SS512F [GXELECTRONICS]
Surface Mount Schottky Barrier Rectifier;
| 型号： | SS512F |
| 厂家： | 
Gaomi Xinghe Electronics Co., Ltd. |
| 描述： | Surface Mount Schottky Barrier Rectifier 功效 瞄准线 测试 光电二极管 |
| 文件： | 总2页 (文件大小：452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS52F THRU SS520F
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 5.0A
星合 子
XINGHE ELECTRONICS
SMAF
FEATURES
Cathode Band
Top View
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
0.110(2.80)
0.094(2.40)
0.059(1.50)
0.051(1.30)
• Low power loss, high efficiency
• High forward surge current capability
0.150(3.80)
0.128(3.25)
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
0.012(0.30)
0.006(0.15)
0.055(1.40)
0.035(0.90)
0.047(1.20)
0.028(0.70)
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight:27mg 0.00086oz
0.199(5.05)
0.179(4.40)
Dimensions in inches and (millimeters)
Absolute Maximum Ratings and Electrical characteristics
Ratings at 25°Cambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Symbols
SS52F
20
SS54F
40
SS56F
60
SS58F
80
SS510F SS512F SS515F
SS520F
200
Units
V
Parameter
Maximum Repetitive Peak Reverse Voltage
VRRM
VRMS
VDC
100
70
120
84
150
105
150
Maximum RMS voltage
14
28
42
56
140
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
20
40
60
80
100
120
200
V
IF(AV)
5.0
A
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
IFSM
VF
IR
150
A
V
Max Instantaneous Forward Voltage at 5 A
0.45
0.55
0.70
0.85
Maximum DC Reverse Current Ta = 25°C
1.0
50
mA
pF
at Rated DC Reverse Voltage
Typical Junction Capacitance 1）
Typical Thermal Resistance
Ta =100°C
800
500
Cj
RθJA
Tj
2）
55
°C/W
°C
Operating Junction Temperature Range
-55 ~ +125
-55 ~ +150
Storage Temperature Range
Tstg
°C
1）
Measured at 1MHz and applied reverse voltage of 4 V D.C.
P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas.
2）
1
GAOMI XINGHE ELECTRONICS CO.,LTD.
WWW.SDDZG.COM
SS52F THRU SS520F
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 5.0A
星合 子
XINGHE ELECTRONICS
Fig.2 Typical Reverse Characteristics
Fig.1 Forward Current Derating Curve
104
103
7.0
6.0
100LFM
TJ=100°C
TJ=75°C
5.0
4.0
3.0
2.0
1.0
0.0
102
101
100
SS54F/SS520F
Single phase half-wave 60 Hz
resistive or inductive load
TJ=25°C
25
50
75
100
125
150
0
20
40
60
80
100
Ambient Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Fig.4 Typical Junction Capacitance
1000
10
T =25°C
TJJ=25°C
500
200
1.0
100
50
0.1
SS52F
SS54F
SS52F/SS54F
SS56F-SS520F
SS56F/SS58F
SS510F/SS520F
20
10
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instaneous Forward Voltage (V)
0.1
1
10
100
Reverse Voltage (V)
Fig.6- Typical Transient Thermal Impedance
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
200
100
80
8.3 ms Single Half Sine Wave
(JEDEC Method)
100
10
1
60
SS54F~SS520F
40
20
00
1
10
100
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
2
GAOMI XINGHE ELECTRONICS CO.,LTD.
WWW.SDDZG.COM
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