
Maximum Reverse Recovery Time  
Diode Capacitance  
(Note 2)  
(Note 3)  
(Note 4)  
Trr  
Cd  
nS  
pF  
35  
Typical Thermal Resistance  
Rth(ja)  
Tstg, Tj  
100  
K/W  
°C  
Storage and Operating Junction Temperature  
Note:  
-65 to +175  
1. IR=400mA; Tj=Tjmax prior to surge; inductive load switched off  
2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A  
3. Measured at 1.0 MHz and applied reverse voltage of 0Vdc  
4. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick  
Rev.A1  
www.gulfsemi.com  
RATINGS AND CHARACTERISTIC CURVES BYV26F  
Rev.A1  
www.gulfsemi.com  

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