BZX55C4V3 [GXELECTRONICS]
Silicon Planar Zener Diodes; 硅平面齐纳二极管
| 型号： | BZX55C4V3 |
| 厂家： | 
Gaomi Xinghe Electronics Co., Ltd. |
| 描述： | Silicon Planar Zener Diodes |
| 文件： | 总3页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BZX55C
Silicon Planar Zener Diodes
The Zener voltages are graded according to the
international E24 standard. Other tolerances and
higher Zener voltages are upon request.
Max. 0.5
Min. 27.5
Max. 3.9
Min. 27.5
Max. 1.9
Black
Cathode Band
Black
Part No.
XXX
Glass Case DO-35
Dimensions in mm
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Ptot
Value
500 1)
Unit
mW
Power Dissipation
O
C
Junction Temperature
Tj
175
O
C
Storage Temperature Range
Tstg
- 55 to + 175
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
O
Characteristics at Ta = 25 C
Parameter
Symbol
RthA
Max.
0.3 1)
Unit
Thermal Resistance Junction to Ambient Air
K/mW
Forward Voltage
at IF = 100 mA
VF
1
V
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
BZX55C
Zener Voltage Range 1)
Dynamic Resistance
Reverse Leakage Current
Temp. Coefficient
of Zener Voltage
Type
Vznom
VZT
at IZT
ZZT
ZZK
at IZK Ta =25OC Ta =125OC IR at VR
(V)
0.8
2
(V)
(mA)
5
Max. (Ω) Max. (Ω)
(mA) Max. (µA) Max. (µA)
(V)
-
TKvz (%/K)
-0.26...-0.23
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.09...-0.06
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.08...-0.05
-0.06...-0.03
-0.05...+0.02
-0.02...+0.02
-0.05...+0.05
0.03...0.06
0.03...0.07
0.03...0.07
0.03...0.08
0.03...0.09
0.03...0.1
BZX55C0V8 2)
BZX55C2V0
BZX55C2V2
BZX55C2V4
BZX55C2V7
BZX55C3V0
BZX55C3V3
BZX55C3V6
BZX55C3V9
BZX55C4V3
BZX55C4V7
BZX55C5V1
BZX55C5V6
BZX55C6V2
BZX55C6V8
BZX55C7V5
BZX55C8V2
BZX55C9V1
BZX55C10
BZX55C11
BZX55C12
BZX55C13
BZX55C15
BZX55C16
BZX55C18
BZX55C20
BZX55C22
BZX55C24
BZX55C27
BZX55C30
BZX55C33
BZX55C36
BZX55C39
BZX55C43
BZX55C47
BZX55C51
BZX55C56
BZX55C62
BZX55C68
BZX55C75
0.73...0.83
1.8...2.15
2.08...2.33
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
8
85
85
85
85
85
85
85
85
75
60
35
25
10
8
50
600
600
600
600
600
600
600
600
600
600
550
450
200
150
50
1
1
-
-
200
160
100
50
40
40
40
40
20
10
2
5
100
75
1
2.2
2.4
2.7
3
5
1
1
5
1
50
1
5
1
10
1
5
1
4
1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
5
1
2
1
5
1
2
1
5
1
2
1
5
1
1
1
4.4...5
5
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1
4.8...5.4
5.2...6
5
1
1
5
1
2
1
5.8...6.6
6.4...7.2
7...7.9
5
1
2
2
5
1
2
3
5
7
1
2
5
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
5
7
50
1
2
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
5
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
90
90
110
125
135
150
200
250
50
1
2
5
70
1
2
5
70
1
2
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.03...0.11
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
0.04...0.12
5
90
1
2
5
110
110
170
170
220
220
220
220
220
220
220
500
500
600
700
700
1000
1000
1000
1
2
5
1
2
5
1
2
5
1
2
5
1
2
5
1
2
5
1
2
5
1
2
5
1
2
31...35
5
1
2
34...38
5
1
2
37...41
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
5
40...46
5
44...50
5
48...54
10
10
10
10
10
52...60
58...66
64...72
70...79
1) Tested with pulses tp = 20 ms.
2) The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode
lead to the negative pole.
BZX55C
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